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RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
Description
The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs MMIC amplifier utilizing Raytheon's advanced 0.15m gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. 32 dB small signal gain (typ.) 21 dBm saturated power out (typ.) Circuit contains individual source Vias Chip Size 2.79 mm x 1.63 mm
Features
Absolute Maximum Ratings
Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg ID PIN TC TStg Rjc
Value +6 -2 +8 360 +10 -30 to +85 -55 to +125 44
Unit Volts Volts Volts mA dBm C C C/W
Electrical Characteristics
(At 25C) 50 system, Vd=+5 V, Quiescent current (Idq)=250 mA
Parameter Frequency Range Gate Supply Voltage1(Vg) Gain Small Signal Gain Variation vs. Frequency Power Output at 1 dB Compression Power Output Saturated: (Pin=-5 dBm)
Min 23 27
Typ -0.4 32 +/-2 22 23
Max 28 36
Unit GHz V dB dB dBm dBm
Parameter Drain Current at Pin=-5 dBm Drain Current at P1 dB Compression Power Added Efficiency (PAE): at P1dB OIP3 Input Return Loss Output Return Loss
Min
Typ 250 270 10 29 10 8
Max
Unit mA mA % dBm dB dB
3 7
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mils gap between the chip and the substrate material.
Note: 1. Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 250 mA. Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised April 16, 2001 Page 1
Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
Figure 1 Functional Block Diagram
RF IN Drain Supply Vd MMIC Chip RF OUT
Ground (Back of Chip) Gate Supply Vg
Figure 2 Chip Layout and Bond Pad locations. Chip size is 2.79 mm x 1.63 mm x 50 m. Back of chip is RF and DC ground.
Dimensions in mm
0.115
1.303
2.614 1.629 1.452 1.028
0.843 0.658
0.177 0.0 0.0 0.115 Drain Supply (Vd= +5 V) 1.895 2.614 2.794
Figure 3 Recommended Application Schematic Circuit Diagram
Bond Wire Ls
10000pF
100pF
100pF 100pF
MMIC Chip
RF IN
RF OUT
Ground (Back of Chip) 100pF 100pF 100pF
Bond Wire Ls
10000pF
Gate Supply (Vg)
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 16, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
Figure 4 Recommended Assembly Diagram
Die-Attach 80Au/20Sn Vd (Positive) 10000pF 100pF 100pF 2 mil Gap
100pF Alumina 50-Ohm RF Input
Alumina 50-Ohm
RF Output
100pF 10000pF
100pF
100pF
Vg (Negative)
L< 0.015" (4 Places)
Note: Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Vd should biased from 1 supply as shown. Vg should be biased from 1 supply.
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +5 V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq=250 mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power. (ii) Turn down and off drain voltage (Vd). (iii) Turn down and off gate bias voltage (Vg). An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below.
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 16, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
Performance Data
25
RMDA25000 Power Out Vs. Power In Frequency = 26 GHz, Bias Vd=5 V, Id=250 mA, T=25 C
20
15 Pout (dBm)
10
5
0 -25 -20 -15 -10 -5 0 5
Input Power Drive (dBm)
RMDA25000 S21 Vs. Frequency Bias Vd=5 V, Id=250 mA, T=25 C 36
34
32 S21 Mag (dB)
30
28
26 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 16, 2001 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
Performance Data
0
RMDA25000 S11 Vs. Frequency Bias Vd=5 V, Id=250 mA, T=25 C
-5
-10 S11 Mag (dB)
-15
-20
-25 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
RMDA25000 S22 Vs. Frequency Bias Vd=5 V, Id=250 mA, T=25 C 0
-5
-10 S22 Mag (dB)
-15
-20
-25 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 16, 2001 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810
Worldwide Sales Representatives
ADVANCED INFORMATION
North America
D&L Technical Sales 6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. dlarizona@aol.com Hi-Peak Technical Sales P.O. Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi-peak.com
Spartech South 2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris jim@spartech-south.com
TEQ Sales, Inc. 920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper dculpepper@teqsales.com
Cantec Representatives 8 Strathearn Ave, No. 18 Brampton, Ontario Canada L6T 4L9 905-791-5922 fax: 905-791-7940 Dave Batten cantec-ott@cantec-o.net
Steward Technology 6990 Village Pkwy #206 Dublin, CA 94568 925-833-7978 fax: 925-560-6522 John Steward johnsteward1@msn.com
Europe
Sangus OY Lunkintie 21, 90460 Oulunsalo Finland 358-8-8251-100 fax: 358-8-8251-110 Juha Virtala juha.virtala@sangus.fi
Sangus AB Berghamnvagen 68 Box 5004 S-165 10 Hasselby Sweden Ronny Gustafson 468-0-380210 fax: 468-0-3720954
Globes Elektronik & Co. Klarastrabe 12 74072 Heilbronn Germany 49-7131-7810-0 fax: 49-7131-7810-20 Ulrich Blievernicht hfwelt@globes.de
MTI Engineering Ltd. Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg adi_p@mti-group.co.il
Sirces srl Via C. Boncompagni, 3B 20139 Milano Italy 3902-57404785 fax: 3902-57409243 Nicola Iacovino nicola.iacovino@sirces.it
Asia
ITX Corporation 2-5, Kasumigaseki 3-Chome Chiyoda-Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx-corp.co.jp Headquarters 6321 San Ignacio Drive San Jose, CA 95119 408-360-4073 fax: 408-281-8802 Art Herbig art.herbig@avnet.com
Sea Union 9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su murphy@seaunionweb.com.tw France 4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com Holland Chr. Huygensweg 17 2400 AJ ALPHEN AAN DEN RIJN The Netherlands 31 172 446060 fax: 33 172 443414 sales.nl@ bfioptilas.avnet.com Spain C/Isobel Colbrand, 6 - 4a 28050 Madrid Spain 34 913588611 fax: 34 913589271 sales.es@ bfioptilas.avnet.com
Worldwide Distribution
United Kingdom Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 Belgium and Luxembourg rfsales.uk@ bfioptilas.avnet.com Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 sales.be@bfioptilas.avnet.com
Sales Office Headquarters
United States (East Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com
United States (West Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com
Europe Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com
Asia Raytheon Room 601, Gook Je Ctr. Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com
Customer Support
www.raytheon.com/micro
978-684-8900
fax: 978-684-5452
customer_support@rrfc.raytheon.com
Characteristic performance data and specifications are subject to change without notice. Revised April 16, 2001 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810

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