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| RMPA5251 October 2004 RMPA5251 4.90-5.85 GHz InGaP HBT Linear Power Amplifier General Description The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. * 2.5% EVM at 18.0dBm modulated power out * 3.3V single positive supply operation * Adjustable bias current operation * Two power saving shutdown options (bias and logic control) * Integrated power detector with >18dB dynamic range * Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless package * Internally matched to 50 * Minimal external components * Optimized for use in IEEE 802.11a WLAN applications Device Features * 4.9 to 5.85 GHz Operation * 27dB small signal gain * 26dBm output power @ 1dB compression Electrical Characteristics1,3 802.11a OFDM Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency10 Supply Voltage Gain Total Current @ 18dBm POUT Total Current @ 19dBm POUT EVM @ 18dBm POUT2 EVM @ 19dBm POUT2 Detector Output @ 19dBm POUT Detector Threshold4 POUT Spectral Mask Compliance5, 6 Minimum 4.90 3.0 Typical 3.3 27 250 260 2.5 3.5 450 5.0 21.0 Maximum 5.35 3.6 Minimum 5.15 3.0 Typical 3.3 28 240 250 2.5 3.5 500 5.0 20.0 Maximum 5.85 3.6 Unit GHz V dB mA mA % % mV dBm dBm Electrical Characteristics1 Single Tone Parameter Frequency10 Supply Voltage Gain7 Total Quiescent Current7, 11 Minimum 4.90 3.0 Typical 3.3 27 140-220 Maximum 5.35 3.6 Minimum 5.15 3.0 Typical 3.3 27.5 140-220 Maximum 5.85 3.6 Unit GHz V dB mA Notes: 1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25C, PA is constantly biased, 50 system. 2. Percentage includes system noise floor of EVM=0.8%. 3. Not measured 100% in production. 4. POUT measured at PIN corresponding to power detection threshold. 5. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 6. PIN is adjusted to point where performance approaches spectral mask requirements. 7. 100% Production screened. 8. Bias Current is included in the total quiescent current. 9. VL is set to logic level for device off operation. 10. See Application information on Page 3. 11. See Data on Page 8. (c)2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Electrical Characteristics12 Single Tone (Continued) Parameter Bias Current at pin VM8 P1dB Compression7 Current @ P1dB Comp7 Standby Current9 Shutdown Current (VM=0V) Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold3, 4 Frequency 2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic Shutdown Control Pin (VL): Device Off Device On Logic Current Turn-on Time13 Turn-off Time Spurious (Stability)14 Minimum Typical 16 26 425 1.9 <1.0 12 10 2 7.0 4.90 -30 -35 0.0 2.4 10 <1 <1 -65 0.8 2.0 5.35 5.15 -30 -35 0.0 2.4 100 <1 <1 -65 0.8 Maximum Minimum Typical 16 26 425 1.9 <1.0 16 10 2 7.0 5.85 Maximum Unit mA dBm mA mA A dB dB V dBm GHz dBc dBc V V A S S dBc 2.0 Absolute Ratings15 Symbol VC1, VC2 IC1-IC3 Parameter Positive Supply Voltage Supply Current IC1 IC2 IC3 Voltage Mirror Logic Voltage RF Input Power Case Operating Temperature Storage Temperature Value 4.0 50 150 500 4 5 10 -40 to +85 -55 to +150 Units V mA mA mA V V dBm C C VM VL PIN TCASE TSTG Notes: 3. Not measured 100% in production. 4. POUT measured at PIN corresponding to power detection threshold. 5. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 6. PIN is adjusted to point where performance approaches spectral mask requirements. 