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CGY 81
GaAs MMIC
l l l l l
Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package
CGY 81
CGY 81
Q627002G0078
MW 16
Maximum Ratings Characteristics Positive supply voltage Supply current Channel temperature Storage temperature Pulse peak power dissipation Total power dissipation (Ts 80 C) Ts: Temperature at soldering point Thermal Resistance Characteristics Channel-soldering point Symbol max. Value 11 Unit K/W Symbol VD max. Value 9 4 150 -55...+150 tbd Tbd Unit V A C C W W
ID TCh Tstg PPulse Ptot
RthChS
Siemens Aktiengesellschaft Semiconductor Group
1 1
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
Functional Block Diagram:
Vneg Vcon
VD1
Control Circuit
RF OUT
RF IN
Pin Configuration: Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Name VD Cell n. c. RF IN Cell RF IN n. c. Vneg Vcon n. c. n. c. n. c. n. c. RF out RF out RF out RF out n. c. n. c. RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage Negative voltage Control voltage Configuration Drain voltage preamplifier stage
Siemens Aktiengesellschaft Semiconductor Group
2 2
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
Electrical Characteristics (TA = 25C , ZS=ZL=50 Ohm, VD=3.5V, Idq=300mA, unless otherwise specified ) Characteristics Frequency range Duty cycle AMPS output power TDMA output power AMPS gain at max. output TDMA gain at max. output CDMA output power CDMA gain at max. output Power ramping characteristic Full output power Pinch off Adjacent Channel Power CDMA 900kHz offset 1.98 MHz offset Adjacent channel power TDMA adjacent alternate 2nd alternate AMPS efficiency TDMA DC to RF efficiency @Padj=-26dBc at max. output CDMA DC to RF efficiency @Padj=-42dBc at max. output at Pout=10 dBm ( Iq set to 100mA ) Receive band noise power density ( 869 to 894 MHz ) Drain supply voltage range Negative supply voltage range Standby current @Vcon=0V Quiescent current Current consumption at VContr Current consumption at VNEG Operating temperature range
Siemens Aktiengesellschaft Semiconductor Group
Symbol
min 824
typ
max 849 100
Unit MHz % dBm dBm dB dB dBm dB V
f tON/tOFF P P G G
P G Vcontr
31,5 30 24 27 28 28 2.5 0.5
Padj/Pmain -45 -54 Padj/Pmain -28 -45 -45 55
dBc @ 30kHz dBc @ 30kHz
PAE PAE
% %
40 PAE 35 8 PRX VD Vneg Ipwr dwn IQ IControl INEG
3 3
%
-137 2.7 -5.0 500 300 2 2 -30 +85 3.5 4.0 -7
dBm/Hz V V A mA mA mA C
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
Power on sequence: 1. connect negative voltage to PA 2. connect control voltage to PA 3. turn on Vd 4. turn on Pin To switch off the device please use reverse sequence. Application Circuit:
Vd
C2 100p L3 RFin
3p9 C1 33 nH
IC1
1 2 3 4 5 6 7 8 VD1 NC2 RFin NC4 Vneg Vcon NC7 NC8
NC16 NC15 VD2/RFout4 VD2/RFout3 VD2/RFout2 VD2/RFout1 NC10 NC9
8n2 C12
5p6 HQ
GND (backside MW16)
Vcon
C11
10n
10n
CGY81
C16
17
Vaux
C14
33n
10 uH
3k9
R1
L1
33n C15
3 1 BAS 40-04 2 V1
C13 CLK 1n0
V2
1n0 BC848B
Evaluation Board Parts List Part Type Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Position C1 C2, C7, C10 C3, C4, C5, C6 C8 C9 C11, C12 C13, C15 Description 3.9pF 0402 100pF 0402 1uF 1206 5.6pF 0603 HQ 10pF 0603 HQ 10 nF 0402 1 nF 0402
4 4
680R
R2
Manufacturer Siemens Siemens Siemens AVX AVX Siemens Siemens
10p HQ
16 15 14 13 12 11 10 9
L2
100p
1u0
1u0
1u0
1u0
C3
C5
C4
C6
C7
C10 RFout
C8 C9
100p
Part Number
06035J5R6GBT 06035J100GBT
