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| NZT902 NPN Low Saturation Transistor September 2006 NZT902 NPN Low Saturation Transistor 4 tm * These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol VCEO VCBO VEBO IC TJ TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Range - Continuous Value 90 120 5 3 150 - 55 ~ +150 Units V V V A C C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25C unless otherwise noted a Symbol PD RJA Parameter Total Device Dissipation Thermal Resistance, Junction to Ambient Value 1 125 Units W C/W * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. Electrical Characteristics* Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE Ta = 25C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Test Conditions IC = 10mA IC = 100A IE = 100A VCB = 100V VCB = 100V, Ta = 100 C VEB = 4V IC = 0.1A, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V IC = 0.1A, IB = 5.0mA IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA VCB = 10V, IE = 0, f = 1MHz IC = 100mA, VCE = 5V, f = 100MHz Min. 90 120 5 Typ. Max. Units V V V 100 10 100 80 80 25 50 250 600 1.25 35 75 nA uA nA VCE(sat) Collector-Emitter Saturation Voltage mV mV mV V pF MHz VBE(sat) Cobo fT Base-Emitter Saturation Voltage Output Capacitance Transition Frequency * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com NZT902 Rev. B NZT902 NPN Low Saturation Transistor Typical Performance Characteristics Figure 1. Static Characteristic 0.40 0.35 0.30 Figure 2. DC current Gain 350 1.6mA 300 150 C 75 C 25 C -25 C o o o o Vce=2V 1.4mA Collector Current, Ic [A] 1.2mA 0.25 250 1.0mA 0.20 0.15 0.10 0.05 0.00 0.0 hfe, Current Gain 200 0.8mA 0.6mA 0.4mA Ib=0.2mA 150 100 -50 C o 50 0.5 1.0 1.5 2.0 0 1E-3 0.01 0.1 1 Collector-Emitter Voltage, Vce[V] Collector Current, [A] Figure 3. Collector-Emitter Saturation Voltage 0.5 Figure 4. Base-Emitter Saturation Voltage 1.2 B=10 Vce(sat), Saturation Voltage,[V] Vbe(sat), Saturation Voltage,[V] 0.4 B=10 150 C 75 C 25 C o o o 1.0 -25 C 0.8 o -50 C o 0.3 0.2 0.6 -25 C 0.1 o 25 C 75 C 0.4 o o -50 C o 150 C o 0.0 0.1 1 0.2 0.01 0.1 1 Collector Current, [A] Collector Current, [A] Figure 5. Output Capacitance 80 70 Figure 6. Power Dissipation vs Ambient Temperature 1.5 Output Capacitance, Cobo[pF] 60 50 40 30 20 10 Pd, Power Dissipation,[W] f=1mhz 1.0 0.5 0.0 0 20 40 60 80 100 0 25 50 75 100 o 125 150 Reverse Voltage, VR[V] Case Temperature, TC[ C] 2 NZT902 Rev. B www.fairchildsemi.com NZT902 NPN Low Saturation Transistor Typical Performance Characteristics Figure 9. SOA 10 Icmax Collector Current. Ic[A] 1 0.1 0.01 Vceo(Max) 1E-3 0.1 1 10 100 Collector-Emmiter Voltage, Vce[V] 3 NZT902 Rev. B www.fairchildsemi.com NZT902 NPN Low Saturation Transistor Mechanical Dimensions SOT-223 0.08MAX 3.00 0.10 MAX1.80 1.75 0.20 3.50 0.20 (0.60) 0.65 0.20 +0.04 0.06 -0.02 2.30 TYP (0.95) 4.60 0.25 0.70 0.10 (0.95) +0.10 0.25 -0.05 (0.60) 0~ 10 1.60 0.20 (0.46) (0.89) 6.50 0.20 7.00 0.30 Dimensions in Millimeters 4 NZT902 Rev. B www.fairchildsemi.com NZT902 NPN Low Saturation Transistor NZT902 NPN Low Saturation Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 NZT902 Rev. B www.fairchildsemi.com |
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