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| STZTA42 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENT IS STZTA92 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 300 300 6 0.1 0.3 2 -65 to 150 150 Unit V V V A A W o o C C 1/4 October 1995 STZTA42 THERMAL DATA R thj-amb * R thj-tab * Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W * Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions V CB = 200 V I C = 100 A 300 Min. Typ. Max. 100 Unit nA V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 1 mA 300 V I E = 100 A 6 V V CE(sat) V BE(sat) h FE I C = 20 mA I C = 20 mA I C = 1 mA I C = 10 mA I C = 30 mA I C = 10 mA I B = 2 mA I B = 2 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 20 V f = 50 MHz 25 40 40 50 50 0.5 0.9 V V fT C CEO Transition Frequency Collector Emitter Capacitance MHz pF V CE = 20 V f = 1 MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 STZTA42 SOT223 MECHANICAL DATA mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8 DIM. L l2 e1 a b f d c e4 C l1 B C E g P008B 3/4 STZTA42 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4 |
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