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Freescale Semiconductor Technical Data Document Number: MMG3010NT1 Rev. 1, 8/2005 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, P C S , B WA , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l small-signal RF. Features * Frequency: 0 to 6000 MHz * P1dB: 17 dBm @ 900 MHz * Small-Signal Gain: 15 dB @ 900 MHz * Third Order Output Intercept Point: 31 dBm @ 900 MHz * Single 5 Volt Supply * Internally Matched to 50 Ohms * Low Cost SOT -89 Surface Mount Package * Pb -Free and RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MMG3010NT1 0 -6000 MHz, 15 dB 17 dBm InGaP HBT 12 3 CASE 1514-01, STYLE 1 SOT-89 PLASTIC Table 1. Typical Performance (1) Characteristic Small-Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 15 -15 -25 17 31 2140 MHz 14 -17 -25 16.5 30 3500 MHz 12 -22 -15 15.5 28 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage (2) Supply Current (2) Symbol VCC ICC Pin Tstg TJ Value 7 300 10 -65 to +150 150 Unit V mA dBm C C RF Input Power Storage Temperature Range Junction Temperature (3) 2. Continuous voltage and current applied to device. 3. For reliable operation, the junction temperature should not exceed 150C. 1. VCC = 5 Vdc, TC = 25C, 50 ohm system Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 54 mA, TC = 25C) Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (4) 83 Unit C/W 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Freescale Semiconductor, Inc., 2005. All rights reserved. MMG3010NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit) Characteristic Small-Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) 1. For reliable operation, the junction temperature should not exceed 150C. Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 14 -- -- -- -- -- 46 -- Typ 15 -15 -25 17 31 4.5 54 5 Max -- -- -- -- -- -- 63 -- Unit dB dB dB dBm dBm dB mA V MMG3010NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 2 3 Pin Function 2 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22-A114) Machine Model (per EIA/JESD 22-A115) Charge Device Model (per JESD 22-C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 1 Package Peak Temperature 260 Unit C MMG3010NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 20 Gp, SMALL-SIGNAL GAIN (dB) TC = 85C 15 -40C 0 25C S11, S22 (dB) -10 S11 -20 S22 -30 VCC = 5 Vdc ICC = 54 mA -40 10 VCC = 5 Vdc 5 0 1 2 f, FREQUENCY (GHz) 3 4 0 1 2 f, FREQUENCY (GHz) 3 4 Figure 2. Small -Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency 17 P1dB, 1 dB COMPRESSION POINT (dBm) 16 Gp, SMALL-SIGNAL GAIN (dB) 900 MHz 15 14 13 12 11 10 8 9 10 11 12 13 1960 MHz 2600 MHz 2140 MHz 19 18 17 16 15 14 13 12 15 16 0.5 1 1.5 2 2.5 3 3.5 f, FREQUENCY (GHz) VCC = 5 Vdc ICC = 54 mA 3500 MHz VCC = 5 Vdc ICC = 54 mA 14 Pout, OUTPUT POWER (dBm) Figure 4. Small -Signal Gain versus Output Power IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 100 90 ICC, COLLECTOR CURRENT (mA) 80 70 60 50 40 30 20 10 0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 VCC, COLLECTOR VOLTAGE (V) 36 Figure 5. P1dB versus Frequency 33 30 27 VCC = 5 Vdc ICC = 54 mA 1 MHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4 24 21 Figure 6. Collector Current versus Collector Voltage Figure 7. Third Order Output Intercept Point versus Frequency MMG3010NT1 4 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 36 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 33 32 31 30 29 28 27 26 -40 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing -20 0 20 40 60 80 100 33 30 27 24 f = 900 MHz 1 MHz Tone Spacing 21 4.9 4.95 5 5.05 5.1 VCC, COLLECTOR VOLTAGE (V) T, TEMPERATURE (_C) Figure 8. Third Order Output Intercept Point versus Collector Voltage Figure 9. Third Order Output Intercept Point versus Case Temperature -30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 105 -40 MTTF (YEARS) VCC = 5 Vdc ICC = 54 mA f = 900 MHz 1 MHz Tone Spacing 103 0 3 6 9 12 15 120 125 130 135 140 145 150 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 54 mA -50 104 -60 -70 -80 -3 Figure 10. Third Order Intermodulation versus Output Power Figure 11. MTTF versus Junction Temperature ACPR, ADJACENT CHANNEL POWER RATIO (dB) 8 -20 VCC = 5 Vdc, ICC = 54 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) NF, NOISE FIGURE (dB) 6 -30 -40 4 -50 2 VCC = 5 Vdc ICC = 54 mA 0 0 1 2 f, FREQUENCY (GHz) 3 4 -60 -70 -3 0 3 6 9 12 15 Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single -Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power MMG3010NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 40-300 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 Z3 Z4 C2 Z4 PCB Z5 RF OUTPUT VCC Z1, Z5 Z2 Z3 0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip 0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 20 10 S21, S11, S22 (dB) 0 -10 -20 -30 -40 0 100 200 300 400 500 f, FREQUENCY (MHz) VCC = 5 Vdc ICC = 54 mA S22 MMG30XX Rev 2 L1 S11 C1 C2 S21 R1 C4 C3 Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2, C3 C4 L1 R1 Description 0.01 F Chip Capacitors 1000 pF Chip Capacitor 470 nH Chip Inductor 0 W Chip Resistor Part Number 0603A103JAT2A 0603A102JAT2A BK2125HM471 ERJ3GEY0R00V Manufacturer AVX AVX Taiyo Yuden Panasonic MMG3010NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 300-3600 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 Z3 Z4 C2 Z4 PCB Z5 RF OUTPUT VCC Z1, Z5 Z2 Z3 0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip 0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 20 10 S21, S11, S22 (dB) 0 -10 S11 -20 -30 S22 -40 300 800 1300 1800 2300 2800 VCC = 5 Vdc ICC = 54 mA 3300 3800 C1 L1 C2 S21 R1 C4 C3 MMG30XX Rev 2 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.01 F Chip Capacitor 1000 pF Chip Capacitor 56 nH Chip Inductor 0 W Chip Resistor Part Number 06035A151JAT2A 0603A103JAT2A 0603A102JAT2A HK160856NJ-T ERJ3GEY0R00V Manufacturer AVX AVX AVX Taiyo Yuden Panasonic MMG3010NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS Table 10. Class A Common Emitter S -Parameters at VCC = 5 Vdc, ICC = 54 mA, TC = 255C f GHz 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 S11 |S11| 0.18961 0.18946 0.18931 0.18916 0.18900 0.18887 0.18873 0.18856 0.18844 0.18829 0.18813 0.18799 0.18783 0.18769 0.18753 0.18738 0.18723 0.18703 0.18689 0.18674 0.18657 0.18643 0.18629 0.18613 0.18599 0.18582 0.18568 0.18567 0.18569 0.18591 0.18645 0.18767 0.18855 0.19030 0.19186 0.19364 0.19581 0.19775 0.20022 0.20274 0.20483 0.20673 0.21006 0.21183 0.21443 0.21661 174.356 172.591 170.087 168.286 166.103 163.926 161.691 159.363 157.207 154.948 152.775 150.556 148.43 146.278 144.103 142.071 140.126 138.174 136.334 134.574 132.862 131.57 130.147 128.841 127.621 126.515 125.418 124.471 123.602 122.392 120.668 119.047 117.338 115.719 114.043 112.379 110.938 109.449 108.079 106.526 105.054 103.673 102.263 100.83 99.385 98.005 |S21| 6.08599 6.06991 6.05558 6.04027 6.03125 6.01832 6.00664 5.99750 5.98612 5.97231 5.95537 5.94078 5.92660 5.90891 5.88998 5.86905 5.84578 5.82588 5.80670 5.77963 5.75495 5.72982 5.70191 5.67762 5.65132 5.62394 5.59479 5.56625 5.54822 5.52432 5.49674 5.46526 5.43646 5.40925 5.38177 5.35341 5.32341 5.29221 5.25998 5.22900 5.20224 5.16895 5.13639 5.10466 5.07001 5.03818 S21 176.121 173.709 171.476 169.492 167.447 165.299 163.288 161.184 159.055 157.036 154.979 152.921 150.895 148.835 146.803 144.751 142.751 140.772 138.776 136.782 134.777 132.79 130.817 128.866 126.933 124.986 123.074 121.175 119.257 117.274 115.354 113.429 111.53 109.673 107.795 105.878 104.011 102.117 100.28 98.422 96.556 94.728 92.885 91.074 89.25 87.453 |S12| 0.10045 0.10051 0.10055 0.10060 0.10065 0.10069 0.10073 0.10078 0.10085 0.10090 0.10098 0.10111 0.10103 0.10115 0.10113 0.10130 0.10126 0.10142 0.10134 0.10156 0.10146 0.10159 0.10169 0.10184 0.10183 0.10196 0.10201 0.10211 0.10220 0.10258 0.10272 0.10283 0.10301 0.10315 0.10333 0.10340 0.10356 0.10384 0.10401 0.10405 0.10413 0.10441 0.10441 0.10468 0.10472 0.10489 S12 -1.147 -1.684 -2.764 -3.23 -3.883 -4.61 -5.218 -5.914 -6.577 -7.176 -7.816 -8.444 -9.124 -9.76 -10.388 -11.106 -11.715 -12.347 -13.049 -13.635 -14.317 -14.945 -15.594 -16.271 -16.958 -17.615 -18.236 -18.888 -19.552 -20.344 -20.962 -21.702 -22.327 -23.09 -23.804 -24.547 -25.192 -25.884 -26.62 -27.296 -28.065 -28.819 -29.517 -30.238 -30.97 -31.768 |S22| 0.01890 0.01961 0.02022 0.02108 0.02178 0.02240 0.02324 0.02417 0.02490 0.02589 0.02683 0.02784 0.02895 0.03030 0.03176 0.03328 0.03472 0.03683 0.03847 0.04077 0.04304 0.04551 0.04827 0.05112 0.05460 0.05759 0.06146 0.06306 0.06362 0.06362 0.06377 0.06570 0.06858 0.07094 0.07392 0.07711 0.08039 0.08395 0.08764 0.09155 0.09523 0.09969 0.10388 0.10812 0.11217 0.11632 S22 -117.716 -119.073 -121.834 -123.647 -125.155 -127.572 -129.668 -131.224 -133.739 -135.854 -137.345 -139.784 -141.384 -143.84 -145.852 -147.52 -148.773 -150.721 -153.215 -155.358 -159.06 -162.691 -166.671 -170.497 -174.453 -178.275 178.051 174.258 170.85 163.521 160.673 158.125 155.716 153.133 151.055 148.881 147.016 145.259 143.574 141.882 140.434 138.992 137.594 136.199 134.891 133.499 MMG3010NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Class A Common Emitter S -Parameters at VCC = 5 Vdc, ICC = 54 mA, TC = 255C (continued) f GHz 2.4 2.45 2.5 2.55 2.6 2.65 2.7 2.75 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55 3.6 S11 |S11| 0.21882 0.22193 0.22303 0.22524 0.22731 0.22921 0.23072 0.23259 0.23443 0.23625 0.23786 0.23979 0.24125 0.24422 0.24610 0.24792 0.25072 0.25383 0.25590 0.25874 0.26159 0.26531 0.26829 0.27180 0.27525 96.635 95.395 93.907 92.5 91.106 89.599 88.26 86.873 85.515 84.122 82.84 81.448 80.072 78.711 77.547 76.337 75.174 73.947 72.848 71.738 70.666 69.68 68.707 67.687 66.773 |S21| 5.00516 4.97224 4.93831 4.90747 4.87540 4.84438 4.81170 4.77720 4.74514 4.71210 4.68334 4.64992 4.61988 4.58846 4.55812 4.52495 4.49699 4.46681 4.43561 4.40430 4.37458 4.34458 4.31385 4.28470 4.25389 S21 85.611 83.821 82.052 80.256 78.504 76.72 74.931 73.147 71.382 69.615 67.904 66.078 64.334 62.607 60.863 59.115 57.356 55.612 53.877 52.133 50.384 48.649 46.916 45.167 43.44 |S12| 0.10502 0.10521 0.10527 0.10541 0.10567 0.10587 0.10582 0.10600 0.10623 0.10637 0.10648 0.10664 0.10700 0.10702 0.10736 0.10733 0.10748 0.10765 0.10784 0.10813 0.10814 0.10821 0.10846 0.10856 0.10871 S12 -32.469 -33.265 -34.008 -34.706 -35.467 -36.255 -37.021 -37.804 -38.579 -39.349 -40.152 -41.004 -41.819 -42.586 -43.392 -44.248 -45.078 -45.892 -46.753 -47.687 -48.565 -49.382 -50.314 -51.229 -52.108 |S22| 0.12050 0.12557 0.12957 0.13384 0.13842 0.14269 0.14690 0.15188 0.15645 0.16075 0.16529 0.16969 0.17439 0.17909 0.18404 0.18914 0.19427 0.19983 0.20478 0.21036 0.21586 0.22115 0.22678 0.23264 0.23850 S22 132.176 130.946 129.503 128.151 126.605 125.06 123.585 122.036 120.364 118.48 116.779 114.827 112.861 111.23 109.114 107.101 105.076 102.924 100.877 98.897 96.818 94.763 92.769 90.836 88.858 MMG3010NT1 RF Device Data Freescale Semiconductor 9 1.7 7.62 0.305 diameter 3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.49 2.54 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 20. Recommended Mounting Configuration MMG3010NT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 3 A 4 4.70 4.40 1.87 1.79 0.15 M C A B B 0.60 0.40 2X R0.15 TYP 1.70 1.40 3 4 2.70 2.40 4.50 3.70 2X 4 TYP 1.30 0.70 5 0.48 0.38 1 2 3 2X 0.20 M C B 0.48 0.38 0.58 0.48 0.15 M C A B 0.15 M C A B 0.15 M C A B 0.46 0.40 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE. 4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE PLASTIC BODY. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 2X 4 TYP E.P. 2X R0.20 4X 0.10 C SEATING PLANE 1.50 1.50 1.65 1.55 STYLE 1: PIN 1. RF INPUT 2. GROUND 3. RF OUTPUT 0.65 0.55 1.35 1.25 C CASE 1514-01 ISSUE C SOT -89 PLASTIC BOTTOM VIEW MMG3010NT1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale.s Environmental Products program, go to http://www.freescale.com/epp. Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MMG3010NT1 Rev. 12 1, 8/2005 Document Number: MMG3010NT1 RF Device Data Freescale Semiconductor |
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