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| MS2223 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * * GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 70 W MINIMUM Gp = 6.7 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2223 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter ballasting provides long term reliability under long pulse formats. ABSOLUTE MAXIMUM RATINGS Symbol VCC IC PDISS TJ T STG Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature Parameter (Tcase = 25 C) 32 8.0 200 200 - 65 to + 200 Value Unit V A W C C Thermal Data RTH(j-c) * Applies only to rated RF operation. Junction-Case Thermal Resistance* 0.68 C/W MSC0XXXA.DOC 5-13-99 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2223 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 C) (Tcase 25 Symbol BVCBO BVCER BVEBO Test Conditions IC = 25mA IC = 25 mA IE = 10 mA VCE = 35 V VCE = 5 V IE = 0 mA RBE = 10 W IC = 0 mA VBE = 0 V IC = 2A Min. 55 55 3.5 ---20 Value Typ. ---------------- Max. ---------20 200 Unit V V V mA ---- ICES hFE DYNAMIC Symbol POUT Test Conditions f = 1090 MHz PIN = 15 W f = 1090 MHz PIN = 15 W f = 1090 MHz PIN = 15 W hC GP Condition s VCC = 28 V VCC = 28 V VCC = 28 V Min. 70 45 6.7 Value Typ. ---------- Max. ---------- Unit W % dB Pulse Width: 100 m S Duty Cycle: 2% IMPEDANCE DATA: FREQUENCY 1025 MHz 1090 MHz Vcc = 28V Pin = 15W 4.7 + j4.7 4.7 + j3.9 Zin 3.6 + j4.3 3.3 + j4.4 Zcl MSC0XXXA.DOC 5-13-99 MS2223 PACKAGE MECHANICAL DATA MSC0XXXA.DOC 5-13-99 |
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