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| MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES * Class A operation * High output power P1dB=38dBm(TYP) * High power gain GLP=11dB(TYP) * High power added efficiency add=45%(TYP) @2.3GHz,P1dB * Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE * IG 10.0 RECOMMENDED BIAS CONDITIONS * VDS=10V * ID=1.3A * Rg=100 * Refer to Bias Procedure 1 GATE 2 SOURCE(FLANGE) GF-21 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:TC=25C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 5 15 31.5 27.3 175 -65 to +175 *1 Unit V V A mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol IDSS gm VGS(off) P1dB GLP add Rth(ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression VDS=3V,VGS=0V VDS=3V,ID=1.3A VDS=3V,ID=10mA Test conditions Min - - -2 37 VDS=10V,ID 1.3A,f=2.3GHz 10 - - Limits Typ - 1.5 - 38 11 45 - Max 5.0 - -5 - - - 5.5 Unit A S V dBm dB % C/W Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 Vf method *1:Channel to case *2:Pin=22dBm Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS ID vs. VGS 6 VDS=3V Ta=25C 6 VGS=-0.5V/Step Ta=25C VGS=0V 4 4 ID vs. VDS 2 2 0 -3 -2 -1 0 0 0 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) PO & add vs. Pin (f=2.3GHz) 40 VDS=10V ID=1.3A Gp=11 10 9 dB 13 12 11 PO 10 39 GLP,P1dB, ID and add vs. VDS (f=2.3GHz) ID=1.3A GLP P1dB 30 37 50 40 30 20 10 0 35 40 20 6 8 10 add 20 add 0 20 30 INPUT POWER Pin(dBm) VDS(V) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET S11 ,S22 vs. f. +j50 +j25 +j100 S21 ,S12 vs. f. +90 3.0GHz +j10 3.0GHz 3.0GHz S11 +j250 S21 0.5GHz S12 0.5GHz 0 S22 25 50 100 250 180 5 4 3 2 1 0 0 I S21 I -j10 -j250 0.1 0.5GHz -j25 -j50 -j100 Ta=25C VDS=10V ID=1.3A 0.2 -90 S PARAMETERS (Ta=25C,VDS=10V,ID=1.3A) Freq. (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 Magn. 0.962 0.961 0.960 0.959 0.958 0.957 0.956 0.955 0.954 0.952 0.950 0.948 0.946 0.944 0.941 0.938 0.934 0.930 0.926 0.922 0.918 0.913 0.907 0.902 0.895 0.885 S11 Angle(deg.) -155.5 -159.7 -163.4 -166.8 -168.4 -171.3 -173.8 -175.4 -176.8 -178.7 -179.7 178.4 177.2 176.0 174.7 174.3 173.3 172.3 171.2 169.9 169.0 167.6 166.1 164.6 163.3 162.0 Magn. 3.762 3.339 2.768 2.460 2.219 2.021 1.830 1.691 1.590 1.500 1.425 1.352 1.330 1.255 1.201 1.040 0.993 0.977 0.949 0.921 0.909 0.900 0.876 0.873 0.843 0.832 S21 Angle(deg.) 97.8 93.6 90.8 87.5 87.1 84.1 82.2 80.2 78.0 75.7 73.7 71.6 69.9 67.7 66.2 65.3 63.3 61.7 59.1 57.0 55.4 54.3 52.2 49.9 48.4 45.5 Magn. 0.0080 0.0090 0.0110 0.0130 0.0140 0.0149 0.0156 0.0172 0.0182 0.0189 0.0192 0.0195 0.0219 0.0224 0.0225 0.0235 0.0239 0.0249 0.0258 0.0265 0.0275 0.0280 0.0286 0.0296 0.0310 0.0320 S12 Angle(deg.) 50.0 49.9 48.5 47.5 46.5 46.0 45.6 44.6 44.0 43.5 42.3 40.9 40.3 39.0 38.5 38.0 37.2 36.5 35.8 35.3 34.6 33.6 32.5 31.2 30.2 29.1 Magn. 0.869 0.869 0.867 0.865 0.860 0.854 0.845 0.840 0.832 0.825 0.818 0.805 0.795 0.782 0.773 0.757 0.750 0.740 0.725 0.708 0.687 0.672 0.662 0.642 0.629 0.610 S22 Angle(deg.) -177.6 -179.6 178.5 178.2 177.6 176.8 175.6 176.6 176.1 175.7 175.3 175.1 174.7 174.0 173.4 174.4 174.2 173.4 172.7 172.2 171.6 170.3 168.9 167.7 166.9 159.4 K 0.752 0.795 0.835 0.842 0.883 0.902 0.943 1.025 1.055 1.085 1.125 1.175 1.195 1.212 1.256 1.285 1.295 1.305 1.355 1.395 1.415 1.435 1.454 1.475 1.495 1.525 MSG/MAG (dB) 25.0 24.8 24.7 23.5 23.0 23.1 22.4 21.5 20.0 19.0 18.5 17.8 17.0 16.9 16.0 15.4 14.8 14.5 14.2 13.8 13.5 12.8 12.3 11.9 10.8 10.5 Nov. 97 MITSUBISHI SEMICONDUCTOR MGF0910A L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC |
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