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| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT3906A2 Series Dual Microminiature Package 800 mA 75 Volts Dual PNP Transistor Features: * * * * * * High Speed Switching Transistor Multiple Devices Reduce Board Space High Power Dissipation: Up to 600 mW / device Replacement for 2N3904AU TX, TXV, S-Level screening available NPN complimentary parts available (SFT3904A2) DESIGNER'S DATA SHEET Part Number / Ordering Information 1/ SFT3906A2 __ __ Screening 2/ __ = Commercial TX = TX Level TXV = TXV Level S = S Level Package GW = Gullwing Maximum Ratings Symbol Value Units Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Continues Collector Current Power Dissipation @ TC = 25C Operating & Storage Temperature VCEO VCBO VCBO IC PD Top & Tstg ReJC 40 40 6 200 600 -65 to +200 0.29 Volts Volts Volts mAmps mW C C/mW Maximum Thermal Resistance (Junction to Case) Gullwing (GW) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0038 A Doc Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT3906A2 Series Symbol Min Max Units Electrical Characteristic 4/ Collector - Emitter Sustaining Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Forward Current Transfer Ratio * IC = 1 mA IC = 10 A IC = 10 A Vce = -30 V, Vbe = 3.0 V Vcb = -30 V Veb = -3.0 V VCE = -1.0V, IC = 0.1 mA VCE = -1.0V, IC = 1.0 mA VCE = -1.0V, IC = 10 mA VCE = -1.0V, IC = 50 mA VCE = -1.0V, IC = 100 mA BVCEO BVCBO BVEBO ICEX ICBO IEBO -40 -40 -5 -- -- -- 60 80 100 60 30 -- -- -0.65 -- 250 -- -- -- -- -- -- 100 -- -- -- -- 50 50 50 -- -- 300 -- -- -0.25 -0.40 -0.85 -0.95 -- 4.5 10 35 35 225 75 400 4.0 Volts Volts Volts nA nA nA HFE Collector - Emitter Saturation Voltage * Base - Emitter Saturation Voltage * Frequency Transition Output Capacitance Input Capacitance Turn-on Delay Time Rise Time Switch Times Storage Time Fall Time Small Signal Current Gain (f = 1 khz ) Noise Figure IC = 10mA, IB = 1.0mA VCE(Sat) IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA VBE(Sat) IC = 50mA, IB = 5.0mA VCE = -20V, IC = 20mA VCE = -10V, f = 1MHz VCE = -0.5V, f = 1MHz Vcc=-3V, IC = 10 mA IB1 = 1mA, IB2=-1mA Vbe(off) = 0.5 V VCE = -10V, IC = 1.0 mA fT cob cib td tr ts tf hfe NF Volts Volts MHz pF pF n sec Ic = 100 uA, Vce = -5 V, Rs = 1.0 kU, f = 1 khz db NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25C. PIN ASSIGNMENT Pin 2 Pin 3 Pin 4 Base1 Emitter1 Collector2 Available Part Numbers: SFT3906A2GW Package GW Pin 1 Collector1 Pin 5 Base2 Pin 6 Emitter2 |
Price & Availability of SFT3906A2GW
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