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| SI6968DQ Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V ID (A) "6.5 "5.5 D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D S2 S2 G2 G1 G2 SI6968DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A, B 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)A, B Maximum Power DissipationA, B Dissi ation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IS PD TJ, Tstg LIMIT 20 "12 "6.4 "5.1 "30 1.5 1.5 0.96 -55 to 150 W _C A V UNIT THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-AmbientA Junction to Ambient t v 10 sec Steady State Notes A. Surface Mounted on FR4 Board. B. t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70757. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56943--Rev. E, 02-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL RthJA RthJA 85 TYPICAL MAXIMUM 83 UNIT _C/W 5-1 SI6968DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) PARAMETER STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-State Drain Source On State ResistanceA Forward TransconductanceA Diode Forward DYNAMICB Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.5 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 10 V, ID = 6.5 A 16 3.4 4.0 20 48 90 55 40 40 80 180 110 70 ns 30 nC VoltageA VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.5 A VDS = 10 V, ID = 6.5 A IS = 1.5 A, VGS = 0 V 30 0.017 0.022 30 0.66 1.2 0.022 0.030 W S V 0.6 "100 1 5 V nA mA A SYMBOL TEST CONDITION MIN TYP MAX UNIT Notes A. Pulse test; pulse width v 300 ms, duty cycle v 2%. B. Guaranteed by design, not subject to production testing. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56943--Rev. E, 02-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors 5-2 SI6968DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Output Characteristics 30 VGS = 5 thru 2.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 2V 18 12 12 TC = 125_C 6 25_C 0 -55_C 6 1.5 V 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On Resistance vs. Drain Current 0.04 3000 Capacitance r DS(on) - On-Resistance ( W ) 2500 C - Capacitance (pF) 0.03 VGS = 2.5 V VGS = 4.5 V 2000 Ciss 0.02 1500 1000 Coss 500 Crss 0.01 0 0 6 12 18 24 30 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 4.5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 6.5 A Gate Charge 1.8 1.6 r DS(on) - On-Resistance (W) (Normalized) 1.4 1.2 1.0 0.8 0.6 On Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.5 A 3.6 2.7 1.8 0.9 0 0 4 8 12 16 0.4 -50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56943--Rev. E, 02-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors 5-3 SI6968DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source Drain Diode Forward Voltage 20 0.08 On Resistance vs. Gate to Source Voltage I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( W ) 10 0.06 0.04 TJ = 25_C 0.02 ID = 6.5 A 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 30 25 Single Pulse Power 20 -0.0 Power (W) 15 -0.2 10 -0.4 5 -0.6 -50 0 0 50 TJ - Temperature (_C) 100 150 0.01 0.1 Time (sec) 1 10 30 Normalized Thermal Transient Impedance, Junction to Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56943--Rev. E, 02-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors 5-4 |
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