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| INFRARED DETECTOR PbS photoconductive detector P2532-01, P2682-01 Infrared detectors utilizing photoconductive effects Features Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors l High sensitivity l Large active area l Low price l Lower temperature detection limit: 100 C l Thermoelectrically cooled types Cooling a PbS cell increases sensitivity and improves S/N, so cooled types are widely used in precision photometry such as in analytical instruments. Applications l Room temperature operation l Radiation thermometers l Flame monitors l Water content analyzers l Food ingredient analysis l Spectrophotometers Accessories (Optional) l Heatsink for one-stage TE-cooled type l Heatsink for two-stage TE-cooled type l Temperature controller for TE-cooled type l Preamplifier for PbS/PbSe photoconductive detector l Power supply for amplifier l Infrared detector module with preamp Cooled type A3179 A3179-01 C1103-04 C3757-02 C3871 P4638 s Specification / Absolute maximum ratings Type No. Dimensional outline/ Package Window 1 material * /S TO-8 P2682-01 /S Cooling Absolute maximum ratings Active Thermistor Thermistor TE-cooler Operating Storage Supply temperature temperature area resistance power current voltage Topr Tstg dissipation dissipation (mm) (mW) (A) (V) (C) (C) (k) 1.5 4x5 9 0.2 1.0 100 -30 to +5 0 -55 to +5 0 P2532-01 One-stage TE-cooled Two-stage TE-cooled s Electrical and optical characteristics (Typ. unless otherwise noted) Measure ment Peak Cut-off condition sensitivity wavelength Element wavelength c temperature p Photo sensitivity *2 Rise time Dark S D D resistance tr =p (p, 600, 1) (500, 600, 1) Rd 0 to 63 % Vs=15 V Typ. Max. Min. Typ. Min. (c m* Hz 1/2 / W) (c m* Hz 1/2 / W) (c m* Hz 1/2 / W) (s) (V/W) (V/W) (M) 0.5 to 10 3 x 104 8 x 104 5 x 108 1 x 109 1 x 1011 600 0.8 to 10 6 x 104 1.6 x 105 8 x 108 2 x 109 2 x 1011 Type No. (C) (m) (m) P2532-01 -10 2.4 3.1 P2682-01 -20 2.5 3.2 *1: Window material S: sapphire glass *2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance 1 PbS photoconductive detector s Spectral response 100 -20 C (Typ.) P2532-01, P2682-01 (Typ. Ta=25 C) 8 7 s S/N vs. supply voltage 800 80 -10 C 600 SIGNAL 6 RELATIVE VALUE (%) SIGNAL (V) 60 25 C 40 400 NOISE 200 4 3 20 0 1 2 3 4 5 0 0 10 2 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 W/cm2 1 CHOPPING FREQUENCY: 600 Hz FREQUENCY BANDWIDTH: 60 Hz 0 20 40 50 60 30 WAVELENGTH (m) KIRDB0279EA SUPPLY VOLTAGE (V) KIRDB0046EA If voltage of higher than 60 V is applied, the noise increases exponentially, degrading the S/N. The device should be operated at 60 V or less. s S/N vs. chopping frequency 10 3 s Photo sensitivity temperature characteristic 103 (Typ.) (Typ. Ta=25 C) LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 W/cm2 SUPPLY VOLTAGE: 15 V tr: 200 s S/N S 10 2 RELATIVE SENSITIVITY RELATIVE S/N 102 N 101 1 10 10 1 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 W/cm2 CHOPPING FREQUENCY: 600 Hz SUPPLY VOLTAGE: 15 V 102 103 -20 -10 0 10 20 30 40 50 60 CHOPPING FREQUENCY (Hz) KIRDB0047EB ELEMENT TEMPERATURE (C) KIRDB0048EB Increasing the chopping frequency reduces the 1/f noise and results in an S/N improvement. The S/N can also be improved by narrowing the noise bandwidth using a lock-in amplifier. Cooling the device enhances its sensitivity, but the sensitivity also depends on the load resistance in the circuit. s Dark resistance, rise time temperature characteristics 103 (Typ.) s Photo sensitivity linearity 10 2 (Typ. Ta=25 C, FULLY ILLUMINATED) DARK RESISTANCE 101 RELATIVE OUTPUT RELATIVE VALUE 100 10 2 RISE TIME 10-1 10 -2 DEPENDENT ON NEP 10 1 -20 -10 0 10 20 30 40 50 60 10-3 -9 10 10 -8 10 -7 10 -6 10 -5 10 -4 ELEMENT TEMPERATURE (C) KIRDB0049EB INCIDENT ENERGY (W/cm2) KIRDB0050EA By making the incident light spot smaller than the active area, the upper limit of the linearity becomes lower. 2 NOISE (V) 5 PbS photoconductive detector s Cooling characteristics of TE-cooler P2532-01, P2682-01 s Current vs. voltage characteristics of TE-cooler (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) 40 (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) 1.6 1.4 ELEMENT TEMPERATURE (C) 20 ONE-STAGE TE-COOLED 1.2 ONE-STAGE TE-COOLED CURRENT (A) 0 1.0 0.8 0.6 0.4 0.2 TWO-STAGE TE-COOLED -20 TWO-STAGE TE-COOLED -40 -60 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 0.2 0.4 0.6 0.8 1.0 1.2 CURRENT (A) KIRDB0171EA VOLTAGE (V) KIRDB0115EB s Thermistor temperature characteristic 106 (Typ.) RESISTANCE () 105 104 10 3 -40 -30 -20 -10 0 10 20 30 ELEMENT TEMPERATURE (C) KIRDB0116EA s Connection example (P2682-01) CABLE (SUPPLIED WITH C3757-02) POWER SUPPLY FOR PREAMP 2-CONDUCTOR SHIELDED CABLE P2682-01 + A3179-01 DETECTOR AND HEATSINK BNC CONNECTOR CABLE (SOLD SEPARATELY) C3757-02 C3871 AMP LOCK-IN AMP or SPECTRUM ANALYZER SIGNAL PROCESSING CIRCUIT C1103-04 TEMPERATURE CONTROLLER C4696 CHOPPER CABLE (SUPPLIED WITH C1103-04) Connect C1103-04 and C3871 ground terminals together. KIRDC0003EA 3 PbS photoconductive detector s Dimensional outlines (unit: mm) P2532-01 15.3 0.2 14 0.2 6.4 0.2 P2532-01, P2682-01 P2682-01 15.3 0.2 14 0.2 4.5 0.2 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 0.2 5.1 0.2 0.45 LEAD 10.2 0.2 5.1 0.2 5.1 0.2 KIRDA0116EA 5.1 0.2 DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR 12 MIN. DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR PHOTOSENSITIVE SURFACE 6.9 0.2 10 0.2 WINDOW 10 0.2 WINDOW 10 0.2 KIRDA0117EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1019E06 4 Sep. 2003 DN |
Price & Availability of P2682-01
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