7. 100% Production screened. 8. Bias Current is included in the total quiescent current. 9. VL is set to logic level for device off operation. 10. See Application information on Page 3. 11. See Data on Page 8. 12. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25C, PA is constantly biased, 50E system 13. Measured from Device On signal turn on, (Logic High) to the point where RF POUT stabilizes to 0.5dB. 14. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 15. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. (c)2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Functional Block Diagram P1 16 VM2 15 VC2 14 VC3 13 N/C 1 BIAS CONTROL VOLTAGE DETECTOR 12 DT2 VM1 2 11 DT1 VC1 3 OUTPUT MATCH 10 RF OUT RF IN 4 INPUT MATCH 9 N/C Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Description N/C VM1 VC1 RF IN N/C N/C VM3 N/C N/C RF OUT DT1 (Vdet) DT2 VC3 VC2 VM2 P1 (Logic) 5 N/C 6 N/C 7 VM3 8 N/C Application Information The RMPA5251 can be optimized to work over 2 frequency ranges, 4.9 to 5.35 GHz (Low Band) and 5.15 to 5.85 GHz (High Band). Using the 2 external component configurations described on the next page, the RMPA5251 can be optimized to give the best EVM, power and gain over a specified bandwidth. The data on sheets 7-9 shows the performance when the evaluation board is configured for either low or high band performance. (c)2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Evaluation Board Schematic 5251 YWWX Backside Ground Note: *C3 only used in Low Band Configuration All Mirrors and VC connections can be separate or connected to a common rail. Evaluation Board Bill of Materials RMPA5251 4.90 to 5.35 GHz Operation Eval Board BOM (Low Band) No. Ref 1 C1,C2 2 3 4 5 6 7 8 9 C3 C4 R1,R2 L1,L2,L3 B1 J1,J2 J3 A1 Value Unit Qty Size Description 10 F 2 0805 10F Capacitor 1 100 10K 10 pF pF nH 1 1 2 3 1 2 0603 1pF Capacitor 0402 100pF Capacitor 0402 10K Resistor Part No. Comments GRM21BR60J106KE01D Decoupling Capacitor Murata GRM39C0G010B100V Murata GRM1885C1H101JA01D Detector Capacitor IMS RCI-0402-1002J Detector Resistor Toko LLV1005FB10NJ RF Choke Crown Circuits G657432 Johnson 142-0701-841 Components Digikey S1322-12-ND Fairchild RMPA5251 MFG Murata 0402 10nH Inductor Fixture Board Jack End Launch SMA 11 Right Angle Single Header 1 Packaged MMIC (c)2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 RMPA5251 5.15 to 5.85 GHz Operation Eval Board BOM (High Band) No. Ref Value Unit Qty Size Description 1 C1,C2 10 F 2 0805 10 F Capacitor 2 3 4 5 6 7 8 9 C4 R1,R2 L1,L3 L2 B1 J1,J2 J3 A1 100 10K 10 15 pF nH nH 1 2 2 1 1 2 11 1 0402 0402 0402 0402 Comments Decoupling Capacitor 100 pF Capacitor Murata GRM1885C1H101JA01D Detector Capacitor 10 K Resistor IMS RCI-0402-1002J Detector Resistor 10 nH Inductor Toko LLV1005FB10NJ RF Choke 15 nH Inductor Toko LLV1005FB15NJ RF Choke Fixture Board Crown Circuits G657432 Jack End Launch Johnson 142-0701-841 SMA Components Right Angle Single Digikey S1322-12-ND Header Packaged MMIC Fairchild RMPA5251 MFG Murata Part No. GRM21BR60J106K Evaluation Board Layout VL * C1 L2 C3 L3 J1 R1 L1 C2 C4 A1 R2 J2 Not Used J3 = component Actual Board Size = 2.0" x 1.5" = Jumper/short connection * VL is labeled P1 on Eval Board Evaluation Board Operation Recommended turn-on sequence: 1) Connect RF ports J1, J2 to RF test equipment. 