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| MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE QM75TF-HB * * * * * IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 1020.3 6 14 6 14 6 17 7-M4 BuP BuP EuP BvP EvP BwP EwP 4-5.5 P BvP EvP BvN EvN U V BwP EwP BwN EwN 740.25 910.3 P BuN EuN BvN EvN BwNEwN 30 16.5 P P EuP BuN EuN 30 U N V W 43 N 12 N N W 24.5 22 20 20 22 2 6.5 17 800.25 11 27 Tab#110, t=0.5 8.1 30+1.5 - 0.2 29.5 LABEL 7 Note: All Transistor Units are 3-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 660 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=100mA -IC=75A (diode forward voltage) IC=75A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=75A, IB1=150mA, IB2=-1.5A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 75 2.5 3.0 1.8 -- 2.0 8.0 3.0 0.35 1.3 0.2 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25C 2 10 4 7 5 4 3 2 10 3 7 5 4 3 2 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 160 A IB=200m mA IB=100 120 DC CURRENT GAIN hFE 80 IB=50mA IB=20mA IB=10mA VCE=2.5V 40 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.0 2.4 2.8 3.2 3.6 VCE=2.5V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 10 0 7 5 4 3 2 10-1 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) VBE(sat) VCE(sat) SATURATION VOLTAGE IB=100mA Tj=25C Tj=125C 2 3 4 5 7 10 2 4.0 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 VCC=300V 7 IB1=150mA 5 IB2=-1.5A 4 3 2 ts 10 0 7 5 4 3 2 10-1 10 0 3 IC=75A IC=50A IC=30A 2 SWITCHING TIME ton, ts, tf (s) tf ton Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 1 0 10 -3 2 3 4 5 7 10 -22 3 4 5 710 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10-1 10 0 2 3 45 7 VCC=300V IB1=150mA IC=75A Tj=25C Tj=125C REVERSE BIAS SAFE OPERATING AREA 160 COLLECTOR CURRENT IC (A) ts, tf (s) 140 120 100 80 60 40 20 Tj=125C IB2=-2.0A SWITCHING TIME ts IB2=-3.5A tf 10 1 2 3 45 7 10 2 0 0 100 200 300 400 500 600 700 800 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 D DERATING FACTOR OF F. B. S. O. A. 100 90 COLLECTOR CURRENT IC (A) 100s DERATING FACTOR (%) tw=50s 10 C 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA m s 5 1m 00 s s 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 0.5 0.4 Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.3 0.2 0.1 0 10 -3 2 3 4 5 7 10 -22 3 4 5 710 -1 2 3 4 5 7 10 0 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 Tj=25C Tj=125C Irr Qrr 10 1 trr (s) FORWARD CURRENT IF (A) Feb.1999 10 2 10 0 10 0 7 trr 5 VCC=300V 3 IB1=150mA 2 IB2=-1.5A 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) |
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