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| Three Phase Rectifier Bridges Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 82/08 PSD 82/12 PSD 82/14 PSD 82/16 PSD 82/18 PSD 82 IdAVM = 88A VRRM = 800-1800 V Symbol IdAVM IFSM Test Conditions TC = 110C, module TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 88 750 820 670 740 2800 2800 2250 2250 -40 ... + 150 150 -40 ... + 125 2 A A A A A As 2 As As 2 As C C C V V Nm Nm g 2 o i dt 2 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s (M5) (M5) 2500 3000 5 15% 5 15% 160 Mounting torque Terminal connection torque typ. Symbol IR VF VTO rT RthJC RthJK dS dA a Test Conditions VR = VRRM VR = VRRM IF = 150 A TVJ = 25C TVJ = TVJM TVJ = 25C Characteristic Value 0.3 5 1.6 0.8 5 1.1 0.183 1.52 0.253 10.0 9.4 50 mA mA V V m K/W K/W K/W K/W mm mm m/s 2 For power-loss calculations only TVJ = TVJM per Diode; DC current per module per Diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration BEVO Halbleitertechnik GmbH D-91217 Hersbruck Phone: 09151/1516 Fax.: 09151/7700 PSD 82 200 IF(OV) -----IFSM [A] IFSM (A) TVJ=45C TVJ=150C 750 670 4 10 2 As 1.6 150 TVJ=45C 1.4 100 1.2 10 3 TVJ=150C 1 0 VRRM 50 I F 0.8 Tvj = 150C Tvj = 25C 0.5 1 1.5 VF [V] 2 1/2 VRRM 0.6 1 VRRM 0 10 0.4 10 0 10 1 t[ms] 10 2 10 3 2 1 2 4 t [ms] 6 10 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 oi dt versus time (1-10ms) per diode (or thyristor) 2 300 [W] 250 PSD 82 0.23 0.15 0.32 = RTHCA [K/W] 95 TC 100 105 110 100 [A] 80 DC sin.180 rec.120 rec.60 rec.30 200 0.48 115 60 120 150 125 0.82 130 40 100 50 PVTOT 0 20 IFAVM 40 DC sin.180 rec.120 rec.60 rec.30 60 80 0 [A] 135 20 IdAV 0 50 100 TC(C) 150 200 1.82 140 145 C 150 50 Tamb 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 2 K/W Z thJK 1.5 Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated |
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