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| BFP 194 PNP Silicon RF Transistor * For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 194 RKs Q62702-F1347 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 3 100 10 mW 700 150 - 65 ... + 150 - 65 ... + 150 105 C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 77 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFP 194 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 50 - V nA 100 A 1 15 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V Semiconductor Group 2 Dec-13-1996 BFP 194 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 3.5 5 1.4 0.3 4.4 - GHz pF 2 dB 2.8 4.7 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 9 3 12 7 - IC = 70 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFP 194 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.574 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 9.1007 0.841 1.7871 1.6 4.1356 17.699 53.11 0.71631 0.97481 0 3 V V fF ps V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 111.78 0.84785 92.296 0.75304 0.15908 0.84843 0.65766 0 0.40003 0 0 0.90755 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.66503 21.629 0.43618 fA - 0.012843 A 0.0078447 fA 0.061674 mA 0.10833 0.48212 0.10323 3585.6 0.75 1.11 300 V fF V eV K 0.010453 mA 0.063742 - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.84 0.65 0.31 0.14 0.07 0.42 145 19 281 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-13-1996 BFP 194 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 800 mW Ptot 600 500 TS 400 300 TA 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-13-1996 BFP 194 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 4.0 6.0 GHz pF 5.0 10V 8V Ccb 3.0 fT 4.5 4.0 2.5 3.5 2.0 3.0 2.5 1.5 2.0 5V 3V 2V 1V 0.7V 1.0 1.5 1.0 0.5 0.5 0.0 0 4 8 12 16 V VR 22 0.0 0 20 40 60 80 mA IC 120 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 14 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 8.0 10V 5V 6.0 3V 5.0 dB 5V 3V G 10 G 2V 8 1V 6 3.0 4 0.7V 2.0 2 4.0 2V 1V 1.0 0.0 0 20 40 60 80 mA IC 120 0 20 40 60 80 0.7V mA IC 120 0 Semiconductor Group 6 Dec-13-1996 BFP 194 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 14 dB 12 VCE = Parameter, f = 900MHz 40 IC=70mA 0.9GHz dBm 8V G 11 10 9 8 7 6 1.8GHz 0.9GHz IP3 30 2V 3V 25 1V 5 4 3 2 1 0 0 2 4 6 8 V 12 1.8GHz 20 15 10 0 20 40 60 80 V CE mA IC 110 Power Gain Gma, Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) VCE = Parameter 28 IC=70mA dB dB 24 IC=70mA G 22 S21 22 20 18 18 16 14 12 14 10 10 8 6 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 6 4 2 0 -2 0.0 1V 0.7V 2V 10V 2.0 GHz f 3.0 2 -2 0.0 0.5 1.0 1.5 Semiconductor Group 7 Dec-13-1996 |
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