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| MITSUBISHI SEMICONDUCTOR MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 2MIN (1) 0.6+/-0.15 FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 16W (TYP.) @ f=5.2 - 5.8 GHz High power gain GLP = 10.5 dB (TYP.) @ f=5.2 - 5.8GHz High power added efficiency P.A.E. = 31 % (TYP.) @ f=5.2 - 5.8GHz R1.2 17.4+/-0.3 8.0+/-0.2 (2) 2MIN (3) 20.4+/-0.2 13.4 0.1 1.4 injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. APPLICATION 5.2 - 5.8 GHz band power amplifier QUALITY GRADE IG 4.0+/-0.4 RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 4.5 (A) RG=25 (ohm) GF-18 (1): GATE (2): SOURCE (FLANGE) (3): DRAIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1 (Ta=25deg.C) Ratings -15 -15 15 -40 84 78.9 175 -65 / +175 Unit V V A mA mA W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. Rth(ch-c) (Ta=25deg.C) Test conditions VDS = 3V , VGS = 0V VDS = 3V , ID = 4.4A VDS = 3V , ID = 80mA Min. -2 41.5 VDS=10V, ID(RF off)=4.5A, f=5.2 - 5.8GHz 8 Limits Typ. 9 4 -3 42.5 10.5 4.5 31 Unit Max. 12 -4 1.9 A S V dBm dB A % deg.C/W Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency Thermal resistance *1 delta Vf method - *1 : Channel-case MITSUBISHI ELECTRIC 2.4+/-0.2 June/2004 15.8 MITSUBISHI SEMICONDUCTOR MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
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