Siemens Aktiengesellschaft Semiconductor Group
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
Part Type Capacitor Inductor Inductor Inductor Resistor Resistor Diode Transistor Substrate
Position C14, C16 L1 L2 L3 R1 R2 V1 V2
Description 33nF 0402 10uH 33nH Air Coil 8.2nH 0603 3.9k 0402 680 Ohm 0402 BAS40-04W BC848B FR4, h=0.2mm, r=4.5
Manufacturer Siemens Siemens H. David GmbH
Part Number
PN/BV 1250
Siemens Siemens Siemens
Evaluation Board:
Vd CGY 81 Cell Band PA
SIEMENS
L2
RFin
RFin
RFout
V2
V1
Vaux CLK
Vcon
CLK
Siemens Aktiengesellschaft Semiconductor Group
5 5
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
RFout
CGY 81
Typical Performance in AMPS Operation Mode
AMPS Mode: TG & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
AMPS Mode: PAE & Pout vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
900 750
60 50 40 TG [dB] 30 20 10 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 Pin [dBm] TG [dB] Id [mA]
35 30 Pout [dBm] 25 20 15 10 5 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 Pin [dBm]
70.00 60.00 50.00 40.00 30.00 Pout [dBm] 20.00 PAE [%] 10.00 0.00 PAE [%]
850
600 450 300 150 0 Id [mA]
AMPS Mode: Pout vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25C
AMPS Mode: PAE vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25C
34
58
33 Pout [dBm] 56 32 PAE [%] 54 31 52 3 3.2 3.4 Vd [V] 3.6 3.8 4 3 3.2 3.4 Vd [V] 3.6 3.8 4
30
AMPS Mode: Pout vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25C
33 32.8 32.6 32.4 32.2 32 31.8 31.6 31.4 31.2 31 820
58 57 56 PAE [%] 55 54 53 52 820
AMPS Mode: PAE vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25C
Pout [dBm]
825
830
835 f [MHz]
840
845
850
825
830
835 f [MHz]
840
845
Siemens Aktiengesellschaft Semiconductor Group
6 6
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
Typical Performance in CDMA Operation Mode:
CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
CDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
40 35 Pout [dBm], PAE [%] 30 25 20 15 10 5 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 Pin [dBm] Pout [dBm] PAE [%] Id [mA]
800 700 600 Id [mA] 500 400 300 200 100 0 ACPR [dBc]
70 60 50 40 30 20 10 0 14 16 18 20 22 Pout [dBm] 24 26 28 30 ACP885 [dBc] ACP1,98 [dBc] TG [dB]
30 29 28 27 26 25 24 23 TG [dB] 850
CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA
CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA
50 49 48 47 46 45 44 43 42 41 40 820
825
830
835 f [MHz]
840
845
850
60 59 58 57 56 55 54 53 52 51 50 820
ACPR [dBc]
ACPR [dBc]
825
830
835 f [MHz]
840
845
CDMA Mode: Gain vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA
CDMA Mode: PAE vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA
30 29 28 27 26 25 24 23 22 21 20 820
825
830
835 f [MHz]
840
845
850
40 39 38 37 36 35 34 33 32 31 30 820
PAE [%]
TG [dB]
825
830
835
f [MHz]
840
845
850
Siemens Aktiengesellschaft Semiconductor Group
7 7
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA
CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA
50 49 48 47 46 45 44 43 42 41 40 820
825
830
835 f [MHz]
840
845
850
60 59 58 57 56 55 54 53 52 51 50 820
ACPR [dBc]
ACPR [dBc]
825
830
835 f [MHz]
840
845
850
CDMA Mode: Gain vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA
CDMA Mode: PAE vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA
30 29 28 27 26 25 24 23 22 21 20 820
825
830
835
f [MHz]
840
845
850
