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Preliminary 4 Typical Applications * CDMA PCS LNA * TDMA PCS LNA * W-CDMA/CDMA2000 LNA RF2364 3V PCS LOW NOISE AMPLIFIER * General Purpose Amplification * Commercial and Consumer Systems Product Description The RF2364 is a low noise amplifier with a high dynamic range designed for CDMA and TDMA PCS, as well as W-CDMA/CDMA2000 applications. The device functions as an outstanding front end low noise amplifier and the bias current can be set externally. The IC includes a power down feature used to completely turn-off the device and is featured in a standard SOT 5-lead plastic package. 1.60 + 0.01 0.400 1 4 GENERAL PURPOSE AMPLIFIERS 0.15 0.05 2.90 + 0.10 0.950 2.80 + 0.20 3 MAX 0 MIN 0.45 + 0.10 0.127 1.44 1.04 Dimensions in mm. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS u Package Style: SOT 5-Lead GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Low Noise and High Intercept Point * 18dB Gain * Power Down Control * Single 3.0V Power Supply * PCS and W-CDMA Band Operation * 1.8GHz to 2.5GHz Operation RF IN 1 5 RF OUT GND1 2 VPD 3 4 GND2 Ordering Information RF2364 RF2364 PCBA 3V PCS Low Noise Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A4 010501 4-209 RF2364 Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Storage Temperature Preliminary Rating -0.5 to +8.0 +10 -40 to +150 Unit VDC dBm C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Operating Range Overall Frequency Range Supply Voltage (VCC) Power Down Voltage (VPD) Current Consumption Power Down Current Operating Ambient Temperature Input Impedance Output Impedance Specification Min. Typ. Max. 1930 2.7 2.7 1990 3.3 2.9 0.9 23.5 10 +85 Unit MHz V V V mA A o Condition 4 GENERAL PURPOSE AMPLIFIERS 3.0 17.0 -40 50 50 For normal operation For power down operation VCC =3.0V, Values reflect ICC +IPD VCC =3.0V, VPD <0.9V C T=25oC Low Noise Amplifier Performance Power Gain Noise Figure Input IP3 Input VSWR Output VSWR Input P1dB 18 1.8 +5 21 dB dB dBm VCC =3.0V, ICC =17mA VCC =3.0V With external matching components. 2:1 2:1 -8.5 dBm 4-210 Rev A4 010501 Preliminary Pin 1 Function RF IN Description RF input pin. This pin is DC coupled and matched to 50. RF2364 Interface Schematic To Bias Circuit RF OUT RF IN 2 3 GND1 VPD 4 5 GND2 RF OUT Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Amplifier Output pin. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. This pin is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Rev A4 010501 4-211 GENERAL PURPOSE AMPLIFIERS Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. For low noise amplifier applications, this pin is used to control the bias current. See plots for bias current settings. An external resistor (R1) can be used to set the bias current for any VPD voltage (See Application Note). For driver amplifier applications, this is the Power Down pin for the IC. VPD =2.8V + 0.1V is required for proper operation. VPD< 0.9V turns off the Part. External RF bypassing is required. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Nominal current required for VPD =2.8V is 2.0mA typical and 3.0mA Max (@ VPD =2.9V). PD 4 RF2364 Application Notes Preliminary Power Down Pin Resistor The Power Down pin (pin 3) of the RF2364 3V Low Noise Amplifier should be maintained at 2.7V to 2.9V for proper operation. This voltage range ensures the correct bias current will be present at the Power Down pin of the device. However, an external series resistor may be used to allow various operating voltages at this pin (see R1 in Application Schematics). The required value for this resistor may be roughly calculated by using the operating input voltage to the Power Down pin, the desired voltage at the