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| SB3H90 and SB3H100 New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 90 to 100V Forward Current 3.0A High Voltage Schottky Rectifier DO-201AD 1.0 (25.4) Min. 0.210 (5.3) 0.190 (4.8) Dia. Features * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss, high efficiency * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications * Guardring for overvoltage protection * High temperature soldering guaranteed: 250C/10 seconds at terminals 0.375 (9.5) 0.285 (7.2) Mechanical Data 1.0 (25.4) Min. 0.052 (1.32) 0.048 (1.22) Dia. Dimensions in inches and (millimeters) Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.04 oz., 1.12g Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Maximum repetitive peak reverse voltage Maximum working reverse voltage Maximum DC blocking voltage Maximum average forward rectified current at TL = 90C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse surge current at tp = 2.0s, 1KHZ Critical rate of rise of reverse voltage Maximum thermal resistance(2) Storage temperature range Maximum operating junction temperature Symbol VRRM VRWM VDC IF(AV) IFSM IRRM dv/dt RJA RJL TSTG TJ (TA = 25C unless otherwise noted) SB3H90 90 90 90 3.0 100 1.0 10,000 30 10 SB3H100 100 90 100 Unit V V V A A A V/s C/W C C -55 to +175 +175 Electrical Characteristics Maximum instantaneous forward voltage at: (1) Maximum DC reverse current at rated DC blocking voltage IF = 3.0A, TJ = 25C IF = 3.0A, TJ = 125C TJ = 25C TJ = 125C VF IR 0.80 0.65 20 4 V A mA Notes: (1) Pulse test: 300s pulse width, 1% duty cycle (2) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas Document Number 88720 1-Jul-02 www.vishay.com 1 SB3H90 and SB3H100 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 -- Forward Current Derating Curve Peak Forward Surge Current (A) 4.0 100 Fig. 2 -- Maximum Non-repetitive Peak Forward Surge Current TJ = TJ max. 8.3ms single half sine-wave (JEDEC Method) Average Forward Current (A) Resistive or Inductive Load 0.375" (9.5mm) lead length 3.0 80 60 2.0 40 1.0 20 0 0 25 50 75 100 125 150 175 10 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 3 -- Typical Instantaneous Forward Characteristics TJ = 175C 10 Fig. 4 -- Typical Reverse Characteristics Instantaneous Reverse Current (A) 1000 Instantaneous Forward Current (A) 100 100 TJ = 150C TJ = 125C TJ = 150C 1 10 TJ = 100C TJ = 125C 0.1 TJ = 100C TJ = 25C Pulse Width = 300 s 1% Duty Cycle 1 0.1 0.01 20 40 60 80 TJ = 25C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 -- Typical Junction Capacitance Transient Thermal Impedance (C/W) 1,000 100 Fig. 6 - Typical Transient Thermal Impedance Junction Capacitance (pF) TJ = 25C f = 1.0 MHz Vsig = 50mVp-p 10 100 1 10 0.1 1 10 100 0.1 0 0.1 1 10 100 Reverse Voltage (V) www.vishay.com 2 t, Pulse Duration (sec.) Document Number 88720 1-Jul-02 |
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