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| MWI 25-12 A7 MWI 25-12 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.2 V Preliminary Data 1 2 5 6 9 10 16 15 14 T NTC Type: MWI 25-12 A7 MWI 25-12 A7T NTC - Option: without NTC with NTC 3 4 17 7 8 11 12 T IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 47 ; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 50 35 ICM = 70 VCEK VCES 10 225 V V A A A s W Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Advantages Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.2 2.6 4.5 2 200 100 70 500 70 3.8 2.8 1650 120 2.7 6.5 2 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.55 K/W space savings reduced protection circuits package designed for wave soldering Typical Applications VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 25 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V AC motor control AC servo and robot drives power supplies Inductive load, TVJ = 125C VCE = 600 V; IC = 25 A VGE = 15 V; RG = 47 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-4 412 MWI 25-12 A7 MWI 25-12 A7T Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 50 33 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Conditions IF = 25 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 25 A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.3 1.7 20 200 2.7 V V A ns 1.19 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.5 V; R0 = 40.7 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 16.0 m Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 2.7 - 3.3 C C V~ Nm Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K IGBT (typ.) Cth1 = 0.136 J/K; Rth1 = 0.418 K/W Cth2 = 1.309 J/K; Rth2 = 0.132 K/W Free Wheeling Diode (typ.) Cth1 = 0.081 J/K; Rth1 = 0.973 K/W Cth2 = 0.915 J/K; Rth2 = 0.217 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. 5 m mm mm K/W g Higher magnification on page B3 - 72 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 2-4 412 MWI 25-12 A7 MWI 25-12 A7T 60 TJ = 25C VGE=17V 15V 13V 11V 60 TJ = 125C VGE=17V 15V 13V A 50 IC A 50 IC 40 40 30 20 9V 11V 30 20 10 0 0.0 9V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 60 A 50 IC VCE = 20V TJ = 25C 80 A 70 IF 60 50 40 30 20 TJ = 25C TJ = 125C 40 30 20 10 0 5 6 7 8 9 10 VGE 10 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics 20 V VCE = 600V IC = 25A Fig. 4 Typ. forward characteristics of free wheeling diode 60 A IRM trr 300 ns trr VGE 15 40 200 10 20 5 TJ = 125C VR = 600V IF = 25A IRM 100 0 0 20 40 60 80 100 120 140 nC QG 0 0 200 400 MWI 25-12A7 0 600 800 A/s -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 3-4 412 MWI 25-12 A7 MWI 25-12 A7T 14 12 mJ Eon 10 140 120 ns 100 td(on) tr Eon 80 VCE = 600V VGE = 15V RG = 47 TJ = 125C 6 mJ 5 t Eoff Eoff td(off) 600 ns 500 400 t VCE = 600V VGE = 15V RG = 47 TJ = 125C 4 3 8 6 4 2 0 0 300 200 100 0 60 40 20 0 2 1 0 0 10 20 30 40 IC tf 50 A 10 20 30 IC 40 50 A Fig. 7 Typ. turn on energy and switching times versus collector current 12 mJ 10 Eon 240 td(on) ns Eon 180 tr t 120 Fig. 8 Typ. turn off energy and switching times versus collector current 5 mJ 1500 VCE = 600V VGE = 15V IC = 25A TJ = 125C 8 6 4 VCE = 600V VGE = 15V IC = 25A TJ = 125C 4 Eoff td(off) Eoff ns 1200 t 900 600 300 0 200 240 tf 3 2 60 2 0 0 40 80 120 160 RG 0 200 240 1 0 0 40 80 120 160 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor 70 A 60 ICM 50 10 K/W 1 ZthJC RG = 47 TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor diode IGBT 40 30 20 0.1 0.01 0.001 10 single pulse 0 0 200 400 600 800 1000 1200 V VCE 0.0001 0.00001 0.0001 MWI 25-12A7 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 4-4 412 |
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