device, and the typical current consumption for the Power Down pin, along with Ohms law. For example, assume the design will supply 3.3V to the Power Down pin of the device, but the biasing circuitry internal to the RF2364 requires 2.8V, and the power down bias current is known to typically be 5.5mA, then the required value from R1 would be found from: 4 GENERAL PURPOSE AMPLIFIERS 3.3V - 2.8V ---------------------------- = 90.9 5.5mA 4-212 Rev A4 010501 Preliminary Application Schematic PCS Band VCC 10 nF RF2364 15 nF RF IN 1 5 4.7 nH RF OUT 1.5 pF 2 1.5 pF R1 VPD Optional See Application Notes 8.2 nH 3 10 nF 4 3.3 nH 4 GENERAL PURPOSE AMPLIFIERS 10 nF RF OUT 1 pF Application Schematic W-CDMA Band VCC 47 pF RF IN 1 5 4.7 nH 2 8.2 nH 3 Optional See Application Notes 10 nF 4 R1 VPD Rev A4 010501 4-213 RF2364 (Download Bill of Materials from www.rfmd.com.) P1 1 P1-2 2 GND VCC P2-2 P2 1 2 GND VPD VCC C2 10 nF C1 15 nF 1 5 C3 1.5 pF 2 L1 8.2 nH VPD C5 10 nF 2364400- Preliminary Evaluation Board Schematic - PCS Band 4 GENERAL PURPOSE AMPLIFIERS J1 RF IN 50 strip L2 4.7 nH C4 1.5 pF 50 strip J2 RF OUT 3 4 L3 3.3 nH 4-214 Rev A4 010501 Preliminary Evaluation Board Layout Board Size 1" x 1" Board Thickness 0.031"; Board Material FR-4 RF2364 4 GENERAL PURPOSE AMPLIFIERS Rev A4 010501 4-215 RF2364 Gain versus VCC VPD=2.8V, Frequency=1960MHz 19.00 6.50 18.50 6.00 18.00 5.50 17.50 Preliminary IIP3 versus VCC VPD=2.8V, Frequency=1960MHz Gain (dB) IIP3 (dBm) 5.00 17.00 16.50 4.50 4 GENERAL PURPOSE AMPLIFIERS 16.00 Gain, -30 15.50 Gain, 25 Gain, 85 15.00 2.7 2.8 2.9 3 3.1 3.2 3.3 4.00 IIP3, -30 3.50 IIP3, 25 IIP3, 85 3.00 2.7 2.8 2.9 3 3.1 3.2 3.3 VCC (V) VCC (V) Noise Figure versus VCC VPD=2.8V, Frequency=1960MHz 2.3 2.1 1.9 -7.90 -8.00 -8.10 -8.20 Input P1dB versus VCC VPD=2.8V, Frequency=1960MHz Input P1dB (dBm) 1.7 -8.30 -8.40 -8.50 -8.60 P1dB, -30 P1dB, 25 P1dB, 85 NF (dB) 1.5 1.3 1.1 0.9 0.7 0.5 2.7 2.8 2.9 3 3.1 3.2 3.3 NF, -30 NF, 25 NF, 85 -8.70 -8.80 -8.90 2.7 2.8 2.9 3 3.1 3.2 3.3 VCC (V) VCC (V) ICC versus VCC VPD=2.8V, Frequency=1960MHz 9.20 19.00 Gain versus VPD VCC=3.0V, Frequency=1960MHz 9.00 18.50 8.80 18.00 8.60 Gain (dB) ICC (mA) Icc, -30 8.40 Icc, 85 8.20 Icc, 25 17.50 Gain, -30 17.00 Gain, 25 Gain, 85 16.50 8.00 16.00 7.80 7.60 2.7 2.8 2.9 3 3.1 3.2 3.3 15.50 2.7 2.75 2.8 2.85 2.9 VCC (V) VPD (V) 4-216 Rev A4 010501 Preliminary IIP3 versus VPD VCC=3.0V, Frequency=1960MHz 6.00 5.80 5.60 5.40 1.80 2.00 2.20 RF2364 Noise Figure versus VPD VCC=3.0V, Frequency=1960MHz NF, -30 NF, 25 NF, 85 IIP3 (dBm) 5.20 5.00 4.80 4.60 4.40 4.20 4.00 2.7 2.75 2.8 2.85 2.9 IIP3, -30 IIP3, 25 IIP3, 85 1.00 2.7 2.75 2.8 2.85 1.20 1.40 NF (dB) 1.60 4 2.9 VPD (V) VPD (V) P1dB versus VPD VCC=3.0V, Frequency=1960MHz -7.40 -7.60 -7.80 -8.00 6.00 5.80 5.60 5.40 5.20 IPD versus VPD VCC=3.0V, Frequency=1960MHz Input P1dB (dBm) -8.20 -8.40 -8.60 -8.80 -9.00 -9.20 -9.40 2.7 2.75 2.8 2.85 2.9 P1dB, -30 P1dB, 25 P1dB, 85 IPD (mA) 5.00 4.80 4.60 Ipd, -30 4.40 4.20 4.00 2.7 2.75 2.8 2.85 2.9 Ipd, 25 Ipd, 85 VPD (V) VPD (V) Gain versus Frequency VCC=3.0V, VPD=2.8V 19.00 1.85 Input Impedance versus Frequency VCC=3.0V, VPD=2.8V 18.50 1.8 18.00 1.75 17.50 Gain, -30 17.00 Gain, 25 Gain, 85 16.50 Input VSWR Gain (dB) 1.7 S11, -30 1.65 S11, 25 S11, 85 1.6 16.00 1930 1940 1950 1960 1970 1980 1990 1.55 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) Frequency (MHz) Rev A4 010501 4-217 GENERAL PURPOSE AMPLIFIERS RF2364 Output Impedance versus Frequency VCC=3.0V, VPD=2.8V 1.55 Preliminary 1.5 S22, -30 Output VSWR 1.45 S22, 25 S22, 85 1.4 4 GENERAL PURPOSE AMPLIFIERS 1.35 1.3 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) 4-218 Rev A4 010501 |
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