NTE126
Germanium Mesa Transistor, PNP, for High-Speed Switching Applications
Maximum Ratings: Collector-Emitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5Vdc Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +100C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +100C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage (IC = 100Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100Adc, IC = 0) Collector-Latch-Up Voltage (VCC = 11.5 Vdc) Collector-Emitter Cutoff Current (VCE = 15Vdc) Collector-Base Cutoff Current (VCB = 6Vdc, IE = 0) DC Current Gain (IC = 10mAdc, VCE = 0.3Vdc) (IC = 50mAdc, VCE = 1Vdc) (IC = 100mAdc, VCE = 1Vdc) Collector-Emitter Saturation Voltage (IC = 10mAdc, IB = 1mAdc) (IC = 50mAdc, IB = 5mAdc) (IC = 100mAdc, IB = 10mAdc) Symbol BVCBO 15 BVEBO 2.5 LVCEX 11.5 ICES - ICBO - hFE 40 40 40 VCE(sat) - - - 0.18 0.35 0.60 - - - Vdc 3.0 - 100 Adc - Adc - Vdc - Vdc Min Max Unit Vdc
Electrical Characteristics (Cont'd): (TA = 25C) Parameter Base-Emitter Saturation Voltage (IC = 10mAdc, IB = 1mAdc) (IC = 50mAdc, IB = 5mAdc) (IC = 100mAdc, IB = 10mAdc) Current-Gain-Bandwidth Product (IE = 20mAdc, VCB = 1.0Vdc, f = 100MHz) Output Capacitance (VCB = 10Vdc, IE = 0, f = 1MHz) Emitter Transition Capacitance (VEB = 1Vdc) Turn-On Time (IC = 10mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc) (IC = 100mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc) Turn-Off Time (IC = 10mAdc, IB1 = 1mAdc, IB2 = 0.25mAdc) (IC = 100mAdc, IB1 = 5mAdc, IB2 = 1.25mAdc) Total Control Charge (IC = 10mAdc, IB = 1mAdc) (IC = 100mAdc, IB = 5mAdc) Symbol VBE(sat) 0.30 0.40 0.40 fT 300 Cob - CTe - ton - - toff - - QT - - 80 125 85 85 pC 50 50 ns 3.5 ns 4.0 pF - pF 0.50 0.75 1.00 MHz Min Max Unit Vdc
.230 (5.84) Dia Max .195 (4.95) Dia Max
.210 (5.33) Max
.500 (12.7) Min
.018 (0.45) Base Emitter Collector
45
.041 (1.05)
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