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Fast Recovery Epitaxial Diode (FRED) Module
Preliminary data VRSM V 1200 VRRM V 1200 MEO 450-12DA Type
MEO 450-12 DA
VRRM = 1200 V IFAVM = 453 A trr = 450 ns
3 1
3
1
Symbol IFRMS IFAVM yyx IFRM IFSM
Test Conditions TC = 75C TC = 75C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 640 453 2460 4800 5280 4320 4750 115200 117100 93300 94800 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s C C C W V~ V~
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873
q q q q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg TSmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 300 A; IF = 520 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ TVJ TVJ TVJ = 125C = 25C = 125C = 25C TC = 25C 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Mounting torque (M6) Terminal connection torque (M6) Creeping distance on surface Strike distance through air Maximum allowable acceleration
1750 3000 3600
Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
q q q q q
2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in. 12.7 9.6 50 150 mm mm m/s2 g
Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses
q q q q
Characteristic Values (per diode) typ. max. 24 6 120 1.51 1.78 1.76 1.96 1.16 1.15 0.114 0.071 TVJ = 100C TVJ = 25C TVJ = 100C 450 500 110 165 mA mA mA V V V V V mW K/W K/W ns A A
Dimensions in mm (1 mm = 0.0394")
VF
For power-loss calculations only DC current DC current 600 A IF = 600 V VR= -di/dt = 800 A/ms
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-2
749
MEO 450-12 DA
800 A 700 IF 600 500 400 300 120 C 100 Qr 80 60 40 200 A 180
TVJ= 100C VR = 600V max. IF=600A IF=600A IF=450A IF=225A
TVJ= 100C VR = 600V max. IF=600A IF=600A IF=450A IF=225A
160 IRM 140 120 100 80
typ.
TVJ=125C
200 100 0 0.0
typ.
60 40 20
TVJ=25C
20 0 100
0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
0.5
1.0
1.5 VF
2.0 V 2.5
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF / dt
2000
Fig. 3 Peak reverse current IRM versus -diF / dt
100 A V 90 VFR 70 60 50 40 30 1.0 80
1.4 1.2 Kf 1.0 0.8 0.6 0.4
ns C
trr 1600
TVJ= 100C VR = 600V max. IF=600A IF=600A IF=450A IF=225A
TVJ= 125C IF = 520A VFR tfr
2.5 s 2.0 tfr 1.5
IRM
1200
Qr
800
400 0.2 0.0 0 40 80 120 C 160 TVJ 0 0 200 400
typ.
20 10 0
0.5
600 A/ms 1000 800 -diF/dt
0
400
0.0 800 1200 A/ms -diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
0.14 K/W 0.12 0.10 ZthJS thJH 0.08 0.06 0.04 0.02 0.00 0.001
Fig. 5 Recovery time trr versus -diF / dt
Fig. 6 Peak forward voltage VFR and tfr versus diF / dt Constants for ZthJS calculation: i 1 2 3 4 Rthi (K/W) 0.001 0.004 0.027 0.082 ti (s) 0.08 0.024 0.112 0.464
0.01
0.1
1s
10 t
Fig. 7 Transient thermal impedance junction to case
(c) 2000 IXYS All rights reserved
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