2) Connect common ground terminal to the Ground (GND) pin on the board. 3) Connect logic control pin VL to positive supply. 4) Connect terminals VC1, VC2 and VC3 together and connect to positive supply (VC). 5) Connect terminals VM1, VM2 and VM3 together and connect to positive supply (VM). 6) Connect voltmeter to Detector Output, pin DT1. 7) Connect pin DT2 to ground. 8) Apply high voltage of +2.4V to logic control pin VL. (On) 9) Apply positive voltage of 3.3V to VC1, VC2 and VC3 (first, second and third stage collector). 10) Apply positive voltage of 3.3V to VM1, VM2 and VM3 (bias networks)2. 11) At this point, you should expect to observe the following positive currents flowing into the pins: Pin VL VC (Total) VM (Total) (c)2004 Fairchild Semiconductor Corporation Current ~150 A ~184 mA ~16 mA RMPA5251 Rev. D RMPA5251 12) Apply input RF power to SMA connector pin RF IN. Currents on collector pins will vary depending on the input drive level. 13) Vary positive voltage VL from +2.4V to +0.5V to shut down the amplifier or alter the power level. Shut down current flow into the pins: Pin Current VL <1 nA VC (total) <1 nA VM (total) <1.9 mA Recommended turn-off sequence: Use reverse order described in the turn-on sequence above. Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design. 2. VM may be adjusted from +2.9 to +3.3V to adjust bias current operation. See Typical Characteristics. Package Outline Dimensions in inches [mm] 5251 YWWX Application Information Precautions to Avoid Permanent Device Damage: --Static Sensitivity: Follow ESD precautions to protect against ESD damage: * A properly grounded static-dissipative surface on which to place devices. * Static-dissipative floor or mat. * A properly grounded conductive wrist strap for each person to wear while handling devices. (c)2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Typical Characteristics (802.11a) RMPA5251 Comparison Low Band Vs. High Band Total Measured EVM Vs. Frequency Modulated Power Out =18 dBm 54 Mbps OFDM VC=VM=3.3V, ICQ=184mA, IMQ=16mA 5 32 30 Low Band Configuration RMPA5251 Gain Vs. Modulated Power Out (Low and High Band) QAM64 54 Mbps OFDM Modulation VC=VM=3.3V, ICQ=184mA, IMQ=16mA, T=25 oC 4 Total Measured EVM (%) 28 High Band Configuration 26 Gain (dB) High Band Configuration 10 nH on VC2 Replaced with 15 nH and 1 pF on VC2 removed 3 24 22 20 2 Low Band Configuration Low Band 18 16 14 High Band 1 Includes 0.8% System Level EVM 0 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) Frequency (GHz) Low Band Configuration RMPA5251 Total Measured EVM QAM64 54 Mbps OFDM Modulation VC=VM=3.3V, ICQ=184m A, IMQ=16m A, F=5.15- 5.35GHz, T=25oC 8 7.5 4.90 GHz 7 4.95 GHz 6.5 5.00 GHz 6 5.05 GHz 5.5 5 5.10 GHz 4.5 5.15 GHz 4 5.20 GHz 3.5 5.25 GHz 3 2.5 5.30 GHz 2 5.35 GHz 1.5 1 0.5 Includes 0.8% System Level EVM 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Modulated Power Out (dBm) High Band Configuration RMPA5251 Total Measured EVM QAM64 54 Mbps OFDM Modulation VC=VM=3.3V, ICQ=184m A, IMQ=16m A, F=5.15- 5.85GHz, T=25oC 8 7.5 5.15 GHz 7 5.25 GHz 6.5 6 5.35 GHz 5.5 5.45 GHz 5 5.55 GHz 4.5 4 5.65 GHz 3.5 5.75 GHz 3 5.85 GHz 2.5 2 1.5 1 0.5 0 4 5 6 7 8 Total Measured EVM (%) Total Measured EVM (%) Includes 0.8% System Level EVM 