 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INFRARED DETECTOR PbS photoconductive detector P9217 Infrared detectors utilizing photoconductive effects P9217 is a PbS photoconductive detector with greatly improved stability and resistance to high temperatures when compared to conventional types. Features Applications l Resistance to high temperatures, stability l Lower temperature detection limit: 100 C approx. l Radiation thermometers l Flame monitors l Water content analyzers l Food ingredient analysis l Spectrophotometers Accessories (Optional) l Preamplifier for PbS/PbSe photoconductive detector l Power supply for amplifier C3757-02 C3871 s Specification Parameter Window material Package Cooling Active area Specification Borosilicate glass TO-5 Non-cooled 1x5 Unit mm s Absolute maximum ratings Parameter Supply voltage Operating temperature Storage temperature Symbol Topr Tstg Value 100 -30 to +65 -55 to +65 Unit V C C s Electrical and optical characteristics (T=25 C) Parameter Peak sensitivity wavelength Cut-off wavelength Photo sensitivity *1 Min. Typ. 2.2 2.9 4 x 104 1 x 105 =p, Vs=15 V (500, 600, 1) 5 x 108 1 x 109 Detectivity D* (p, 600, 1) 1 x 1011 Rise time tr 0 to 63 % Dark resistance Rd 0.05 *1: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance. Symbol p c S Condition Max. 250 1 Unit m m V/W cm * Hz1/2/W s M PRELIMINARY DATA Jun. 2003 1 PbS photoconductive detector s Spectral response 100 (Typ. T=25 C) P9217 s S/N vs. supply voltage 800 (Typ. Ta=25 C) 8 7 80 600 SIGNAL 6 RELATIVE VALUE (%) SIGNAL (V) 60 400 NOISE 200 4 3 40 20 0 1 2 3 4 5 0 0 10 2 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 W/cm2 1 CHOPPING FREQUENCY: 600 Hz FREQUENCY BANDWIDTH: 60 Hz 0 20 40 50 60 30 WAVELENGTH (m) KIRDB0301EA SUPPLY VOLTAGE (V) KIRDB0046EA If voltage of higher than 60 V is applied, the noise increases exponentially, degrading the S/N. The device should be operated at 60 V or less. s S/N vs. chopping frequency 10 3 s Photo sensitivity temperature characteristic 103 (Typ.) (Typ. Ta=25 C) LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 W/cm2 SUPPLY VOLTAGE: 15 V tr: 200 s S/N S 102 RELATIVE SENSITIVITY (%) RELATIVE S/N 10 2 N 10 1 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 W/cm2 CHOPPING FREQUENCY: 600 Hz SUPPLY VOLTAGE: 15 V 101 -10 0 10 20 30 40 50 60 70 101 102 103 CHOPPING FREQUENCY (Hz) KIRDB0047EB ELEMENT TEMPERATURE (C) KIRDB0302EA Increasing the chopping frequency reduces the 1/f noise and results in an S/N improvement. The S/N can also be improved by narrowing the noise bandwidth using a lock-in amplifier. Cooling the device enhances its sensitivity, but the sensitivity also depends on the load resistance in the circuit. s Dark resistance, rise time temperature characteristics 10 3 s Photo sensitivity linearity 102 (Typ. Ta=25 C, FULLY ILLUMINATED) (Typ.) RISE TIME 101 RELATIVE VALUE (%) RELATIVE OUTPUT 100 102 DARK RESISTANCE 10-1 10-2 DEPENDENT ON NEP 10 1 -10 0 10 20 30 40 50 60 70 10-3 -9 10 10-8 10-7 10-6 10-5 10-4 ELEMENT TEMPERATURE (C) KIRDB0303EA INCIDENT ENERGY (W/cm2) KIRDB0050EA By making the incident light spot smaller than the active area, the upper limit of the linearity becomes lower. 2 NOISE (V) 5 PbS photoconductive detector s Dimensional outline (unit: mm) 9.1 0.3 8.1 0.1 WINDOW 5.9 0.1 P9217 0.4 MAX. 2.3 0.2 0.45 LEAD 5.1 0.2 CASE 1.5 MAX. 18 MIN. KIRDA0166EA PHOTOSENSITIVE SURFACE Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1065E01 4.3 0.2 Jun. 2003 DN |
Price & Availability of P9217
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |