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| RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 Structure Silicon N-channel MOS FET External dimensions (Unit : mm) SOP8 5.0 0.4 (8) (5) 1.75 Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). 1pin mark (1) (4) 3.9 6.0 1.27 0.2 Applications Power switching , DC / DC converter , Inverter Each lead has same dimensions Packaging dimensions Package Code Basic ordering unit(pieces) Taping TB 2500 Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS 45 VGSS 20 ID 9.5 IDP *1 38 IS 1.6 ISP 38 *1 PD 2 *2 Tch 150 Tstg -55 to +150 Unit V V A A A A W o Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) 2 1 (2) (3) (4) (1) (2) (3) (4) 0.4Min. Total power dissipation Chanel temperature Range of Storage temperature *1 PW10Duty cycle1% *2 Mounted on a ceramic board (1) C o C 1 ESD Protection Diode. 2 Body Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. Thermal resistance Parameter Chanel to ambient * Mounted on a ceramic board Symbol Rth(ch-a) * Limits 62.5 Unit o C/W 1/4 RSS095N05 Transistor Electrical characteristics (Ta=25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. - 45 - 1.0 - - - 10.0 - - - - - - - - - - Typ. - - - - 11 14 15 - 1830 410 210 20 35 78 31 18.9 4.9 7.2 Max. 10 - 1 2.5 16 20 21 - - - - - - - - 26.5 - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 9.5A, VGS= 10V ID= 9.5A, VGS= 4.5V ID= 9.5A, VGS= 4V VDS= 10V, ID= 9.5A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 5.0A VGS= 10V RL=5 RG=10 VDD 25V VGS= 5V ID= 9.5A RL=2.6 RG=10 Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS= 9.5A, VGS=0V 2/4 RSS095N05 Transistor Electrical characteristic curves 10 VDS=10V pulsed Ta=125oC 75oC 25oC -25oC 1000 VGS=10V pulsed Ta=125oC 75oC 25oC -25oC 1000 VGS=4.5V pulsed Ta=125oC 75oC 25oC -25oC Static Drain-Source On-State Resistance RDS(on) [m] Static Drain-Source On-State Resistance RDS(on) [m] Drain Currnt : ID [A] 1 100 100 0.1 10 10 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 0.01 1 0.1 1 10 0.01 0.1 1 10 Gate-Source Voltage : VGS [V] Drain Current : ID [A] Drain Current : ID [A] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 1000 VGS=4V pulsed Ta=125 C 75oC 25oC -25oC o 100 90 Static Drain-Source On-State Resistance RDS(on) [m] Ta=25oC pulsed 10 VGS=0V pulsed Ta=125 C Source Current : Is [A] o Static Drain-Source On-State Resistance RDS(on) [m] 80 70 60 50 40 30 20 10 ID=5.0A ID=9.5A 100 1 75oC 25oC -25oC 10 0.1 1 0.01 0 0.1 1 10 0 3 6 9 12 15 0.01 0.0 0.3 0.6 0.9 1.2 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 Fig.6 Source-Current vs. Source-Drain Voltage 10000 Ciss Capacitance : C [pF] 1000 Switching Time : t [ns] k tf 1000 Coss RG=10 Pulsed Gate-Source Voltage : VGS [V] Ta=25oC VDD=25V VGS=10V 10 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 Ta=25oC VDD=25V ID=9.5A RG=10 Pulsed 100 td(off) td(on) 100 Ta=25oC f=1MHz VGS=0V Crss 10 tr 10 0.1 1 10 100 Drain-Source Voltage : VDS [V] 1 0.01 0.1 1 10 Drain Current : ID [A] Total Gate Charge : Qg [nC] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 RSS095N05 Transistor Measurement circuits Pulse Width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG (Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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