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| Product Description Sirenza Microdevices' SNA-100S is a GaAs monolithic broadband amplifier (MMIC) in die form. This amplifier provides 12.2dB of gain at 1950 MHz and 10.3dB at 10,000 MHz. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Its small size (0.350mm x 0.345mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-100S is 100% DC tested and sample tested for RF performance. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. The SNA-100S is supplied in gel paks of 100 devices. Also available in packaged form (SNA-176 & SNA-186) Output Power vs. Frequency 13 12 SNA-100S DC-10 GHz, Cascadable GaAs HBT MMIC Amplifier Product Features * Cascadable 50 Ohm Gain Block * 12.2dB Gain, +11dBm P1dB * 1.5:1 Input and Output VSWR * Operates From Single Supply * Through wafer via for ground Applications * Broadband Driver Amplifier for Fiber & CATV transmitters * IF Amplifier or gain stage for VSAT, LMDS, WLAN, and Cellular Systems dBm 11 10 9 8 0.5 1 1.5 2 GHz 4 6 8 10 Symbol Parameter Units dB dB dB dB dB dB GHz dBm dBm dBm dBm dB dB dB V mA dB/C C/W Frequency 850 MHz 1950 MHz 2400 MHz 6000 MHz 10000 MHz 0.1-8 GHz 1950 MHz 10000 MHz 1950 MHz 10000 MHz 1950 MHz 1950 MHz 0.1-10 GHz M in. 10.7 T yp. 12.5 12.2 12.0 12.5 10.3 +/- 0.5 10.5 11.0 11.5 24.0 24.0 5 13 16 3.6 40 -0.0015 280 M ax. 13.7 Gp Small Signal Power Gain [2] 8.8 11.8 Gain Ripple GF BW 3dB 3dB Bandwidth P 1dB OIP 3 NF RL ISOL VD Output Power at 1dB Compression [2] Output Third Order Intercept Point [2] Noise Figure Input / Output Return Loss Reverse Isolation Device Operating Voltage [1] 9 9.5 21 21 3.1 35 4.1 45 Device Operating Current [1] ID dG/dT Device Gain Temperature Coefficient R TH , j-b Thermal Resistance (junction to backside) Test Conditions: VS = 8 V RBIAS = 110 Ohms ID = 40 mA Typ. OIP3 Tone Spacing = 1.2 MHz, Pout per tone = 0 dBm TL = 25C, ZS = ZL = 50 Ohms, [1] 100% DC Tested, [2] Sample Tested The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103299 Rev B Preliminary SNA-100S DC-10 GHz Cascadable MMIC Amplifier Typical Performance at 25 C (Vds =3.8V, Ids = 40mA) (data includes bond wires) |S11| vs. Frequency 25 0 20 -5 15 10 5 -15 0 -20 0.5 1 1.5 2 4 6 8 10 12 14 16 18 20 0.5 1 1.5 2 4 6 8 10 12 14 16 18 20 |S21| vs. Frequency dB -10 dB GHz GHz |S12| vs. Frequency 0 0 -5 |S22| vs. Frequency -5 dB -10 -15 dB -10 -15 -20 -25 -20 0.5 1 1.5 2 4 6 GHz 8 10 12 14 16 18 20 0.5 1 1.5 2 4 6 8 10 12 14 16 18 20 GHz Noise Figure vs. Frequency 8 26 TOIP vs. Frequency 7 25 dB 6 dBm 24 23 5 0.5 1 1.5 2 4 6 8 10 22 0.5 1 1.5 2 4 6 8 10 GHz GHz Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 90 mA 6V +20 dBm +200C -40C to +85C +150C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103299 Rev B Preliminary SNA-100S DC-10 GHz Cascadable MMIC Amplifier Typical Application Circuit RBIAS 1 uF 1000 pF Application Circuit Element Values Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 1 4 SNA-100 Recommended Bias Resistor Values for ID = 40mA 3 CB RF out RBIAS = (VS - VD) / ID Supply Voltage (VS) RBIAS 6V 60 8V 110 10V 160 12V 210 2 Note: RBIAS provides DC bias stability over temperature. GND VIA Die Thickness - 0.004 [0.1] Dimensions - inches [mm] RFIN RFOUT Suggested Bonding Arrangement (above configuration used for S-parameter data) Simplified Schematic of MMIC For recommended handling, die attach, and bonding methods, see the following application note at www.sirenza.com. AN-041 (PDF) Handling of Unpackaged Die Part Number Ordering Information Part Number Gel Pack 1 0 0 p cs. p e r p a ck Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. SNA-100S Die are shipped per Sirenza application note AN-039 Visual Criteria For Unpackaged Die 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103299 Rev B |
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