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Modulated Power Out (dBm) Low Band Configuration RMPA5251 Output Power for 3% Total Measured EVM 802.11a 54 Mbps Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (Low Band Config) 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 4.9 4.95 5 5.05 5.1 High Band Configuration RMPA5251 Output Power for 3% Total Measured EVM 802.11a 54 Mbps Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (High Band Config) 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 4.9 5 5.1 5.2 5.3 5.4 Total Channel Power (dBm) Total Channel Power (dBm) 18dBm 18dBm Includes 0.8% System Level EVM Includes 0.8% System Level EVM 5.15 5.2 5.25 5.3 5.35 5.5 5.6 5.7 5.8 5.9 Frequency (GHz) Frequency (GHz) Low Band Configuration RMPA5251 Spectral Plot Showing Compliance to 802.11a Spectral Mask Requirements @ 21.0 dBm Modulated Output Power 54Mbps OFDM Data, 16.7 MHz BW, 176S Burst, 100S Idle, Frequency = 5.25 GHz, VC = VM = 3.3V, ICQ = 184 mA, IMQ = 16 mA, T = 25C High Band Configuration RMPA5251 Spectral Plot Showing Compliance to 802.11a Spectral Mask Requirements @ 20.0 dBm Modulated Output Power 54Mbps OFDM Data, 16.7 MHz BW, 176S Burst, 100S Idle, Frequency = 5.5 GHz, VC = VM = 3.3V, ICQ = 184 mA, IMQ = 16 mA, T = 25C (c)2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Typical Characteristics (802.11a) (continued) Low Band Configuration RMPA5251 Detector Voltage 4.9 - 5.35 GHz OFDM 54 Mbps Modulation VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, T = 25C Low Band Configuration 4.90 GHz 4.95 GHz 5.00 GHz 5.05 GHz 5.10 GHz 5.15 GHz 5.20 GHz 5.25 GHz 5.30 GHz 5.35 GHz 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 High Band Configuration RMPA5251 Detector Voltage 5.15 - 5.85 GHz OFDM 54 Mbps Modulation VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, T = 25C High Band Configuration 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 4 Detector Voltage (mV) Detector Voltage (mV) 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Total Channel Power 16.7 MHz (dBm) 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Total Channel Power 16.7 MHz (dBm) Low Band Configuration RMPA5251 Performance vs. Change in Mirror Voltage (VM)* RMPA5251 Total Current vs. VM vs. Modulated Output Power VC = 3.3V, Frequency = 5.25 GHz, T = 25C, Low Band Configuration 280 VM 3.3V 260 3.2V 3.1V 240 3.0V 220 2.9V 200 180 160 140 120 100 3 5 7 9 11 13 15 17 19 Modulated Output Power (dBm) 3.0V 3.1V 3.2V 21 23 Gain and Total Quiescent Current vs. Mirror Voltage (VM) Frequency = 5.25 GHz, VC = 3.3V, T = 25C, Low Band Configuration 240 30 29 28 27 Gain (dB) 26 25 24 23 22 21 20 19 2.9 3.0 3.1 3.2 Mirror Voltage, VM (V) 3.3 Total Current Gain 230 220 210 200 190 180 170 160 150 140 130 Total Current (mA) Total Current (mA) VM: 2.9V 3.3V *Total current can be varied by resetting the quiescent current by means of adjusting the mirror voltage, VM. Low Band Configuration RMPA5251 Modulated Output Power (OFDM 54 Mbps) at 2% and 3% EVM vs. Mirror Voltage vs. Frequency, VC=3.3V, T=25C RMPA5251 Output Power for 2% EVM Increase for VM = 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation RMPA5251 Output Power for 3% EVM Increase for VM = 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation 3.3V 3.2V 20 20 19 Modul