 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| S T M4550 S amHop Microelectronics C orp. Apr. 19. 2006 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 55V F E AT UR E S ( m ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON). 50 @ V G S = 10V 70 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ TJ=25 C a -P ulsed Drain-S ource Diode Forward C urrent b Maximum P ower Dissipation b Operating Junction and S torage Temperature R ange S ymbol Vspike VDS VGS ID IDM IS PD TJ, TS TG d Limit 60 55 20 5 20 1.7 2.5 -55 to 150 Unit V V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 R JA 50 C /W S T M4550 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS b Condition VGS = 0V, ID = 250uA VDS = 44V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 5A VGS =4.5V, ID= 3A VDS = 10V, VGS = 10V VDS = 10V, ID = 5A Min Typ C Max Unit 55 1 V uA 100 nA 1 1.8 40 50 20 22 689 92 55 3 70 V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 50 m ohm m ohm A S DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance PF PF PF VDS =20V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 30V ID = 1A VGS = 10V R GE N = 6 ohm VDS =15V, ID = 5A,VGS =10V VDS =15V, ID = 5A,VGS =4.5V VDS =15V, ID = 5A VGS =10V 11 10.9 23 5 13.3 6.2 1.7 2.8 ns ns ns ns nC nC nC nC S T M4550 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.7A Min Typ C Max Unit 0.78 1.2 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max. 25 V G S =10V 20 20 V G S =4.5V V G S =4V 15 ID, Drain C urrent (A) 15 V G S =3.5V ID, Drain C urrent (A) 10 10 V G S =3V 5 125 C 1 25 C 0 0 -55 C 5 0 0 0.5 1 1.5 2 2.5 3 0.7 1.4 2.1 2.8 3.5 4.2 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 90 2.0 R DS (ON), On-R es is tance Normalized 75 1.8 1.6 1.4 1.2 1.0 0 R DS (on) (m ) V G S =10V ID=5A 60 V G S =4.5V 45 V G S =10V 30 15 0 V G S =4.5V ID=3A 0 5 10 15 20 25 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature S T M4550 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 90 20.0 ID=5A 125 C 75 Is , S ource-drain current (A) R DS (on) (m ) 10.0 60 75 C 45 25 C 30 15 0 125 C 25 C 75 C 1.0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M4550 900 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) 750 C is s VDS =15V ID=5A C , C apacitance (pF ) 600 450 300 150 0 C rs s C os s 6 0 5 10 15 20 25 30 V DS , Drain-to S ource Voltage (V ) F igure 9. C apacitance F igure 10. G ate C harge 600 ID, Drain C urrent (A) S witching T ime (ns ) 50 L im 10 (O RD S it 100 60 10 T D (off) N) 10 Tr T D (on) 10 DC ms 0m 1 1s s Tf 1 1 V DS =30V ,ID=1A V G S =10V 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 50 80 6 10 60 100 300 600 R g, G ate R es is tance () V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T M4550 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 13. S witching T es t C ircuit F igure 14. S witching Waveforms 9 r(t),Normalized E ffective T ransient T hermal Impedance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 S quare Wave P uls e Duration (s ec) F igure 15. Normalized T hermal T rans ient Impedance C urve 6 S T M4550 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 A e 0.05 TYP. 0.016 TYP. B A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 7 S T M4550 SO-8 Tape and Reel Data SO-8 Carrier Tape unit: PACKAGE SOP 8N 150 A0 6.40 B0 5.20 K0 2.10 D0 1.5 (MIN) D1 1.5 + 0.1 - 0.0 E 12.0 0.3 E1 1.75 E2 5.5 0.05 P0 8.0 P1 4.0 P2 2.0 0.05 T 0.3 0.05 SO-8 Reel UNIT: TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R V 8 |
Price & Availability of STM4550
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |