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Datasheet File OCR Text: |
NTE16006 Silicon NPN Transistor Low Frequency Output Amp w/High Current Gain Features: D High DC Current Gain D Low Collector-Emitter Saturation Voltage D An M type mold package that allows easy manual and automatic insertion. Can be firmly mounted flush to PCB surface Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation (Note 1), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Copper foil on PCB against Collector: 1.7mm thick, 1cm2 in area. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cut-Off Current Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Test Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA, Note 2 IC = 500mA, IB = 50mA, Note 2 VCB = 20V, IE = -20mA, f = 200MHz VCB = 10 V, IE = 0, f = 1MHz Min - - 20 20 15 1000 - - - Typ - - - - - - - 55 11 Max 1 10 - - - 2500 0.4 - 15 Unit A A V V V - V MHz pF Note 2. Pulse Measurement .271 (6.9) .098 (2.5) .137 (3.5) B C E .039 (1.0) .039 (1.0) .177 (4.5) .122 (3.1) .161 (4.1) .098 (2.5) |
Price & Availability of NTE16006
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