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MMBT4401K PNP Epitaxial Silicon Transistor February 2005 MMBT4401K PNP Epitaxial Silicon Transistor Switching Transistor 3 Marking 2 1 2XK SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Ta = 25C unless otherwise noted Parameter Value 60 40 6 600 350 150 Units V V V mA mW C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO IBEV ICEX hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain * Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 100A, IC = 0 VCE = 35V, VEB = 0.4V VCE = 35V, VEB = 0.4V VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE = 2V, IC = 500mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA I C= 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 10V, f = 100MHz VCB=5V, IE=0, f=100KHz VCC = 30V, VBE = 2V IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA IB1 = IB2 = 15mA Min. 60 40 6 Max. Units V V V 100 100 20 40 80 100 40 nA nA 300 0.4 0.75 V V V V MHz 6.5 35 255 pF ns ns VCE (sat) VBE (sat) fT Cob tON tOFF Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time 0.75 250 0.95 1.2 * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MMBT4401K Rev. A MMBT4401K PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC = 10 IB hFE, DC CURRENT GAIN VCE = 1V 1 VBE(sat) 100 0.1 VCE(sat) 10 1 10 100 1000 0.01 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product 10000 10 Ccb [pF], CAPACITANCE IE = 0 f = 100KHz fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 VCE = 10V 100 1 1 10 100 10 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT 2 MMBT4401K Rev. A www.fairchildsemi.com MMBT4401K PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters 3 MMBT4401K Rev. A www.fairchildsemi.com MMBT4401K PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I15 4 MMBT4401K Rev. A www.fairchildsemi.com |
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