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| SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the SLD104U, this device attains even lower power consumption levels. Features * Low power consumption * Single power supply * Low noise * Microminiaturized package (5.6mm) Structure * AlGaAs double hetero-type laser diode * PIN photo diode for laser optical power output monitor Absolute Maximum Ratings (Tc = 25C) * Optical power output Po 5 mW * Reverse voltage VR LD 2 V PD 15 V * Operating temperature Topr -10 to +60 C * Storage temperature Tstg -40 to +85 C Connection Diagram COMMON Pin Configuration 3 PD 2 LD 1 2 1 3 1. LD anode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E89418B81-PS SLD104AU Electrical and Optical Characteristics (Tc = 25C) Item Threshold current Operating current Operating voltage Wavelength Monitor current Symbol Ith Iop Vop Im PO = 3mW PO = 3mW PO = 3mW PO = 3mW, VR = 5V 1.7 760 0.08 20 PO = 3mW 9 Condition Min. Typ. 45 52 1.9 780 0.15 32 17 Tc: Case temperature Max. 60 70 2.5 800 0.4 45 25 20 Unit mA mA V nm mA degree degree % m degree mW/mA m Perpendicular Radiation angle Parallel // (F. W. H. M.) Asymmetry SR 1 Positional accuracy Position Angle X, Y, Z D AS PO = 3mW PO = 3mW PO = 3mW | Z// - Z | fC = 7.5MHz f = 30kHz PO = 4mW VR = 5V VR = 5V, f = 1MHz 88 0.2 0.45 150 3 0.7 15 Differential efficiency Astigmatism Signal to noise ratio Dark current of PD Capacitance of PD S/N ID CT dB 150 30 nA pF F. W. H. M. : Full Width at Half Maximum 1 Power SR = SL SR // | SL - SR | SL + SR -7 0 7 -2- SLD104AU Example of Representative Characteristics Temperature characteristic of threshold current 100 Ith - Threshold current [mA] 1.0 Far field pattern (FFP) PO = 3mW 50 45 Radiant intensity (optional scale) 0.5 // 10 -10 0 25 50 100 TC - Case temperature [C] 0 -40 -20 0 Angle [degree] 20 40 PIN diode current-voltage characteristics I Tc = 25C PO = 3mW PO - Optical power output [mW] V 4 Tc = 25C Tc = 50C 3 0.25 [mA] Optical power output vs. Forward current characteristics 5 -1.0 0 1.0 [V] 2 1 -0.25 0 20 40 60 80 100 IF - Forward current [mA] Relative light intensity vs. Waveform characteristics PO = 3mW Relative light intensity vs. Wavelength characteristics PO = 5mW Relative light intensity 778 779 780 781 782 Relative light intensity 780 781 782 783 784 - Wavelength [nm] - Wavelength [nm] -3- SLD104AU Package Outline Unit: mm M-259 Reference Slot 1.0 0.5 3 90 2 1 Window Glass 0.8 0 5.6 - 0.05 4.4 MAX 3.8 MAX 0.6 0.5 MIN 0.4 0.2 5 30 1.26 2 3 1 3 - 0.45 PCD 2.0 Reference Plane LD Chip & Photo Diode Optical Distance = 1.35 0.15 SONY CODE EIAJ CODE JEDEC CODE M-259 6.5 1.2 0.1 3.1 MAX PACKAGE WEIGHT 0.3g -4- |
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