View RB496EA_1300748.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RB496EA
Diodes
Schottky barrier diode
RB496EA
Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm)
0.8
2.90.1
Each lead has same 0.40.05 dimension
0.1
0.160.1 0.06
Features 1) Small mold type (TSMD5) 2) Low IR 3) High reliability
1.0 min.
(5)
(4)
0.45 0.35
2.80.2
0.2 0.1
0.7
0.35 0.45
1.6
00.1
0.95
(1) (2) 0.95 (3) 0.330.03 0.70.1 0.850.1 1.0Max 0.30.6
0.95 1.9
TSMD5
Structure Silicon epitaxial planer
0.95
1.90.2
Structure
ROHM : TSMD5 dot (year week factory) + day
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.550.05 0.30.1 1.750.1
3.50.05
3.20.08
8.00.2
3.20.08
4.00.1
1.10.1
00.5
5.50.2
3.20.08
1.10.08
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode
Electrical characteristic (Ta=25C)
Symbol VR Io IFSM Tj Tstg
Limits 20 1 10 125 -40 to +125
Unit V A A
Parameter Forward voltage Reverse current
Symbol VF1 VF2 IR
Min. -
Typ. -
Max. 0.35 0.40 500
Unit V V A
Conditions IF=0.5A IF=1A VR=10V
Rev.A
2.4
1/3
RB496EA
Diodes
Electrical characteristic curves
1000 Ta=75
FORWARD CURRENT:IF(mA)
100000 Ta=125
REVERSE CURRENT:IR(uA)
1000
f=1MHz
100
Ta=25 Ta=-25
Ta=75 1000 Ta=25 100 10 1 Ta=-25
10
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125
10000
100
1 0 200 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600
10 0 5 10 15 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 20 0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
420
FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV)
350
Ta=25 IF=1A n=30pcs
300
Ta=25 IF=0.5A n=30pcs
REVERSE CURRENT:IR(uA)
410 400 390 380
AVE:384.2mV
340 330 320 310 300
AVE:319.7mV
250 200 150 100 50
AVE:62.1uA
Ta=25 VR=10V n=30pcs
370
VF DISPERSION MAP
0
VF DISPERSION MAP IR DISPERSION MAP
300 290
CAPACITANCE BETWEEN TERMINALS:Ct(pF) PEAK SURGE FORWARD CURRENT:IFSM(A)
50 40 30 20 10 AVE:14.6A 0
Ct DISPERSION MAP IFSM DISRESION MAP Ifsm
30
PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc 8.3ms
280 270 260 250 240 230 220 210 200 AVE:270.5pF
Ta=25 f=1MHz VR=0V n=10pcs
25 20 15 10 5 0 1
Ifsm 8.3ms 8.3ms 1cyc
10
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
30
PEAK SURGE FORWARD CURRENT:IFSM(A)
1000
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Ifsm
1 Rth(j-a) Per chip 0.8
FORWARD POWER DISSIPATION:Pf(W)
D=1/2 DC
25 20 15 10 5 0 1
t
100
Rth(j-c)
Mounted on epoxy board IM=10mA IF=0.5A
0.6
Sin(180)
10
1ms time
0.4 0.2 0
300us
10 TIME:t(ms) IFSM-t CHARACTERISTICS
100
1 0.001
0.1
10
1000
TIME:t(s) Rth-t CHARACTERISTICS
0
0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
2
Rev.A
2/3
RB496EA
Diodes
1 Per chip
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
3 Per chip 2.5 2 DC 1.5 D=1/2 1 0.5 0 0 5 10 15 20 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Sin( 180) 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 T
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
3 0A 0V Io t VR D=t/T VR=10V Tj=125 Per chip 2.5 2 1.5 1 0.5 Sin(180) 0 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 125 DC D=1/2 0A 0V Io t T VR D=t/T VR=10V Tj=125
0.8
REVERSE POWER DISSIPATION:PR (W)
0.6 0.4 0.2 0 Sin(180)
DC
D=1/2
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

▲Up To Search▲

Price & Availability of RB496EA

	To Download RB496EA Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .