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| MWI 150-06 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 170 A = 600 V VCES VCE(sat) typ. = 2.0 V Preliminary data 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 1.5 ; TVJ = 125C Clamped inductive load; L = 100 H Conditions TVJ = 25C to 150C Maximum Ratings 600 20 170 115 ICM = 300 VCEK VCES 10 515 V V A A A s W Features * NPT IGBT technology * low saturation voltage * low switching losses * switching frequency up to 30 kHz * square RBSOA, no latch up * high short circuit capability * positive temperature coefficient for easy parallelling * MOS input, voltage controlled * ultra fast free wheeling diodes * solderable pins for PCB mounting * package with copper base plate Advantages TC = 25C * space savings * reduced protection circuits * package designed for wave soldering Typical Applications * AC motor control * AC servo and robot drives * power supplies VCE = VCES; VGE = 15 V; RG = 1.5 ; TVJ = 125C non-repetitive Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 1.1 400 125 30 225 35 2.3 4.6 6.5 520 2.5 6.5 1.5 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.24 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 150 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 3 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 150 A VGE = 15 V; RG = 1.5 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 150 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 1-2 340 340 MWI 150-06 A8 Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 210 130 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 150 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 150 A; diF/dt = -750 A/s; TVJ = 125C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 1.9 1.4 37 100 2.0 V V A ns 0.41 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.1 V; R0 = 8 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.1 V; R0 = 2.25 m Thermal Response Conditions operating Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 C C C V~ Nm IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions IGBT (typ.) Cth1 = 0.295 J/K; Rth1 = 0.176 K/W Cth2 = 1.750 J/K; Rth2 = 0.064 K/W Free Wheeling Diode (typ.) Cth1 = 0.21 J/K; Rth1 = 0.317 K/W Cth2 = 1.28 J/K; Rth2 = 0.093 K/W Characteristic Values min. typ. max. 1.8 m mm mm 0.01 300 K/W g Creepage distance on surface Strike distance in air with heatsink compound 10 10 Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 2-2 340 |
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