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| RB425D Diodes Shottky barrier diode RB425D Application Low current rectification External dimensions (Unit : mm) Lead size figure (Unit : mm) 1.9 2.90.2 Each lead has same dimension 0.15 0.06 2.80.2 1.60.1 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.4 0.1 0.2 1.0MIN. (3) 0.95 00.1 0.30.6 0.8MIN. (2) (1) 0.95 1.90.2 0.80.1 1.10.2 0.01 SMD3 Structure Silicon epitaxial planar 0.95 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1 3.50.05 8.00.2 3.20.1 3.20.1 4.00.1 1.05MIN 00.5 5.50.2 3.20.1 1.350.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature (*1)Rating of per diode Electrical characteristics (Ta=25C) Parameter Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 100 1 125 -40 to +125 Unit V V mA A Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR1 Ct1 Min. - Typ. 6 Max. 0.55 0.34 30 - Unit V V A pF Conditions IF=100mA IF=10mA VR=10V VR=10V , f=1MHz Rev.A 2.4 0.05 0.1 1/3 RB425D Diodes Electrical characteristic curves (Ta=25C) 100 Ta=125 10000 Ta=125 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75 1 Ta=25 Ta=-25 0.1 Ta=75 100 10 1 Ta=-25 0.1 0.01 Ta=25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 35 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 470 310 30 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 460 FORWARD VOLTAGE:VF(mV) Ta=25 IF=100mA n=30pcs 300 290 280 270 AVE:281.5mV 260 Ta=25 IF=10mA n=30pcs 25 20 15 10 AVE:2.548uA 5 0 Ta=25 VR=10V n=10pcs 450 440 430 AVE:439.5mV 420 VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 10 9 20 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 8 7 6 5 4 3 2 1 0 AVE:6.09pF Ifsm 15 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns) Ta=25 f=1MHz VR=10V n=10pcs 30 25 20 15 10 5 AVE:6.20ns 0 IFSM DISRESION MAP trr DISPERSION MAP Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 5 AVE:5.50A 0 Ct DISPERSION MAP 15 15 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 10 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA IF=10mA 5 5 1ms time 300us 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 Rev.A 2/3 RB425D Diodes 0.1 Per chip 0.08 DC 0.07 Per chip 0.06 0.3 Per chip 0.25 0.2 0.15 D=1/2 0.1 0.05 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 Sin(180) 0A 0V DC Io t T VR D=t/T VR=15V Tj=125 D=1/2 0.06 Sin(180) REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.05 0.04 0.03 DC 0.02 0.01 Sin(180) D=1/2 0.04 0.02 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.2 0 0.3 Per chip 0.25 0.2 0.15 0.1 0.05 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) DC T D=1/2 0A 0V t Io VR D=t/T VR=15V Tj=125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Sin(180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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