ted Output Power (dBm) a Modulated Output Power (dBm) 19 3.1V 3.0V 18 18 2.9V 17 3.3V 3.2V 17 16 3.1V 16 15 3.0V 15 Includes 0.8% System Level EVM 2.9V Includes 0.8% System Level EVM 14 5.15 5.2 5.25 Frequency (GHz) VM = 2.9 V Itotal = 142 mA VM = 3.1 V Itotal = 170 mA VM = 3.3 V Itotal = 200 mA VM = 3.0 V Itotal = 155 mA VM = 3.2 V Itotal = 185 mA 5.3 5.35 14 5.15 5.2 5.25 Frequency (GHz) 5.3 5.35 VM = 2.9 V Itotal = 142 mA VM = 3.1 V Itotal = 170 mA VM = 3.3 V Itotal = 200 mA VM = 3.0 V Itotal = 155 mA VM = 3.2 V Itotal = 185 mA (c)2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Typical Characteristics (Single Tone) (continued) Low Band Configuration RMPA5251 S-Parameters vs. Frequency VM = VC = 3.3V, IMQ = 16mA, ICQ = 184mA, Low Band Configuration 30 0 -2 S11 and S22 Mag (dB) -4 -6 -8 -10 -12 -14 -16 -18 -20 4.9 5.0 5.1 5.2 S11 5.3 5.4 5.5 5.6 Frequency (GHz) 5.7 5.8 5.9 S22 S21 27 24 S21 Mag (dB) 21 18 15 12 9 6 3 0 6.0 S11 and S22 Mag (dB) High Band Configuration RMPA5251 S-Parameters vs. Frequency VM = VC = 3.3V, IMQ = 16mA, ICQ = 184mA, High Band Configuration 0 30 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 Frequency (GHz) 5.7 5.8 5.9 6.0 S11 S21 S22 27 24 18 15 12 9 6 3 0 S21 Mag (dB) 21 Low Band Configuration RMPA5251 Typical Gain vs Single Tone Output Power VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 4.9 - 5.35 GHz Low Band Configuration 30 29 28 27 Gain (dB) High Band Configuration RMPA5251 Typical Gain vs Single Tone Output Power VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 5.2 - 5.8 GHz High Band Configuration 30 29 28 27 Gain (dB) 4.90 GHz 4.95 GHz 5.00 GHz 5.05 GHz 5.10 GHz 5.15 GHz 5.25 GHz 5.35 GHz 26 25 24 23 22 21 20 5.2 GHz 5.3 GHz 5.4 GHz 5.5 GHz 5.6 GHz 5.7 GHz 5.8 GHz 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power (dBm) 26 25 24 23 22 21 20 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power (dBm) Low Band Configuration RMPA5251 Typical Total Current vs. Single Tone Output Power VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 4.9 - 5.35 GHz Low Band Configuration 550 500 450 Total Current (mA) 400 350 300 250 200 150 100 6 7 8 9 10 1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power (dBm) 4.90 GHz 4.95 GHz 5.00 GHz 5.05 GHz 5.10 GHz 5.15 GHz 5.25 GHz 5.35 GHz High Band Configuration RMPA5251 Typical Total Current vs. Single Tone Output Power VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 5.2 - 5.8 GHz High Band Configuration 550 500 450 Total Current (mA) 400 350 300 250 200 150 100 6 7 8 9 10 1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power (dBm) 5.2 GHz 5.3 GHz 5.4 GHz 5.5 GHz 5.6 GHz 5.7 GHz 5.8 GHz High Band Configuration RMPA5251 Performance vs. Change in Collector Voltage (VC) RMPA5251 Single Tone Gain vs. VC vs. Frequency VM = 3.3V T=25C High Band Configuration 35 30 P1dB (dBm) 25 Gain (dB) 20 15 VC 10 5 3.0V 3.3V 3.6V RMPA5251 Single Tone P1dB vs. VC vs. Frequency VM = 3.3V T=25C High Band Configuration 28 27 26 25 24 23 22 21 20 VC 19 3.0V 18 3.3V 17 3.6V 16 15 4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 5.95 6.05 Frequency (GHz) 0 4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 5.95 6.05 Frequency (GHz) (c)2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13 |
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