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| SI6875DQ New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET, Common Drain PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.027 @ VGS = -4.5 V -20 20 0.036 @ VGS = -2.5 V 0.052 @ VGS = -1.8 V ID (A) -6.4 -5.5 -4.6 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 SI6875DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs -20 "8 -6.4 -5.1 -30 -1.6 1.78 1.14 Steady State Unit V -5.2 -4.1 A -1.08 1.19 0.76 -55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71230 S-01235--Rev. A, 12-Jun-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 55 85 35 Maximum 70 105 45 Unit _C/W 2-1 SI6875DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -6.4 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -2.5 V, ID = -5.5 A VGS = -1.8 V, ID = -4.6 A Forward Transconductancea gfs VSD VDS = -5 V, ID = -6.4 A IS = -1.6 A, VGS = 0 V -20 0.022 0.029 0.042 19 -0.70 -1.1 0.027 0.036 0.052 W W S V -0.45 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.6 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W 10 V, ID ^ -1 A, VGEN = -4.5 V RG = 6 W 1A 4 5 V, VDS = -10 V VGS = -4.5 V, ID = -6.4 A 10 V, 45V 64 26 4.6 5.9 26 27 170 75 30 40 40 250 110 50 ns 36 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2.5 V 24 2V I D - Drain Current (A) 18 I D - Drain Current (A) 18 125_C 12 24 30 TC = -55_C 25_C Transfer Characteristics 12 1.5 V 6 0.5, 1 V 0 0 3 6 9 12 6 0 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 VGS - Gate-to-Source Voltage (V) Document Number: 71230 S-01235--Rev. A, 12-Jun-00 2-2 SI6875DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 4000 3500 C - Capacitance (pF) 0.08 VGS = 1.8 V 0.06 3000 2500 2000 1500 1000 0.02 VGS = 4.5 V 0 0 6 12 18 24 30 500 0 0 Crss 4 8 12 16 20 Coss Ciss Vishay Siliconix Capacitance 0.04 VGS = 2.5 V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 6.4 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.4 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 12 18 24 30 1.2 2 1.0 1 0.8 0 0 6 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.08 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.06 ID = 6.4 A 0.04 TJ = 25_C 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Document Number: 71230 S-01235--Rev. A, 12-Jun-00 www.vishay.com S FaxBack 408-970-5600 2-3 SI6875DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.5 0.4 80 V GS(th) Variance (V) 0.3 Power (W) ID = 250 mA 0.2 0.1 0.0 20 -0.1 -0.2 -50 0 0.001 60 100 Single Pulse Power, Junction-to-Ambient 40 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71230 S-01235--Rev. A, 12-Jun-00 |
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