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| MITSUBISHI SEMICONDUCTOR MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. 176.+0'&4#9+0) /+0 /+0 7PKVOKNNKOGVGTU KPEJGU r r FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=1.9 - 2.0 GHz High power gain GLP = 13 dB (TYP.) @ f=1.9 - 2.0GHz High power added efficiency P.A.E. = 45 % (TYP.) @ f=1.9 - 2.0GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. r r r r r r /+0 /+0 QUALITY GRADE IG r r RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 6.5 (A) RG=25 (ohm) )#6' 5174%' (.#0)' &4#+0 )( (Ta=25deg.C) Ratings -15 -15 22 -61 76 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CARACTERISTICS Symbol VGS(off) P1dB GLP ID P.A.E. IM3 *2 Rth(ch-c) *3 (Ta=25deg.C) Test conditions VDS = 3V , ID = 60mA Min. 44 VDS=10V, ID(RF off)=6.5A, f=1.9 - 2.0GHz 12 -42 Limits Typ. Max. -5 45 13 7.5 45 -45 1.5 Unit V dBm dB A % dBc deg.C/W Parameter Saturated drain current Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance delta Vf method *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=1.9,2.0GHz,dfelta f=5MHz *3 : Channel-case r item 01 : 1.9 - 2.0 GHz band power amplifier item 51 : 1.9 - 2.0 GHz band digital radio communication MITSUBISHI ELECTRIC r r APPLICATION r r June-'04 MITSUBISHI SEMICONDUCTOR MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. Freq. 46 VDS=10V IDS=6.5A 45 Output power P1dB (dBm) P1dB 45 16 Linear power gain GLP (dB) Output power Po (dBm) 40 17 Po , P.A.E. vs. Pin 50 VDS=10V IDS=6.5A f=1.9GHz Po 50 70 44 GLP 43 15 35 P.A.E. 30 40 14 30 42 13 25 20 41 1.85 1.90 1.95 Frequency (GHz) 2.00 12 2.05 20 10 15 20 25 Input power Pin (dBm) 30 35 10 Po,IM3 vs. Pin 40 VDS=10V IDS=6.5A f1=1.900GHz f2=1.905GHz 0 Output power Po (dBm S.C.L.) 38 -10 Po -20 IM3 (dBc) 36 34 IM3 -30 32 -40 30 -50 28 15 17 19 21 23 25 Input power Pin (dBm S.C.L.) 27 29 -60 S parameters f (GHz) 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 ( Ta=25deg.C , VDS=10(V),IDS=6.5(A) ) S-Parameter (TYP.) S21 S12 Magn. Angle(deg) Magn. Angle(deg) 4.18 -151 0.03 -176 4.76 -170 0.03 161 5.21 167 0.03 135 5.43 145 0.04 108 5.34 122 0.04 84 5.07 102 0.04 59 4.74 84 0.04 41 4.48 70 0.03 25 4.23 54 0.03 7 4.05 40 0.03 -10 3.95 26 0.03 -24 S11 Magn. Angle(deg) 0.55 53 0.41 27 0.29 -16 0.28 -78 0.38 -124 0.49 -152 0.57 -170 0.62 178 0.65 166 0.66 156 0.66 146 Magn. 0.49 0.44 0.37 0.28 0.20 0.16 0.16 0.19 0.23 0.26 0.30 S22 Angle(deg) 66 51 33 11 -21 -61 -98 -120 -136 -147 -154 MITSUBISHI ELECTRIC June-'04 Power added efficiency P.A.E. (%) 60 MITSUBISHI SEMICONDUCTOR MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 |
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