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| Semiconductor SPI5842 Photo Diode Features * Peak sensitivity wavelength matching with infrared LED(P=950nm) * 4.8mm x 5.5mm side view package * Black colored visible light cut-off lens Application * Infrared remote controllers for TVs, VCRs, Audio equipment etc Outline Dimensions unit : mm PIN Connections 1. Anode 2.Cathode KPE-0001-000 1 SPI5842 Absolute maximum ratings Characteristic Reverse Voltage Power Dissipation Operating Temperature Storage Temperature * Soldering Temperature 1 Symbol VR PD Topr Tstg Tsol Ratings 40 170 -20 -25 260 70 85 for 5 seconds Unit V mW *1.Keep the distance more than 2.0mm from PCB to the bottom of Photo Diode package Electrical Characteristics Characteristic * Short Circuit Current Dark Current Capacitance Spectral Sensitivity Peak Sensitivity Wavelength Half angle 1 P 1 Symbol ISC ID Ct Test Condition Ee=6mW/ VR=10V VR=10V, f=1MHz - Min. - Typ. 40 10 Max. 50 - Unit uA nA pF nm 840 ~ 1,050 940 55 - nm deg /2 *1. Ee : Irradiance by infrared LED light source(p=940nm) KPE-0001-000 2 Characteristic Diagrams Fig. 1 ISC - Ee Fig. 2 ID - Ta SPI5842 Short Current ISC [uA] Light Source [mW/ ] Dark Current ID [nA] Ambient Temperature Ta [ ] Fig. 3 Ct - VR Fig.4 ID - VR Reverse Voltage [v] Dark Current ID [nA] Capacitance [Pf] Reverse Voltage [v] Fig.5 Spectrum Sensitivity Fig. 5-1 Radiation Diagram Relative Intensity [%] Wavelength [nm] Relative Luminous Intensity Iv [%] KPE-0001-000 3 |
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