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| PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES * HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP * HIGH SPEED SWITCHING CHARACTERISTICS * NPN COMPLIMENT AVAILABLE: NE02133 * HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz NE97833 33 (SOT 23 STYLE) DESCRIPTION The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE ICBO IEBO CRE PT 2 NE97833 2SA1978 33 UNITS GHz dB dB 8.0 20 A A pF mW 0.5 MIN 4.0 TYP 5.5 2.0 10.0 40 100 -0.1 -0.1 1.0 200 3.0 MAX PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = -10 V, IC = -15 mA Noise Figure at VCE = -10 V, IC = -3 mA Insertion Power Gain at VCE = -10 V, IC = -15 mA, f = 1 GHz Forward Current Gain Ratio at VCE = -10 V, IC = -15 mA Collector Cutoff Current at VCB = -10 V, IE = 0 Emitter Cutoff Current at VBE = -2 V, IC = 0 Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz Total Power Dissipation Notes: 1. Electronic Industrial Association of Japan. 2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE97833 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS V V V mA C C RATINGS -20 -12 DC Current Gain, HFE -3 -50 150 -65 to +200 VCE = -3 V VCE = -2 V VCE = -1 V 10 100 DC CURRENT GAINS VS. COLLECTOR CURRENT Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 1 -0.1 -1.0 -10 -100 -1000 TYPICAL PERFORMANCE CURVES (TA = 25C) DC POWER DERATING CURVES 400 FREE AIR Collector Current, IC (mA) INSERTION GAIN vs. FREQUENCY Total Power Dissipation, PT (mW) 30 300 Insertion Power Gain, |S21E|2 20 VCE = -10 V IC = -15 mA 10 VCE = 1 V IC = 5 mA 200 NE97833 100 0 -10 0 0 50 100 150 200 100 200 300 500 1000 3000 Ambient Temperature, TA (C) Frequency, f (MHz) GAIN BANDWIDTH vs. COLLECTOR CURRENT 14 INSERTION GAIN vs. COLLECTOR CURRENT 14 f = 1 GHz Gain Bandwidth Product, fT (GHz) f = 1 GHz Insertion Power Gain, |S21E|2 12 10 VCE = -10 V 12 10 VCE = -10 V 8 8 6 VCE = -3 V 4 VCE = -1 V 2 0 6 4 VCE = -3 V VCE = -1 V 2 0 1 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) NE97833 TYPICAL PERFORMANCE CURVES (TA = 25C) DC CURRENT GAIN VS. COLLECTOR CURRENT 100 VCE = -10 V 6 VCE = 10 V f = 1 GHz NOISE FIGURE VS. COLLECTOR CURRENT DC Current Gain, HFE Noise Figure, NF -100 -1000 4 10 2 1.0 -0.1 0 -1.0 -10 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) SWITCHING CHARACTERISTICS UNITS tON (delay) tr PARAMETERS Turn-on Delay Time Rise Time UNITS ns ns ns ns VIN = 1 V TYP 1.10 0.77 0.40 0.79 tOFF (delay) Turn-off Delay Time tf Fall Time SWITCHING TIME MEASUREMENT CIRCUIT VCC (-) RC1 VOUT RL1 VIN RS Sampling Oscilloscope RC2 RL2 VIN tON (delay) 20 ns tr tf tOFF (delay) 50 VBB (-) VOUT RE VEE (+) VIN = 1 v, VBB = -0.5 V, RC1 = RC2 RS () 160 RC () 1K RL1 () 200 RL2 () 250 RE () 2.7 K VEE (V) 27 VCC (V) 26.3 NE97833 TYPICAL SCATTERING PARAMETERS (TA = 25C) 90 0.8 0.6 0.4 3 4 0.2 5 10 20 50 10 20 -50 -20 -10 S22 -0.2 -5 -4 -3 -0.4 -2 -0.6 -0.8 -1 -1.5 1 1.5 2 S21 135 45 S12 0.2 0.4 0.6 0.8 1 S11 1.5 2 3 45 180 0.1 0.2 0.3 0.4 0.5 0 2.5 NE97833 VCE = -8 V, IC = -10 mA 225 5.0 315 270 VCE = -5 V, IC = -10 mA FREQUENCY (GHz) 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 MAG 0.274 0.273 0.278 0.308 0.352 0.402 0.449 0.506 0.527 S11 ANG -149.2 -177.0 169.8 144.6 125.0 109.1 96.4 79.7 71.1 MAG 6.102 4.037 3.303 2.311 1.808 1.496 1.281 1.023 0.908 S21 ANG 96.9 82.0 74.5 58.7 45.3 33.5 23.6 9.1 -1.8 S12 MAG 0.063 0.093 0.114 0.170 0.229 0.288 0.345 0.458 0.574 ANG 68.1 70.1 70.3 68.1 63.9 58.3 52.4 40.7 27.4 S22 MAG 0.493 0.432 0.412 0.381 0.362 0.359 0.364 0.350 0.246 ANG -30.9 -32.2 -34.5 -44.8 -59.4 -75.9 -91.0 -113.5 -138.8 K 0.97 1.07 1.09 1.08 1.03 0.99 0.95 0.91 0.92 MAG1 (dB) 19.9 14.7 12.8 9.6 7.8 7.2 5.7 3.5 2.0 VCE = -8 V, IC = -10 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.252 0.240 0.243 0.272 0.316 0.369 0.418 0.479 0.503 -140.2 -171.6 173.7 145.9 125.3 109.0 96.4 79.9 71.7 6.426 4.270 3.496 2.445 1.911 1.582 1.353 1.076 0.950 98.5 83.5 76.0 60.5 47.2 35.6 25.5 10.7 -0.4 0.060 0.089 0.109 0.162 0.219 0.276 0.333 0.445 0.563 68.7 70.6 70.9 60.5 65.0 59.8 54.2 42.9 30.2 0.523 -29.0 0.463 -30.1 0.443 -32.3 0.515 -43.9 0.393 -55.2 0.388 -70.6 0.392 -85.0 0.379 -106.3 0.278 -127.3 0.95 1.05 1.08 1.11 1.02 0.98 0.94 0.90 0.90 20.3 15.4 13.4 9.8 8.4 7.6 6.1 3.8 2.3 VCE = -10 V, IC = -15 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.555 0.399 0.348 0.314 0.342 0.393 0.446 0.515 0.529 -80.8 -121.8 -143.5 173.5 142.8 120.2 103.4 81.7 69.6 4.097 3.325 2.864 2.107 1.669 1.382 1.179 0.934 0.844 116.8 94.8 84.2 64.5 49.0 36.0 25.6 11.9 3.0 0.076 0.094 0.106 0.140 0.186 0.241 0.302 0.433 0.575 55.1 53.5 55.4 69.0 62.8 61.5 57.9 47.8 34.3 0.697 -28.4 0.600 -32.6 0.564 -35.2 0.411 -39.4 0.494 -56.1 0.490 -70.2 0.496 -83.7 0.484 -105.8 0.382 -128.7 0.65 0.89 1.00 1.07 1.08 1.00 0.93 0.87 0.90 17.3 15.5 14.3 10.2 7.8 7.4 5.9 3.3 1.7 VCE = -10 V, IC = -3 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 Note: 1. Gain Calculation: MAG = |S21| |S12| 0.214 0.215 0.221 0.254 0.300 0.352 0.402 0.463 0.489 -153.1 179.7 166.8 141.5 122.3 107.1 95.0 79.5 72.1 6.846 4.489 3.664 2.554 1.992 1.648 1.410 1.121 0.984 96.2 82.4 75.4 60.6 47.7 36.2 26.3 11.3 -0.2 0.058 0.087 0.108 0.163 0.220 0.276 0.331 0.440 0.555 73.2 74.0 73.7 70.6 66.0 60.4 54.6 43.4 31.0 0.506 -27.0 0.456 -27.9 0.439 -30.1 0.441 -41.8 0.393 -52.7 0.387 -68.0 0.389 -82.1 0.377 -102.6 0.277 -121.3 0.99 1.06 1.07 1.05 1.01 0.97 0.94 0.89 0.89 20.7 15.6 13.7 10.6 8.9 7.8 6.3 4.1 2.5 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE97833 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 OUTLINE 33 RECOMMENDED P.C.B. LAYOUT 2.4 2 2.9 0.2 0.95 1.9 2 +0.10 0.4 -0.05 (ALL LEADS) 3 1.9 0.95 3 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 0.8 1 1.0 1.1 to 1.4 0.8 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 +0.10 0.16 -0.06 ORDERING INFORMATION PART NUMBER NE97833-T1 QUANTITY 3000 PACKAGING Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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