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| SK 50 GB 067 Absolute Maximum Ratings Symbol Conditions IGBT Values Units Inverse / Freewheeling diode SEMITOP(R) 3 IGBT Module SK 50 GAL 067 SK 50 GAR 067 SK 50 GB 067 Target Data Characteristics Symbol Conditions IGBT min. typ. max. Units Features Inverse / Freewheeling diode Typical Applications Mechanical data GB GAL GAR 1 02-11-2005 RAM (c) by SEMIKRON SK 50 GB 067 Fig.5 Typ. output characteristic, tp = 250 s, 25 C Fig.6 Typ. output characteristic, tp = 25 s, 125 C Fig.7 Turn-on / -off energy = f (IC) Fig.8 Turn-on / -off energy = f (RG) Fig.9 Typ. gate charge characteristic 2 02-11-2005 RAM (c) by SEMIKRON SK 50 GB 067 Fig.11 Typ. switching times vs. current Fig.12 Typ. switching times vs. gate resistor RG Fig. 14 Typ.Diode forward characteristic 3 02-11-2005 RAM (c) by SEMIKRON SK 50 GB 067 UL Recognized File no. E 63532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 02-11-2005 RAM (c) by SEMIKRON |
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