40 39 38 37 36 35 34 33 32 31 30 820
PAE [%]
TG [dB]
825
830
835
f [MHz]
840
845
850
CDMA Mode: ACPR @885kHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA
CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA
50 49 48 47 46 45 44 43 42 41 40 820
825
830
835 f [MHz]
840
845
850
60 59 58 57 56 55 54 53 52 51 50 820
ACPR [dBc]
ACPR [dBc]
825
830
835 f [MHz]
840
845
850
Siemens Aktiengesellschaft Semiconductor Group
8 8
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
CDMA Mode: Gain vs. f Vd=4V, Pout=29,5dBm, Iq=300mA
CDMA Mode: PAE vs. f Vd=4V, Pout=29,5dBm, Iq=300mA
30 29 28 27 26 25 24 23 22 21 20 820
825
830
835
f [MHz]
840
845
850
40 39 38 37 36 35 34 33 32 31 30 820
PAE [%]
TG [dB]
825
830
835
f [MHz]
840
845
850
Typical Performance in TDMA Operation Mode
TDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C TDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
45 40 Pout [dBm], PAE [%] 35 30 25 20 15 10 5 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 Pin [dBm] Pout [dBm] PAE [%] Id [mA]
900 800 700 ACPR [dBc] 600 500 400 300 200 100 0 Id [mA]
80 70 60 50 40 30 20 10 0 14 16 18 20 22 24 26 28 30 Pout [dBm] Padj [dBc] Palt [dBc] TG [dB]
30 29 28 TG [dB]
850
27 26 25 24 23 22
TDMA Mode: Padj vs. f Vd=3,0V, Pout=29dBm, Iq=300mA
TDMA Mode: Palt vs. f Vd=3,0V, Pout=29dBm, Iq=300mA
35 34 33 32 31 30 29 28 27 26 25 820
825
830
835 f [MHz]
840
845
850
55 54 53 52 51 50 49 48 47 46 45 820
ACPR [dBc]
ACPR [dBc]
825
830
835 f [MHz]
840
845
Siemens Aktiengesellschaft Semiconductor Group
9 9
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
TDMA Mode: Gain vs. f Vd=3V, Pout=29dBm, Iq=300mA
TDMA Mode: PAE vs. f Vd=3V, Pout=29dBm, Iq=300mA
30 29 28 27 26 25 24 23 22 21 20 820
825
830
835
f [MHz]
840
845
850
45 44 43 42 41 40 39 38 37 36 35 820
PAE [%]
TG [dB]
825
830
835
f [MHz]
840
845
850
TDMA Mode: Padj vs. f Vd=3,5V, Pout=30dBm, Iq=300mA
TDMA Mode: Palt vs. f Vd=3,5V, Pout=30dBm, Iq=300mA
35 34 33 32 31 30 29 28 27 26 25 820
825
830
835 f [MHz]
840
845
850
55 54 53 52 51 50 49 48 47 46 45 820
ACPR [dBc]
ACPR [dBc]
825
830
835 f [MHz]
840
845
850
TDMA Mode: Gain vs. f Vd=3,5V, Pout=30dBm, Iq=300mA
TDMA Mode: PAE vs. f Vd=3,5V, Pout=30dBm, Iq=300mA
30 29 28 27 26 25 24 23 22 21 20 820
825
830
835
f [MHz]
840
845
850
45 44 43 42 41 40 39 38 37 36 35 820
PAE [%]
TG [dB]
825
830
835
f [MHz]
840
845
850
Siemens Aktiengesellschaft Semiconductor Group
10 10
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
TDMA Mode: Padj vs. f Vd=4V, Pout=31dBm, Iq=300mA
TDMA Mode: Palt vs. f Vd=4V, Pout=31dBm, Iq=300mA
35 34 33 32 31 30 29 28 27 26 25 820
825
830
835 f [MHz]
840
845
850
55 54 53 52 51 50 49 48 47 46 45 820
ACPR [dBc]
ACPR [dBc]
825
830
835 f [MHz]
840
845
850
TDMA Mode: Gain vs. f Vd=4V, Pout=31dBm, Iq=300mA
TDMA Mode: PAE vs. f Vd=4V, Pout=31dBm, Iq=300mA
30 29 28 27 26 25 24 23 22 21 20 820
825
830
835
f [MHz]
840
845
850
45 44 43 42 41 40 39 38 37 36 35 820
PAE [%]
TG [dB]
825
830
835
f [MHz]
840
845
850
Siemens Aktiengesellschaft Semiconductor Group
11 11
23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo
CGY 81
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstrae 73, D-81541 Munchen copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer.
Siemens Aktiengesellschaft Semiconductor Group 12 12 23.07.98 HL HF PE 1998-11-01 GaAs 1/Fo

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