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| NTE2503 Silicon NPN Transistor High Gain Switch Features: D High DC Current Gain D High Current Capacity D Low Collector-Emitter Saturation Voltage D High Emitter-Base Voltage Applications: D AF Amplifier D Various Driver Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Test Conditions VCB = 20V, IE = 0 VEB = 10V, IC = 0 IC = 50mA, VCE = 5V IC = 500mA, VCE = 5V IC = 50mA, VCE = 10V VCB = 10V, f = 1MHz Min - - 600 - - Typ - - - 270 9 Max 0.1 0.1 - - - MHz pF Unit A A 800 1500 3200 Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector Saturation Voltage Base Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) Test Conditions IC = 500mA, IB = 10mA IC = 500mA, IB = 10mA Min - - 30 25 15 - - - Typ 0.15 0.9 - - - 0.1 0.6 0.06 Max 0.50 1.2 - - - - - - Unit V V V V V s s s V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 10A, IC = 0 ton tstg tf IB1 = 100mA, IB2 = IC = 300mA, Pulse Width = 20s, Duty Cycle 1% .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max ECB .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
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