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| PHX18NQ20T N-channel enhancement mode field-effect transistor Rev. 01 -- 28 August 2000 M3D308 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHX18NQ20T in SOT186A. 2. Features s s s s s TrenchMOSTM technology Low on-state resistance Fast switching Low thermal resistance Isolated tab. 3. Applications c c s s s s Off-line switched mode power supplies Television and computer monitor power supplies DC to DC converters Motor control circuits 4. Pinning information Table 1: Pin 1 2 3 Tab Pinning - SOT186A, simplified outline and symbol Description gate (g) isolated tab d Simplified outline Symbol drain (d) source (s) isolated 03ab49 g 123 s 03ab30 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PHX18NQ20T N-channel FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 C Ths = 25 C; VGS = 10 V Ths = 25 C VGS = 10 V; ID = 8 A; Tj = 25 oC Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ - - - - 130 - Max 200 8.2 30 150 180 450 Unit V A W C m m VGS = 10 V; ID = 8 A; Tj = 150 C 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Ths = 25 C; VGS = 10 V; Figure 2 and 3 Ths = 100 C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current Tamb = 25 C Tamb = 25 C; pulsed; tp 10 s Ths = 25 C; pulsed; tp 10 s; Figure 3 Ths = 25 C; Figure 1 Conditions Tj = 25 to 150 C Tj = 25 to 150 C; RGS = 20 k Min - - - - - - - -55 -55 - - Max 200 200 20 8.2 5.2 33 30 +150 +150 8.2 33 Unit V V V A A A W C C A A Source-drain diode 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 2 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 120 03aa11 03aa19 120 I Pder 100 (%) 80 der 100 (%) 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 Tmb (oC) 0 0 25 50 75 100 125 150 175 o Tamb ( C) P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 4.5 V ID I der = ------------------ x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of ambient temperature. 102 ID (A) 10 RDSon = VDS / ID Fig 2. Normalized continuous drain current as a function of ambient temperature. 03ac74 tp = 10s 100s 1 ms 1 P = tp T 10 ms D.C. 100 ms tp T t 10-1 1 10 102 VDS (V) 103 Tamb = 25 C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 3 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 7. Thermal characteristics Table 4: Symbol Rth(j-hs) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to heatsink thermal resistance from junction to ambient vertical in still air; lead length 5 mm; Figure 4 Conditions Value 4.17 55 Unit K/W K/W 7.1 Transient thermal impedance 03ac73 10 Zth(j-a) (K/W) 1 = 0.5 0.2 0.1 0.05 10-1 0.02 P = tp T 10-2 single pulse tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 4 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain-source leakage current VDS = 200 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 10 V; VDS = 0 V VGS = 10 V; ID = 8 A; Figure 7 and 8 Tj = 25 C Tj = 150 C Dynamic characteristics gfs Ciss Coss Crss Qg(tot) Qgs Qgd ton toff forward transconductance input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain (Miller) charge turn-on time turn-off time VDD = 100 V; RD = 5.6 ; VGS = 10 V; RG = 5.6 ; Resistive load IS = 16 A; VGS = 0 V; Figure 13 IS = 16 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V ID = 18 A; VDD = 160 V; VGS = 10 V; Figure 14 VDS = 25 V; I = 8 A; Figure 11 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - - - - - - - - - 15 1850 170 91 40 9 22 3 92 - - _ _ - - - _ _ S pF pF pF nC nC nC ns ns - - 130 - 180 450 m m - - - 0.05 - 10 10 100 100 A A nA 2 1.2 - 3 - - 4 - 6 V V V 200 178 - - - - V V Min Typ Max Unit Static characteristics Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge - - - 0.9 130 0.8 1.2 - - V ns C 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 5 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 20 ID 18 (A) 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 Tj = 25 oC VGS = 10V 8V 03ac75 20 6V 18 ID (A) 16 14 12 10 8 5V 6 4 4.5 V 2 0 1.2 1.4 1.6 1.8 VDS (V) 2 0 1 2 3 4 150 oC VDS > ID X RDSon 03ac82 5.5 V Tj = 25 oC 5 VGS (V) 6 Tj = 25 C Tj = 25 C and 150 C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa31 RDSon () 0.3 4.5 V 5V Tj = 25 oC 03ac80 a 0.25 0.2 0.15 0.1 0.05 0 5.5 V 8V 6V VGS = 10 V 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 140 180 Tj (oC) 0 2 4 6 8 10 12 14 16 18 20 ID (A) Tj = 25 C R DSon a = --------------------------R DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 6 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 5 VGS(th) (V) 03aa32 10-1 ID (A) 03aa35 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 140 Tj (oC) 180 min typ. max. 10-2 10-3 min 10-4 typ max 10-5 10-6 0 1 2 3 4 VGS (V) 5 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature. 25 VDS > ID X RDSon gfs 20 (S) 15 150 oC 10 03ac76 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 104 Tj = 25 oC Ciss, Coss, Crss (pF) 03ac78 Ciss 103 Coss 102 5 Crss 0 0 2 4 6 8 10 12 14 16 18 20 ID (A) 10 10-1 1 10 VDS (V) 102 Tj = 25 C and 150 C; VDS > ID x RDSon VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 7 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 20 IS (A) 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 VSD (V) o Tj = 25 C 18 VGS = 0 V 03ac77 o 150 C 15 14 VGS (V) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 03ac79 ID = 18 A Tj = 25 oC VDD = 40V VDD = 160V 1.2 5 10 15 20 25 30 35 40 45 50 55 60 QG (nC) Tj = 25 C and 150 C; VGS = 0 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 9. Isolation characteristics Table 6: Isolation characteristics Symbol Parameter Visol RMS isolation voltage from all three terminals to external heatsink. Capacitance from pin 2 (drain) to external heatsink. Conditions f = 50-60 Hz; sinusoidal waveform; RH 65%; clean and dust-free. Min. - Typ. - Max. 2500 Unit V Cisol - 10 - pF 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 8 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 10. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' SOT186A E P q D1 T A A1 D j L2 b1 L b2 L1 K Q 1 2 b e e1 3 wM c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 b2 1.4 1.2 c 0.7 0.4 D 15.8 15.2 D1 6.5 6.3 E 10.3 9.7 e 2.54 e1 5.08 j 2.7 2.3 K 0.6 0.4 L L1 L2 max. 3 (1) P 3.2 3.0 Q 2.6 2.3 q 3.0 2.6 T (2) w 0.4 14.4 3.30 13.5 2.79 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. 2. Both recesses are 2.5 x 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC 3-lead TO-220F EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 99-09-13 Fig 15. SOT186A. 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 9 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 11. Revision history Table 7: 01 Revision history CPCN Description Product specification. Rev Date 20000828 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 10 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 12. Data sheet status Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production [1] Please consult the most recently issued data sheet before initiating or completing a design. 13. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9397 750 07452 (c) Philips Electronics N.V. 2000 All rights reserved. Product specification Rev. 01 -- 28 August 2000 11 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 12 of 15 Philips Semiconductors PHX18NQ20T N-channel FET 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 13 of 15 Philips Semiconductors PHX18NQ20T N-channel FET Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: see Austria India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet: http://www.semiconductors.philips.com (SCA70) 9397 750 07452 (c) Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 01 -- 28 August 2000 14 of 15 Philips Semiconductors PHX18NQ20T N-channel FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Isolation characteristics . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Philips Electronics N.V. 2000. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 August 2000 Document order number: 9397 750 07452 |
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