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RMWP23001
June 2004
RMWP23001
21-24 GHz Power Amplifier MMIC
General Description
The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset. The RMWP23001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
Features
* 4mil substrate * Small-signal gain 22.5dB (typ.) * 1dB compressed Pout 23.5dBm (typ.) * Chip size 2.6mm x 1.2mm
Device
Absolute Ratings
Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 607 +8 -30 to +85 -55 to +125 36.5 Units V V V mA dBm C C C/W
(c)2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
RMWP23001
Electrical Characteristics (At 25C), 50 system, Vd = +4V, Quiescent Currrent Idq = 400mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -8dBm Gain Variation vs. Frequency Gain at 1dB Compression Power Output at 1dB Compression Power Output Saturated: Pin = +3dBm Drain Current at Pin = -8dBm Drain Current at 1dB Compression Drain Current at Saturated: Pin = +3dBm Power Added Efficiency (PAE): at P1dB Input Return Loss (Pin = -8dBm) Output Return Loss (Pin = -8dBm) OIP3 Noise Figure
Note: 1. Typical range of gate voltage is -0.7 to -0.05V to set Idq of 400mA.
Min 21 20
Typ -0.3 22.5 1.0 21.5 24 25 400 430 410 15 14 12 33 8
Max 24
22
Units GHz V dB dB dB dBm dBm mA mA mA % dB dB dBm dB
(c)2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
RMWP23001
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
DRAIN DRAIN SUPPLY SUPPLY Vd1 Vd2 DRAIN SUPPLY Vd3 DRAIN SUPPLY Vd4
MMIC CHIP
RF IN
RF OUT
GROUND (Back of the Chip)
GATE SUPPLY Vg
Note: 1. Typical range of gate voltage is -0.7 to -0.05V to set Idq of 400mA.
Figure 1. Functional Block Diagram
0.0
0.82
1.072
1.756
2.076
2.6
1.2
1.2
0.791 0.637 0.482 0.685 0.53 0.376
0.0 0.0 0.55 2.6
0.0
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 2.6mm x 1.2mm x 100m. Back of chip is RF and DC Ground)
(c)2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
RMWP23001
DRAIN SUPPLY Vd = +4V 1F
L 10,000pF
100pF
L
L
L
L 100pF
100pF L L
100pF L L
MMIC CHIP RF IN RF OUT
L GROUND (Back of Chip)
100pF
L = BOND WIRE INDUCTANCE
GATE SUPPLY Vg
Figure 3. Recommended Application Schematic Circuit Diagram
Vdd (POSITIVE)
10,000pF
1F
DIE-ATTACH 80Au/20Sn
100pF
100pF 100pF
100pF
5 MIL THICK ALUMINA 50
5 MIL THICK ALUMINA 50
RF INPUT RF OUTPUT
100pF
L < 0.015" (4 Places)
2 MIL GAP Vg (NEGATIVE) Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Figure 4. Recommended Assembly Diagram
(c)2004 Fairchild Semiconductor Corporation RMWP23001 Rev. C
RMWP23001
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +4V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 400mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg).
(c)2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
RMWP23001
Typical Characteristics
RMWP23001, 23 GHz Power Amplifier, Typical Performance, Vd = 4V, Idq = 370mA, Chip Bonded into 50 Test Fixture
40 20
30 S21 20
15
10
0
0
-10 S22 -20 S11 -30
-5
-10
-15
-40 0 10 20 30 40
-20
FREQUENCY (GHz)
RMWP23001, 23 GHz Power Amplifier, Typical Performance, On-Wafer Measurements, Vd = 4V, Idq = 400mA
25 Pout (GHz) 24 Gain (GHz) 23 23 24 21 22 25 30
GAIN (dB)
23 24 21 22 22
20
15
21
10
20 -15 -10 -5 0 5
5
INPUT POWER (dBm)
(c)2004 Fairchild Semiconductor Corporation
OUTPUT POWER (dBM)
RMWP23001 Rev. C
S11, S22 (dB)
10
5
S21 (dB)
RMWP23001
Typical Characteristics (Continued)
RMWP23001, 23 GHz Power Amplifier, Typical Performance, On-Wafer Measurements, Vd = 4V, Idq = 400mA and 435mA
26 P1dB (mA) 25 26
24
24
23
23
22
22
21 -435 20
21
20
19 Gain (mA) 18 18
-400
19
18 19 20 21 22 23 24 25
FREQUENCY (GHz)
RMWP23001, Typical Performance Variation with Temperature Vd = 4V, Idq = 400mA, Chip Bonded into 50 Test Fixture
26
25 -25C 24
SS GAIN (dB)
+30C (room) 23 +80C 22
21
20 20 21 22 23 24
FREQUENCY (GHz)
(c)2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
Pout AT 1dB COMPRESSION (dBm)
-400 -435
25
GAIN (dB)
RMWP23001
Typical Characteristics (Continued)
RMWP23001, Typical Performance Variation with Temperature Vd = 4V, Idq = 400mA, Chip Bonded into 50 Test Fixture
27
26
-25C 25
P1dB (dBm)
+30C (room) 24 +80C
23
22
21 20 21 22 23 24
FREQUENCY (GHz)
(c)2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

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