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 Preliminary data
SPP15P10P
SIPMOS Small-Signal-Transistor
Feature * P-Channel * Enhancement mode * Avalanche rated * dv/dt rated
Product Summary VDS RDS(on) ID -100 0.24 -15
P-TO220-3-1
V A
Drain pin 2
Type SPP15P10P
Package P-TO220-3-1
Ordering Code Q67042-S4166
Gate pin1 Source pin 3
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current
TC=25C TC=100C
Symbol ID
Value -15 -10.6
Unit A
Pulsed drain current
TC=25C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
-60 230 6 20 128 -55... +175 55/175/56 mJ kV/s V W C
Avalanche energy, single pulse
ID =-15 A , VDD =-25V, RGS=25
Reverse diode dv/dt
IS =-15A, VDS =-48V, di/dt=-200A/s, Tjmax =150C
Gate source voltage Power dissipation
TC=25C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-07-26
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
SPP15P10P
Symbol min. RthJC RthJA -
Values typ. max. 1.17 75 45
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0, ID=-250A
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) -100 -4
Values typ. -3 max. -2.1
Unit
V
Gate threshold voltage, VGS = VDS
ID =-1.54mA
Zero gate voltage drain current
VDS =-100V, VGS =0, Tj =25C VDS =-100V, VGS =0, Tj =150C
A -0.1 -10 -10 0.18 -1 -100 -100 0.24 nA
Gate-source leakage current
VGS =-20V, VDS =0
Drain-source on-state resistance
VGS =-10V, ID =-10.6A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2002-07-26
Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf
VDD =-50V, VGS =-10V, ID =-15A, RG =6 |VDS| 2*|ID |*RDS(on)max ID =-10.7A VGS =0, VDS =-25V, f=1MHz
SPP15P10P
Symbol
Conditions min. 4.7 -
Values typ. 9.3 944 226 91 8.9 30 35 22 max. 1180 283 114 13.4 45 53 33
Unit
S pF
ns
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr
VGS =0, |IF | = |IS | VR =-50V, |IF | = |IS |, diF /dt=100A/s
Qgs Qgd Qg
VDD =-80V, ID =-15A
-
-4.5 -15.3 -33.4 -5.7
-6.7 -23 -50 -
nC
VDD =-80V, ID =-15A, VGS =0 to -10V
V(plateau) VDD =-80V, ID =-15A
V
IS
TA=25C
-
-0.94 100 419
-15 -60
A
-1.35 V 150 628 ns nC
Page 3
2002-07-26
Preliminary data 1 Power dissipation Ptot = f (TC )
SPP15P10P
SPP15P10P
2 Drain current ID = f (TC ) parameter: |VGS | 10V
-16
SPP15P10P
3.6
W
A
2.8
-12
Ptot
ID
20 40 60 80 100 120 140 160 C 190
2.4 2
-10
-8 1.6 -6 1.2 0.8 0.4 0 0 -4
-2
0 0
20
40
60
80
100 120 140 160 C 190
TC
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C
-10
2 SPP15P10P tp = 18.0s
4 Max. transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T
10 1
SPP15P10P
K/W
A
10 0
Z thJC
ID
100 s
10 -1
-10 1 D = 0.50 10
/ ID
-2
0.20 0.10
1 ms
0.05 10 -3 0.02 single pulse 0.01
n)
=V
DS
RD
S(o
10 ms
-10 0 -1 -10
DC -10
0
-10
1
-10
2
V
-10
3
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2002-07-26
Preliminary data 5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25C, -VGS
40
SPP15P10P
6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS ; Tj =25C, -VGS
1
19.9V A 10V 8V 7V 32 6V 5.5V 28 5V 4.5V 24 4V
20 16 12 8 4 0 0
0.8
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
4V 4.5V 5V 5.5V 6V 7V 8V 10V 19.9V
1
2
3
4
5
6
V
RDS(on)
-I D
8
5
10
15
20
25
30
A
40
-VDS
-ID
7 Typ. transfer characteristics ID= f ( VGS ); |VDS | 2 x |ID | x RDS(on)max parameter: Tj = 25 C
A
30
8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25C
14
S
24 22 10
-I D
18 16 14
g fs
8 6 4 2 1 2 3 4 5 7 0 0
20
12 10 8 6 4 2 0 0
V
4
8
12
16
20
24
A
30
-VGS
Page 5
-ID
2002-07-26
Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -10.6 A, VGS = -10 V
SPP15P10P
SPP15P10P
10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS
5.2
0.75
4.4 0.6 4 3.6 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 -60 -20 20 60 100 140
C
98%
RDS(on)
0.55 3.2 2.8 2.4
2% typ.
98%
2 1.6 typ 1.2 0.8 0.4 200 0 -60 -20 20 60 100 180
Tj
11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C
10
4
12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj
-10 2
SPP15P10P
pF
A
Ciss
10 3 -10 1
C
Coss
10 2
Crss
IF
-10 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 -10 -1 0
4
8
12
16
20
24
28
V
36
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
-VDS
Page 6
VSD
2002-07-26
Preliminary data 13 Typ. avalanche energy EAS = f (Tj ); par.: ID = -15 A , VDD = -25 V, RGS = 25
250
mJ
SPP15P10P
14 Typ. gate charge VGS = f (QGate ) parameter: ID = -15 A pulsed, Tj = 25C
-16
V
SPP15P10P
200 -12 175 150 125 100 75 -4 50 25 0 25 -2
20%
E AS
VGS
-10 50%
80%
-8
-6
50
75
100
125
C
175
0 0
10
20
30
40
nC
55
Tj
|QG |
15 Drain-source breakdown voltage V(BR)DSS = f (Tj )
SPP15P10P
-120
V
V (BR)DSS
-114 -112 -110 -108 -106 -104 -102 -100 -98 -96 -94 -92 -90 -60 -20 20 60 100 140
C
200
Tj
Page 7
2002-07-26
Preliminary data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved.
SPP15P10P
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 8
2002-07-26


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