Part Number Hot Search : 
FSPL234F IRFR310 FSPL234F 2SC3896 16021 74AVCH1T 10124 MJE130
Product Description
Full Text Search
 

To Download MRF464 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF464/D
NPN Silicon RF Power Transistor
. . . designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. * Specified 28 Volt, 30 MHz Characteristics -- Output Power = 80 W (PEP) Minimum Gain = 15 dB Efficiency = 40% Intermodulation Distortion = -32 dB (Max) MATCHING PROCEDURE In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by Motorola consists of measuring hFE at the data sheet conditions and color coding the device to predetermined hFE ranges within the normal hFE limits. A color dot is added to the marking on top of the cap. Any two devices with the same color dot can be paired together to form a matched set of units.
MRF464
80 W (PEP), 30 MHz RF POWER TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Stud Torque (1) Value 35 65 4.0 10 250 1.4 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C Symbol RJC -- Max 0.7 8.5 Unit C/W In. Lb. CASE 211-11, STYLE 1
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = + 55C) V(BR)CEO V(BR)CES V(BR)EBO ICES 35 65 4.0 -- -- -- -- 10 Vdc Vdc Vdc mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) NOTE: 1. Case 145A-10 -- For Repeated Assembly Use 11 In. Lb. hFE 10 -- -- (continued)
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994
MRF464 1
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 200 pF
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain (Figure 1) (Pout = 80 W (PEP), IC = 3.6 Adc (Max), VCC = 28 Vdc, f1 = 30 MHz, f2 = 30.001 MHz) Intermodulation Distortion Ratio (Figure 1) (2) (Pout = 80 W (PEP), IC = 3.6 Adc (Max), VCC = 28 Vdc, f1 = 30 MHz, f2 = 30.001 MHz) GPE 15 -- dB
IMD
--
- 32
dB
Collector Efficiency (Pout = 80 W (PEP), IC = 3.6 Adc (Max), VCC = 28 Vdc, f1 = 30 MHz, f2 = 30.001 MHz) NOTE: 2. To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone. VBB RF BEADS
40
--
%
+ 500 F 1N248B 0.01 F 10 H RFC RFC RL = 50 0.1 F DUT ARCO 466 (80 - 480 pF) ARCO 469 (170 - 780 pF) T1 C.T. 10 1/2 W T2 (1:9) C2 C1 2000 pF BUTTON 0.01 F 25 F 28 Vdc -
RFC -- 20 Turns @12 AWG Enameled Wire Close Wound in 2 Layers, 1/4 I.D. T1 -- 20 Turns #24 AWG Wire Wound on Micro-Metals T37-7 Toroid Core T1 -- Center Tapped. T2 -- 1:9 XFMR; 6 Turns of 2 Twisted Pairs of #28 AWG Enameled Wire. T2 -- (8 Crests Per Inch) Bifilar Wound on Each of 2 Separate Balun Cores. T2 -- (Stackpole #57-1503, No. 14 Material) Interconnected as shown T2 -- RF Beads -- Ferroxcube #56-590-65/3B
VBB adjusted for ICQ -- 40 mAdc (ICQ = Quiescent VBB adjusted for ICQ -- 40 mAdc Collector Current) C1 -- 170 - 180 pF ARCO 469 or Equivalent C2 -- 330 pF
Figure 1. 30 MHz Test Circuit
MRF464 2
MOTOROLA RF DEVICE DATA
120 Pout , OUTPUT POWER (WATTS) 100 80 60 40 20 0 VCC = 28 Vdc IGQ = 40 mA f = 30 MHz
50
G PE , POWER GAIN (dB)
40
30
20 VCC = 28 Vdc ICQ = 40 mA Pout = 80 W PEP 2 3 5 7 10 15 20 30
10 0 1.5
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
Pin, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power
Figure 3. Power Gain versus Frequency
Pout , OUTPUT POWER (WATTS PEP)
120 100 80 60 40 20 0 16
ICQ = 40 mA f = 30, 30.001 MHz
IMD, INTERMODULATION DISTORTION (dB)
140
-10 VCC = 28 Vdc ICQ = 40 mA f = 30, 30.001 MHz
- 20
- 30 3RD ORDER - 40 5TH ORDER 3RD ORDER
IMD = - 30 dB
- 50 - 60 0 20 40 60
20
24
28
32
80
100
120
140
VCC, SUPPLY VOLTAGE (VOLTS)
Pout, OUTPUT POWER (WATTS PEP)
Figure 4. Output Power versus Supply Voltage
Figure 5. Intermodulation Distortion versus Output Power
2500 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS)
10
2000
8
1500
6
1000 VCC = 28 Vdc ICQ = 40 mA Pout = 80 W PEP 2 3 5 7 10 15 20 30
4 VCC = 28 Vdc ICQ = 40 mA Pout = 80 W (PEP) 2 3 5 7 10 15 20 30
500
2 0 1.5
1.5
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. Output Capacitance versus Frequency
Figure 7. Output Resistance versus Frequency
MOTOROLA RF DEVICE DATA
MRF464 3
10 IC, COLLECTOR CURRENT (AMPS)
8
6
4
2
0
0
5
10
15
20
25
30
35
40
VCC, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Safe Operating Area
1.0 2.0 3.0
0
1.0
30
4.0 2.0
VCC = 28 Vdc ICQ = 40 mA Pout = 80 W PEP FREQUENCY MHz 2.0 7.0 15 30 Zin Ohms 9.0 - j5.40 3.3 - j1.50 2.8 - j1.10 1.4 - j0.30
15 7.0
3.0
4.0
5.0 6.0 7.0 8.0 9.0 10 2.0 2.0 12
f = 2.0 MHz
6.0
4.0
Figure 9. Series Input Impedance
MRF464 4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A U M
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D K J H C E
SEATING PLANE
DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4.
INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --- 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730
MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --- 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54
EMITTER BASE EMITTER COLLECTOR
CASE 211-11 ISSUE N
MOTOROLA RF DEVICE DATA
MRF464 5
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF464 6
*MRF464/D*
MRF464/D MOTOROLA RF DEVICE DATA


▲Up To Search▲   

 
Price & Availability of MRF464

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X