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Si4473DY
Vishay Siliconix
P-Channel 14-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-14
FEATURES
ID (A)
-13 -11
rDS(on) (W)
0.011 @ VGS = -4.5 V 0.016 @ VGS = -2.5 V
D TrenchFETr Power MOSFET
APPLICATION
D Battery Switch for Portable Equipment
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4473DY Si4473DY-T1 (with Tape and Reel) Si4473DY--E3 (Lead (Pb)-Free) Si4473DY-T1--E3 (Lead (Pb)-Free with Tape and Reel) 8 7 6 5 D D D D G
S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
-14 "12
Unit
V
-13 -10 -50 -2.7 3.0 1.9 -55 to 150
-9 -7 A
-1.36 1.5 0.95 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71613 S-50154--Rev. C, 31-Jan-05 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
33 70 16
Maximum
42 84 21
Unit
_C/W C/W
1
Si4473DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = -14 V, VGS = 0 V VDS = -14 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -13 A VGS = -2.5 V, ID = -11 A VDS = -17 V, ID = -13 A IS = -2.7 A, VGS = 0 V -30 0.0088 0.013 50 -0.65 -1.1 0.011 0.016 -0.6 1.5 "100 -1 -10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -2.1 A, di/dt = 100 A/ms VDD = -15 V, RL = 10 W 15 ID ^ -1 A, VGEN = -4.5 V, Rg = 6 W 1.5 VDS = -10 V, VGS = -4.5 V, ID = -13 A 46 9 13.2 3.2 35 45 160 140 55 5.3 55 70 240 210 80 ns W 70 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 5 thru 2.5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 TC = -55_C 25_C 125_C
Transfer Characteristics
30
2V
30
20
20
10
1.5 V
10
0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V) Document Number: 71613 S-50154--Rev. C, 31-Jan-05
2
Si4473DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030 r DS(on) - On-Resistance ( W ) 8000
Capacitance
C - Capacitance (pF)
0.024
6400
Ciss
0.018
VGS = 2.5 V
4800
0.012
VGS = 4.5 V
3200 Coss
0.006
1600 Crss
0.000 0 10 20 30 40 50
0 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 13 A 8 rDS(on) - On-Resiistance (Normalized) 1.4 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 13 A
6
1.2
4
1.0
2
0.8
0 0 20 40 60 80 100 Qg - Total Gate Charge (nC)
0.6 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.05
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) - On-Resistance ( W )
0.04 ID = 13 A 0.03
I S - Source Current (A)
0.02
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71613 S-50154--Rev. C, 31-Jan-05
www.vishay.com
3
Si4473DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 200
Single Pulse Power, Junction-to-Ambient
0.4 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2
160
120
0.0
80
-0.2
40
-0.4 -50
-25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (sec)
1
10
TJ - Temperature (_C) 2 1
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
2 Normalized Effective Transient Thermal Impedance 1
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71613. www.vishay.com Document Number: 71613 S-50154--Rev. C, 31-Jan-05
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