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| PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M23 FEATURES * NEW MINIATURE M23 PACKAGE: - World's smallest transistor package footprint -- leads are completely underneath package body - Low profile/0.55 mm package height - Ceramic substrate for better RF performance LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M23 0.5 * * 1 0.25 1.0 0.4 DESCRIPTION The NE856M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles. 0.6 0.15 2 3 0.25 0.2 0.15 BOTTOM VIEW PIN CONNECTIONS 1. Collector 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz Forward Current Gain at VCE = 3 V, IC = 7 mA Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz A A pF 0.7 UNITS GHz dB dB 7 80 MIN 3 NE856M23 2SC5649 M23 TYP 4.5 1.4 10.0 145 1 1 1.5 2.5 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. 0.55 California Eastern Laboratories NE856M23 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 20 12 3 TBD 150 -65 to +150 100 120 VCE = 3 V 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, IC (mA) 80 60 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 40 20 0 0 0.2 0.4 0.6 0.8 1 TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 120 IB = 40 A step 400 A Base to Emitter Voltage, VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 3 V Collector Current, IC (mA) 100 80 DC Current Gain, hFE 60 100 40 200 A 20 IB = 40 A 0 0 2 4 6 8 10 12 14 10 0.01 0.1 1 10 100 Collector to Emitter Voltage, VCE (V) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 8 Collector Current, IC (mA) NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 20 VCE = 3 V f = 1 GHz Gain Bandwidth Product, fT (GHz) 7 6 5 4 3 2 1 VCE = 3 V f = 2 GHz GA 6 12 4 8 2 NF 4 0 1 10 100 0 1 10 0 100 Collector Current, IC (mA) Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 02/10/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE Associated Gain, GA (dB) 8 16 Noise Figure, NF (dB) |
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