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| STZ5.6N Diodes Zener Diode Array STZ5.6N !Applications Constant voltage control For the ESD measure of a signal line !External dimensions (Units : mm) 1.1+0.2 -0.1 2.90.2 1.90.2 0.95 0.95 0.80.1 0.4 +0.1 -0.05 0.15+0.1 -0.06 !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 !Absolute maximum ratings (Ta=25C) Parameter Power dissipation Junction temperature Storage temperature Total of 2 elements Symbol P Tj Tstg Limits 200 150 -55~+150 Unit mW C C !Electrical characteristics (Ta=25C) Parameter Zener voltage Reverse current Operating resistance Rising operating resistance Symbol VZ IR ZZ ZZK Min. 5.31 - - - Typ. - - - - Max. 5.92 1.00 60 200 Unit V A IZ=5mA VR=2.5V IZ=5mA IZ=0.5mA Conditions Capacitance between terminals CT - 12 - pF f=1MHZ, VR=5V 0.3~0.6 Week manufactured 6F !Features 1) Designed for mounting on small surface areas 2) High reliability 3) Composite type with two anode/cathode elements 2.80.2 +0.2 1.6 -0.1 0~0.1 STZ5.6N Diodes !Others Item Standard1 IEC1000-4-2 Charge/discharge capacitance : 200pF10% Charge/discharge capacitance : 150pF Device configuration Discharge resistance : 400 10% Discharge resistance : 330 5 repetitions No spark or smoke emitted : 25kV No element destruction No malfunction : 20kV : 8kV 10 repetitions No malfunction Contact Suspended : 8kV : 15kV Judgment contents !Electrical characteristic curves (Ta=25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 10m 100 POWER DISSIPATION : Pd (mW) 300 ZENER CURRENT : Iz (A) 1m 200 f=1MHz 10 100 100 10 4.0 5.0 6.0 1 5 REVERSE VOLTAGE : VR (V) 10 0 0 25 50 100 150 ZENER VOLTAGE : Vz (V) AMBIENT TEMPERATURE : Ta (C) Fig.1 Zener characteristics Fig.2 Capacitance between terminals characteristic Fig.3 Derating curve |
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