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RB751G-40
Diodes
Schottky barrier diode
RB751G-40
Applications General rectification External dimensions (Unit : mm)
0.60.05 0.130.03
Land size figure
0.5 0.5
Features 1) Small power mold type. (VMD2) 2) Low VF 3) High reliability
1.00.05
1.40.05
VMD2
Construction Silicon epitaxial planar
0.270.03
Structure
0.50.05
ROHM : VMD2 dot (year week factory)
Taping dimensions (Unit : mm)
0.180.05 40.1 20.05 1.5+0.1 0 1.750.1
3.50.05
1.110.05
2.10.1
0.5 0.760.1 40.1 20.05
0.4
8.00.3 0.1
1.2
0.3 0.650.05
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 30 30 200 125 -40 to +125 Unit V V mA mA
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Ct Min. Typ. 2 Max. 0.37 0.5 Unit V A pF Conditions IF=1mA VR=30V VR=1V , f=1MHz
Rev.B
1/3
RB751G-40
Diodes
Electrical characteristic curves
100 100000 Ta=75 Ta=125 1 0.1 0.01 0.001 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS Ta=25 Ta=-25 Ta=125 10 f=1MHz
FORWARD CURRENT:IF(mA)
Ta=75
1000 Ta=25 100 10 1 0 5 10 15 20 25 30 35 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 40 Ta=-25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10
0REVERSE CURRENT:IR(nA)
10000
1
0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
330
1000
10
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
320 310 300 290 AVE:304.2mV 280 VF DISPERSION MAP
700 600 500 400 300 200 100 0 AVE:111.0nA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=25 IF=1mA n=30pcs
900 800
Ta=25 VR=30V n=30pcs
9 8 7 6 5 4 3 2 1 0 AVE:1.81pF
Ta=25 f=1MHz VR=0V n=10pcs
IR DISPERSION MAP
Ct DISPERSION MAP
20
30
10
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
25 20 15 10 5 0
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 15
1cyc 8.3ms
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
8 6 4 2 0 1
Ifsm 8.3ms 8.3ms 1cyc
10 AVE:3.40A 5
AVE:11.7ns
0 IFSM DISRESION MAP
trr DISPERSION MAP
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
10
1000 Ifsm
0.05 Rth(j-a) 0.04
8
t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
FORWARD POWER DISSIPATION:Pf(W)
6
Rth(j-c) 100
Mounted on epoxy board IM=1mA IF=10mA
0.03 0.02 0.01
D=1/2 Sin(180)
DC
4
2
1ms
time
0 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100
10 0.001
300us
0 1000 0 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.05
10 TIME:t(s) Rth-t CHARACTERISTICS
0.1
Rev.B
2/3
RB751G-40
Diodes
0.003 0.1 0.1 0A 0V Io t T VR D=t/T VR=20V Tj=125 0.08 0.06 0.04 0.02 Sin(180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 0A 0V Io t T VR D=t/T VR=20V Tj=125
AVERAGE RECTIFI FORWARD CURRENT:Io(A)
0.002 DC Sin(180)
D=1/2
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.08 0.06 0.04 0.02 Sin(180) 0
REVERSE POWER DISSIPATION:PR (W)
DC D=1/2
DC D=1/2
0.001
0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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