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DOMINANT
Semiconductors
Innovating Illumination
TM
DATA SHEET:
SPNovaLEDTM
InGaN White High Lumens : 350 mA
SPNovaLED
TM
Featuring a staggering brilliance and significant flux output, the SPNovaLEDTM showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra low high profile, which is only 1.5 mm are highly suitable for both conventional lighting and specialized application such as automotive signal lights, traffic lights, channel lights, tube lights and garden lights among others.
Features:
> Super high brightness surface mount LED. > High flux output; typical 60 lumens > 120 viewing angle. > Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm. > Ultra low height profile - 1.5 mm. > Designed for high current drive; typically 350 mA. > Low thermal resistance; Rth (js) = 18 K/W. > Qualified according to JEDEC moisture sensitivity Level 2. > Compatible to both IR reflow soldering. > Environmental friendly; RoHS compliance. > SPNovaLED are Class 1M LED products. Do not view directly with optical instrument.
Applications:
> Automotive: exterior applications, eg: Center High Mounted Stop Light (CHMSL), Rear Combination Lights (RCLs), Signal lightting, Fog-lamp, etc. > Communication: indicator and backlight in mobilephone. > Industry: white goods (eg: Oven, microwave, etc.). > Lighting: garden light, architecture lighting, general lighting. etc
(c) 2005 SPNovaLED is a trademark of DOMINANT Semiconductors. All rights reserved. Product specifications are subject to change without notice.
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Part Ordering Number
NPW-TSD-ADE-1 * NPW-TSD-AD * NPW-TSD-AE
Chip Technology / Color
InGaN
Viewing Angle
120
Luminous Intensity @ IF = 350mA (mcd)
14000.0 - 22400.0 14000.0 - 18000.0 18000.0 - 22400.0
NOTE 1. Luminous intensity is measured with an accuracy of 11%. 2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.
Electrical Characteristics at Ta=25C
Part Number
NPW-TSD
Vf @ If = 350mA Typ. (V) Max. (V)
3.6 4.0
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of 0.1V.
Material
Material
Lead-frame Package Encapsulant Soldering Leads Cu Alloy With Ag Plating High Temperature Resistant Plastic, PPA Silicone Resin Sn-Sn Plating
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DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Absolute Maximum Ratings
Maximum Value
DC forward current Peak pulse current Reverse Voltage ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature 350 1000 Not designed for reverse bias 2000 120 -40 ... +100 -40 ... +100
Unit
mA mA V V C C C
Correlated Color Temperature (CCT)
Color Bin
Y3 Y2 Y1 X3 X2 X1
Minimum CCT (K)
4500 5000 5500 6000 7000 8000
Maximum CCT (K)
5000 5500 6000 7000 8000 10000
Note: CCT values provided for each of the color bins are an approximation based on correlation.
Correlation Between Luminous Intensity And Luminous Flux
IV Bin
AD AE
Luminous Intensity (mcd) Min
14000 18000
Luminous Flux (lm) Min
40.0 55.0
Max
18000 22400
Max
55.0 70.0
Note: Data provided above is an approximation base on statistical correlation.
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens: 350 mA
Color Bin
White Bin Structure
0.44 0.42 0.40 0.38 0.36 0.34 0.32 0.30 0.28 0.26 0.24 0.22 0.26 0.27
* *
*
X1
*
X2
*
X3
*
Y1
*
Y2
*
Y3
*
0.29
*
*
*
*
*
0.28
0.30
0.31
0.32
0.33
0.34
0.35
0.36
Chromaticity coordinate groups are measured with an accuracy of 0.01.
Bin
X1 X2 X3 Y1 Y2 Y3 Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy
1
0.278 0.243 0.290 0.265 0.303 0.286 0.315 0.308 0.328 0.330 0.340 0.351
2
0.290 0.265 0.303 0.286 0.315 0.308 0.328 0.330 0.340 0.351 0.353 0.373
3
0.290 0.310 0.303 0.331 0.315 0.353 0.328 0.375 0.340 0.396 0.353 0.418
4
0.278 0.288 0.290 0.310 0.303 0.331 0.315 0.353 0.328 0.375 0.340 0.396
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Relative Flux Vs Forward Current
Relative Flux; Normalized at 350mA
1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600
Relative Intensity Vs Forward Current
Relative Intensity; Normalized at 350mA
1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600
Forward Current, mA
Forward Current, mA
Forward Current Vs Forward Voltage
600 500
Relative Spectral Emission
1 0.9 0.8
Forward Current, mA
Relative Intensity
2 2.5 3 3.5 4 4.5
400 300 200 100 0
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 400 500 600 700
Forward Voltage, V
Wavelength, nm
Forward Current Vs Ambient Temperature (Rja=40K/W)
400 350
Maximum Permissible Current, Ta=25 Maximum Permissible Pulse Pulse Current C
1000 900
Forward Current, mA
Pulse Current, mA
0 10 20 30 40 50 60 70 80 90 100
300 250 200 150 100 50 0
800 700 600 500 400 300 200 1 10 100
Ambient Temperature
5
Duty (%); Tp<=0.01 sec
24/07/2007 V3.0
2
2.5
3
3.5
4
4.5
DOMINANT
Semiconductors
Innovating Illumination
TM
InGaN White High Lumens : 350 mA
Forward Current Vs Solder Point Temperature Forward Current Vs Temperature
400 350
Forward Voltage, V
Radiation Pattern
30 o 20
o
10 o
0o 1.0
Forward Current, mA
40 o
0.8
300 250 200 150 100 50 0 0 20 40 60 80 100
50 60 70 80
0.6
o
o
0.4
o
0.2
o
90 o
0
SolderTemperature Point Temperature
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
TM
InGaN White High Lumens : 350 mA
SPNovaLED * InGaN White High Lumens : 350 mA Package Outlines
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Solder Pad Design
Note: Metal core circuit board (MCPCB) is highly recommended for applications. Please consult sales and marketing for additional information.
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Taping and orientation
* Reels come in quantity of 2000 units. * Reel diameter is 330 mm.
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Packaging Specification
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Packaging Specification
Moisture sensitivity level
Barcode label
DOMINANT Semiconductors
LOT NO : lotno
ROHS Compliant PB Free
S/N : xxx D/C: xxxx
PART NO : partno QTY : qty GROUP : group
Reel Moisture absorbent material + Moisture indicator The reel, moisture absorbent material and moisture indicator are sealed inside the moisture proof foil bag
Average 1pc SPNovaLED
Weight (gram) Weight (gram) 0.188 0.034
1 completed bag (2000pcs)
800 10 190 10
DOMINANT TM
Semiconductors
Cardboard Box
For SPNovaLED
Cardboard Box Size
Large
TM
Dimensions (mm)
Empty Box Weight (kg)
1.74
Reel / Box
Quantity / Box (pcs)
416 x 516 x 476
20 reels MAX
40,000 MAX
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Recommended Sn-Pb IR-Reflow Soldering Profile
Classification Reflow Profile (JEDEC J-STD-020C)
275 250 225 200 Ramp-up 3C/sec max. 235-240C 10-30s
Temperature (C)
175 150 125 100 75 50 25 0 50 100 150 200 Preheat 60-120s 360s max Rampdown 6C/sec max. 183C 60-150s
Recommended Pb-free Soldering Profile
Classification Reflow Profile (JEDEC J-STD-020C)
300 275 250 225 217C Ramp-up 3C/sec max. 255-260C 10-30s
Temperature (C)
200 175 150 125 100 75 50 25 0 50 Preheat 60-180s 480s max 100 150 200 Rampdown 6C/sec max. 60-150s
Time (sec)
12
24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Revision History
Page Subjects New Format & Add Maximum Permissible Pulse Current Graph Change package drawing Update typical flux output to 60lm Update IV Vs Flux correlation table Date of Modification 24 Aug 2006
7 1 3
30 May 2007 24 July 2007 24 July 2007
NOTE All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT Semiconductors does not assume any liability arising out of the application or use of any product described herein. DOMINANT Semiconductors reserves the right to make changes at any time without prior notice to any products in order to improve reliability, function or design. DOMINANT Semiconductors products are not authorized for use as critical components in life support devices or systems without the express written approval from the Managing Director of DOMINANT Semiconductors.
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24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
About Us DOMINANT Semiconductors is a dynamic Malaysian Corporation that is among the world's leading SMT LED Manufacturers. An excellence - driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certified quality assurance acclaim, DOMINANT's extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT's state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Semiconductors can be found on the Internet at http://www.dominant-semi.com.
Please contact us for more information: Head Quarter DOMINANT Semiconductors Sdn. Bhd. Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia Tel: (606) 283 3566 Fax: (606) 283 0566 E-mail: sales@dominant-semi.com
DOMINANT China Sales Office E-mail: sales_china@dominant-semi.com
DOMINANT Korea Sales Office DOMINANT Semiconductors Korea Inc. #709, Yatap Leaders Bldg., 342-1, Yatap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do, 463-828 Korea. Tel: 82-31-701-5203 Fax: 82-31-701-5204 E-mail: sales_korea@dominant-semi.com
Semiconductors
Innovating Illumination
DOMINANT
TM

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