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  Datasheet File OCR Text:
 PRELIMINARY
SPMQ461-01
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET FEATURES: * High Current Switching for Motor Drives and Inverters for Space Applications. * Push-Pull Configuration with Freewheeling Diodes. * Low Saturation Voltage at High Currents. * Low Mechanical Stress Design. * Hermetic Sealed Construction for Aerospace Applications. * Excellent Thermal Management. * Full Power Screened Hermetic Discretes. * TX, TXV, and S-Level Screening Available. * Consult Factory for: * Faster Switching Speeds; * Other Bridge Configurations and Terminal Styles. MAXIMUM RATINGS CHARACTERISTIC
Collector to Emiter Voltage, per Leg Gate to Collector Voltage Continuous Collector Current, per Leg TB = 25 C TB = 90oC
o
200 AMP/600 VOLTS HALF BRIDGE IGBT POWER MODULE FOR SPACE APPLICATIONS
ASPM
SYMBOL VCES VGES I C1 I C2 I CM I LM EARV TOP & TSTG 1 JB P D1 P D2
VALUE 600 "20 200 100 300 100 5.6 -55 TO +150 0.28 625 5
UNIT Volts Volts Amps Amps Amps mJ
o o
Pulse Collector Current, per Leg 1/ Clamped Inductive Load Current, per Leg (TB = 125 EC, VCC = 480V, VGE = 15V, L = 30uH, RG = 10S Reverse Voltage Avalange Energy, per Leg 1/ (IC = 100A) Operating and Storage Temperature Thermal Resistance, Junction to Base, per Leg Total Module Dissipation, per Leg @TB = 25oC Dissipation Derating from TB = 25oC to TB = 150oC, per Leg 1/ Pulse Duration Limited by TJMAX; Repetative Rating
C
C/W W W/oC
ELECTRICAL SCHEMATIC
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0002B
PRELIMINARY
SPMQ461-01
14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773
SOLID STATE DEVICES, INC.
ELECTRICAL CHARACTERISTICS @ TJ =25oC, per Leg (Unless Otherwise Specified) RATING
Collector - Emitter Breakdown Voltage (ICES = 250:A, VGE = 0V) Gate - Emitter Threshold Voltage (IC = 5mA, VCE = VGE) Collector-Emitter Saturation Voltage (IC = 100A, VGE = 15V) Gate-Emitter Leakage Current (VGE = "20V, VCE = 0V) Collector Leakage Current (VCE = 480V, VGE = 0V) Anti-Parallel Diode Forward Voltage (IF = 100A, TB = 25oC) (TB = 25oC) (TB = 90oC)
SYMBOL MIN MAX UNIT
BVCES VGE(th) VCE(sat)2 VCE(sat)1 IGES (TB = 25oC) (TB = 125oC) ICES1 ICES1 VF RINSUL1
600 2.0 1
6 3.1 2.5 2.0 225 20 1.6 -
Volts Volts Volts :Amps :Amps mAmps Volts GS
Insulation Resistance (All terminals to Base @1500V)
PACKAGE OUTLINE: ASPM
Tolerances (Unless specified): .XX ".03 .XXX ".010


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