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SemiWell Semiconductor
SFF840
N-Channel MOSFET
Features

RDS(on) (Max 0.85 )@VGS=10V Gate Charge (Typical 38nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)
Symbol
2. Drain
1. Gate

3. Source
General Description
This Power MOSFET is produced using Semiwell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
TO-220F
1
2
3
Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25C) Continuous Drain Current(@TC = 100C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
500 8.0* 5.1* 32*
Units
V A A A V mJ mJ V/ns W W/C C C
25
320 13.4 5.5 44 0.35 - 55 ~ 150 300
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
-
Max.
2.86 62.5
Units
C/W C/W
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 500 ------0.50 ------1 10 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.0 A VDS = 40 V, ID = 4.0 A
(Note 4)
2.0 ---
-0.70 7.0
4.0 0.85 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1570 150 15 2040 195 20 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 8.0A, VGS = 10 V
(Note 4, 5)
VDD = 250V, ID = 8.0 A, RG = 25
(Note 4, 5)
--------
25 75 125 75 38 8 13
60 160 260 160 50 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 8.0 A, dIF / dt = 100 A/s
(Note 4)
------
---270 1.89
8.0 32 1.5 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
1
150 C
10
0
o
10
0
25 C -55 C
o
o
Notes : 1. 250s Pulse Test 2. TC = 25
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.0
RDS(ON) [ ], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
2.5
10
1
VGS = 10V
2.0
VGS = 20V
1.5
10
0
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
1.0
Note : TJ = 25
0.5
0
5
10
15
20
25
30
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VGS, Gate-Source Voltage [V]
10
VDS = 100V VDS = 250V
2000
Ciss
Capacitance [pF]
8
VDS = 400V
1500
6
1000
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
500
Crss
0 -1 10
2
Note : ID = 8 A
0
10
0
10
1
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 4.0 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
10
10
2
Operation in This Area is Limited by R DS(on)
8
ID, Drain Current [A]
10
1
ID, Drain Current [A]
100 s 1 ms 10 ms DC
10 s
6
10
0
4
10
-1
Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
0
2
10
-2
10
10
1
10
2
10
3
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
10
0
Z JC(t), Thermal Response
D = 0 .5 0 .2
10
-1
N o te s : 1 . Z J C (t) = 0 .9 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
Gate Charge Test Circuit & Waveform
5K 0 1V 2 20F 0n 30F 0n
Sm Tp a e ye a DT sU VS D
VS G 1V 0 Q g s Q g
VS G
Q g d
DT U
3A m
Cag hr e
Resistive Switching Test Circuit & Waveforms
V D S R G V G S
R L V D D
V D S
9 0 %
1 0 V
D U T
V G S
1 0 %
t(n d) o
t r tn o
t(f) df o tf o f
t f
Unclamped Inductive Switching Test Circuit & Waveforms
L V D S I D R G 1 0 V
tp
BS VS D 1 -- I 2 ---------E =-- L S ---------A S A 2 B S -V VS D D D BS VS D IS A V D D I () t D V D D
tp
D U T
V () Dt S Te i m
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v /d t c o n tr o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v /d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lta g e D r o p
Package Dimensions
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
9.75 0.30
MAX1.47 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
15.87 0.20

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