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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 4998, REV. -
SBF50P10-023L
RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL
FEATURES: * 100 Volt, 0.023 Ohm, 90A MOSFET (current limited to 50A by package) * Characterized for VGS of 4.5V for Logic Level Drive * Total Dose Characterized to 300 Krad * Single Event Effect Capability Characterized to 60 MeVcm2/mg LET * Isolated Hermetic Metal Package; Ultra Low RDS (on) * Ceramic Seals with Glidcop leads * Also available with glass seals and copper core alloy 52 leads
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID25 IDM TJ/TSTG PD RJC MIN. -55 TYP. MAX. 20 - 50 - 90 +150 225 0.55 UNITS Volts Amps Amps C Watts C/W
RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT PULSED DRAIN CURRENT OPERATING AND STORAGE TEMPERATURE TOTAL DEVICE DISSIPATION THERMAL RESISTANCE, JUNCTION TO CASE
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = - 250A STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = - 10V, ID = - 20A VGS = - 4.5V, ID = - 15A GATE THRESHOLD VOLTAGE VDS = VGS, ID = - 250A FORWARD TRANSCONDUCTANCE VDS = - 15V, ID = - 20A ZERO GATE VOLTAGE DRAIN CURRENT VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25C TJ = 125C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TURN ON DELAY TIME VDD = - 50V RISE TIME ID = - 50A TURN OFF DELAY TIME VGS= - 10V FALL TIME RG = 1 DIODE FORWARD VOLTAGE IF = - 20A, VGS = 0V Pulse test, t 300 s, duty cycle d 2 % REVERSE RECOVERY TIME TJ = 25C, IF= - 20A, VR = - 50V di/dt = - 100A/sec INPUT CAPACITANCE VGS = 0 V, OUTPUT CAPACITANCE VDS = - 50 V, REVERSE TRANSFER CAPACITANCE f = 1.0MHz SYMBOL BVDSS RDS(ON) VGS(th) gfs IDSS IGSS td(ON) tr td(OFF) tf VSD trr Ciss Coss Crss MIN. -100 -1 TYP. 0.019 0.021 80 20 510 145 870 - 1.0 80 11100 700 1700 MAX. 0.023 0.025 -3 -1 - 500 100 -100 30 855 220 1300 - 1.5 120 pF UNITS Volts Volts S(1/) A nA nsec
-
Volts nsec
*221 WEST INDUSTRY COURT * DEER PARK, NY 11729-4681 * PHONE (631) 586-7600 * FAX (631) 242-9798* * World Wide Web Site - www.sensitron.com * E-Mail Address - sales@sensitron.com *
SBF50P10-023L SENSITRON TECHNICAL DATA DATA SHEET 4998, REV. -
Post-Total Dose (up to TID ratings) Irradiation Data
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = -250A STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = -10V, ID = -20A VGS = - 4.5V, ID = - 15A GATE THRESHOLD VOLTAGE VDS = VGS, ID = -250A ZERO GATE VOLTAGE DRAIN CURRENT VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V DIODE FORWARD VOLTAGE IF = -20A, VGS = 0V Pulse test, t 300 s, duty cycle d 2 %
SYMBOL
BVDSS RDS(ON) VGS(th) IDSS IGSS VSD
MIN.
-100 -1 -
TYP.
0.019 0.021 - 1.0
MAX.
0.023 0.025 -3 -1 100 -100 -1.5
UNITS
Volts Volts A nA Volts
Single Event Effect Safe Operating Area
Ion Br I LET
(MeVcm /mg)
2
37.47 59.72
Energy (MeV) 278 320
Range (m) 36.1 31.1
VGS=0V -100 -100
VGS= 5V -100 -100
VDS (V) VGS= 10V -100 -100
VGS= 15V -100 -100
VGS= 20V -100 -100
SEE Safe Operation Area
-120 -100 -80
VDS (V) Br I
-60 -40 -20 0 0 5 10
VGS (V)
15
20
*221 WEST INDUSTRY COURT * DEER PARK, NY 11729-4681 * PHONE (631) 586-7600 * FAX (631) 242-9798* * World Wide Web Site - www.sensitron.com * E-Mail Address - sales@sensitron.com *
SBF50P10-023L SENSITRON TECHNICAL DATA DATA SHEET 4998, REV. MECHANICAL DIMENSIONS: in Inches / mm
TO-254CG (Modified)
PINOUT TABLE DEVICE TYPE P-CHANNEL MOSFET MODIFIED TO-254 PACKAGE
PIN-1 DRAIN
PIN-2 SOURCE
PIN-3 GATE
DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
*221 WEST INDUSTRY COURT * DEER PARK, NY 11729-4681 * PHONE (631) 586-7600 * FAX (631) 242-9798* * World Wide Web Site - www.sensitron.com * E-Mail Address - sales@sensitron.com *

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