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| SML80B13F TO-247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) VDSS 800V ID(cont) 13A W RDS(on) 0.650W * * * * Faster Switching Lower Leakage 100% Avalanche Tested Popular TO-247 Package 2.21 (0.087) 2.59 (0.102) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) M ax. 5.25 (0.215) BSC Pin 1 - Gate Pin 2 - Drain Pin 3 - Source D G S StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Gate - Source Voltage Transient Total Power Dissipation @ Tcase = 25C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 800 13 52 30 40 280 2.24 -55 to 150 300 13 30 1210 V A A V W W/C C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25C, L = mH, RG = 25W, Peak IL = 13A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 11/99 SML80B13F STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250mA VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 13 0.65 Min. 800 Typ. Max. Unit V 25 1000 100 4 mA nA V A W DYNAMIC CHARACTERISTICS Characteristic Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6W Min. Typ. 3050 300 140 150 17 70 12 11 60 12 Max. Unit 3700 420 225 225 25 105 24 22 90 24 ns nC pF SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD dv / dt Characteristic Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Test Conditions (Body Diode) (Body Diode) IS ID [cont] Peak Diode Recovery TJ 150C trr Qrr Irrm Reverse Recovery Time VDD VDSS IS = - ID [Cont.] dI / dt = 100A/ms IS = - ID [Cont.] dl / dt = 100A/ms IS = - ID [Cont.] dl / dt = 100A/ms VGS = 0V , IS = - ID [Cont.] dI / dt = 100A/s VR = 200V RG = 2.0W TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 0.7 1.8 11 17 200 350 ns 5 V/ns Min. Typ. Max. Unit 13 A 52 1.3 V Reverse Recovery Charge mC A Peak Recovery Current Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 11/99 SML80B13F THERMAL CHARACTERISTICS RqJC RqJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Min. Typ. Max. Unit 0.45 C/W 40 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 11/99 |
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