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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors PCR 0.6 A FEATURES Silicon Planar pnpn Thyristor TO 92 1.CATHODE Current-IGT :120|I A ITRMS : VDRM : 0.6A 400V 2.GATE 3.ANODE 123 Operating and storage junction temperature range T J T stg : -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter On state voltage Gate trigger voltage Repetitive peak off-state voltage Symbol VTM VGTF VDRM unless Test otherwise specified(c) MIN MAX 1.7 0.8 400 UNIT V V V conditions ITM=0.6A VAK=7V IDRM= 10 |I A Holding current IH A2 A1 A-1 IHL= 20 mA , Av = 7 V 5 15 30 5 15 30 45 60 80 120 mA A A A A A A Gate trigger current IGTF A-2 A B VAR =7V 45 60 80 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b |O e e1 Symbol A A1 b c D D1 E e e1 L O Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 C |
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